FILM DEPOSITION APPARATUS
To provide a film deposition apparatus capable of efficiently cooling a component with an electronic part mounted.SOLUTION: A film deposition apparatus includes: a film deposition treatment part 40 that has a chamber 20 to which a sputtering gas G1 is introduced, a sputtering source 4 that is arrang...
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| creator | NISHIGAKI HISASHI |
| description | To provide a film deposition apparatus capable of efficiently cooling a component with an electronic part mounted.SOLUTION: A film deposition apparatus includes: a film deposition treatment part 40 that has a chamber 20 to which a sputtering gas G1 is introduced, a sputtering source 4 that is arranged in the chamber 20 and deposits a film by depositing a film deposition material by sputtering, and deposits a film on an electronic part 100 mounted on a transportation plate 140 from a sputtering source 4 in the chamber 20, and a cooling part 500 for cooling the transportation plate 140 outside the chamber 20. The cooling part 500 has an accommodation part 510 for accommodating the transportation plate 140, a spray part 520 for spraying a liquid into the accommodation part 510, and a vacuum part 530 for evacuating an inside of the accommodation part 510 such that the transportation plate 140 is cooled by an evaporation heat of a liquid sprayed by the spray part 520.SELECTED DRAWING: Figure 11
【課題】電子部品を搭載する部材を効率良く冷却できる成膜装置を提供する。【解決手段】スパッタガスＧ１が導入されるチャンバ２０と、チャンバ２０内に設けられ、スパッタリングにより成膜材料を堆積させて成膜するスパッタ源４を有し、チャンバ２０内において、搬送プレート１４０に搭載された電子部品１００に、スパッタ源４により成膜する成膜処理部４０と、チャンバ２０外において、搬送プレート１４０を冷却する冷却部５００と、を有する。そして、冷却部５００は、搬送プレート１４０を収容する収容部５１０と、収容部５１０内に液体を噴霧する噴霧部５２０と、噴霧部５２０により噴霧された液体の気化熱により搬送プレート１４０が冷却されるように、収容部５１０の内部を減圧する減圧部５３０と、を有する。【選択図】図１１ |
| format | Patent |
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【課題】電子部品を搭載する部材を効率良く冷却できる成膜装置を提供する。【解決手段】スパッタガスＧ１が導入されるチャンバ２０と、チャンバ２０内に設けられ、スパッタリングにより成膜材料を堆積させて成膜するスパッタ源４を有し、チャンバ２０内において、搬送プレート１４０に搭載された電子部品１００に、スパッタ源４により成膜する成膜処理部４０と、チャンバ２０外において、搬送プレート１４０を冷却する冷却部５００と、を有する。そして、冷却部５００は、搬送プレート１４０を収容する収容部５１０と、収容部５１０内に液体を噴霧する噴霧部５２０と、噴霧部５２０により噴霧された液体の気化熱により搬送プレート１４０が冷却されるように、収容部５１０の内部を減圧する減圧部５３０と、を有する。【選択図】図１１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230922&DB=EPODOC&CC=JP&NR=2023133417A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230922&DB=EPODOC&CC=JP&NR=2023133417A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIGAKI HISASHI</creatorcontrib><title>FILM DEPOSITION APPARATUS</title><description>To provide a film deposition apparatus capable of efficiently cooling a component with an electronic part mounted.SOLUTION: A film deposition apparatus includes: a film deposition treatment part 40 that has a chamber 20 to which a sputtering gas G1 is introduced, a sputtering source 4 that is arranged in the chamber 20 and deposits a film by depositing a film deposition material by sputtering, and deposits a film on an electronic part 100 mounted on a transportation plate 140 from a sputtering source 4 in the chamber 20, and a cooling part 500 for cooling the transportation plate 140 outside the chamber 20. The cooling part 500 has an accommodation part 510 for accommodating the transportation plate 140, a spray part 520 for spraying a liquid into the accommodation part 510, and a vacuum part 530 for evacuating an inside of the accommodation part 510 such that the transportation plate 140 is cooled by an evaporation heat of a liquid sprayed by the spray part 520.SELECTED DRAWING: Figure 11
【課題】電子部品を搭載する部材を効率良く冷却できる成膜装置を提供する。【解決手段】スパッタガスＧ１が導入されるチャンバ２０と、チャンバ２０内に設けられ、スパッタリングにより成膜材料を堆積させて成膜するスパッタ源４を有し、チャンバ２０内において、搬送プレート１４０に搭載された電子部品１００に、スパッタ源４により成膜する成膜処理部４０と、チャンバ２０外において、搬送プレート１４０を冷却する冷却部５００と、を有する。そして、冷却部５００は、搬送プレート１４０を収容する収容部５１０と、収容部５１０内に液体を噴霧する噴霧部５２０と、噴霧部５２０により噴霧された液体の気化熱により搬送プレート１４０が冷却されるように、収容部５１０の内部を減圧する減圧部５３０と、を有する。【選択図】図１１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB08_TxVXBxDfAP9gzx9PdTcAwIcAxyDAkN5mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZGxobGxiaG5o7GRCkCAFtDIH8</recordid><startdate>20230922</startdate><enddate>20230922</enddate><creator>NISHIGAKI HISASHI</creator><scope>EVB</scope></search><sort><creationdate>20230922</creationdate><title>FILM DEPOSITION APPARATUS</title><author>NISHIGAKI HISASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023133417A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIGAKI HISASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIGAKI HISASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM DEPOSITION APPARATUS</title><date>2023-09-22</date><risdate>2023</risdate><abstract>To provide a film deposition apparatus capable of efficiently cooling a component with an electronic part mounted.SOLUTION: A film deposition apparatus includes: a film deposition treatment part 40 that has a chamber 20 to which a sputtering gas G1 is introduced, a sputtering source 4 that is arranged in the chamber 20 and deposits a film by depositing a film deposition material by sputtering, and deposits a film on an electronic part 100 mounted on a transportation plate 140 from a sputtering source 4 in the chamber 20, and a cooling part 500 for cooling the transportation plate 140 outside the chamber 20. The cooling part 500 has an accommodation part 510 for accommodating the transportation plate 140, a spray part 520 for spraying a liquid into the accommodation part 510, and a vacuum part 530 for evacuating an inside of the accommodation part 510 such that the transportation plate 140 is cooled by an evaporation heat of a liquid sprayed by the spray part 520.SELECTED DRAWING: Figure 11
【課題】電子部品を搭載する部材を効率良く冷却できる成膜装置を提供する。【解決手段】スパッタガスＧ１が導入されるチャンバ２０と、チャンバ２０内に設けられ、スパッタリングにより成膜材料を堆積させて成膜するスパッタ源４を有し、チャンバ２０内において、搬送プレート１４０に搭載された電子部品１００に、スパッタ源４により成膜する成膜処理部４０と、チャンバ２０外において、搬送プレート１４０を冷却する冷却部５００と、を有する。そして、冷却部５００は、搬送プレート１４０を収容する収容部５１０と、収容部５１０内に液体を噴霧する噴霧部５２０と、噴霧部５２０により噴霧された液体の気化熱により搬送プレート１４０が冷却されるように、収容部５１０の内部を減圧する減圧部５３０と、を有する。【選択図】図１１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM DEPOSITION APPARATUS |
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