HIGH FREQUENCY PLASMA GENERATION DEVICE
To provide a plasma generation device capable of solving a problem in which attempts are being made to increase the frequency of the power supply and increase the size of the board in order to respond to higher quality, larger screens, lower costs, etc. of liquid crystal displays and organic EL disp...
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| creator | MURATA MASAYOSHI |
| description | To provide a plasma generation device capable of solving a problem in which attempts are being made to increase the frequency of the power supply and increase the size of the board in order to respond to higher quality, larger screens, lower costs, etc. of liquid crystal displays and organic EL displays, but there is plasma non-uniformity caused by standing waves specific to electromagnetic waves in the field of high frequency plasma generation devices.SOLUTION: A first power supplied from a power feeding point provided at the center of each of the four sides of the surface of a rectangular non-grounded electrode that does not face the grounded electrode, and second, third, fourth, and fifth powers supplied from each of the power supply points provided at the four corners of the surface that does not face the grounded electrode are switched over time and supplied, and a zero-order Bessel function type plasma generated by the first electric power is superimposed with a cosine wave type plasma generated by the second, third, fourth, and fifth electric powers.SELECTED DRAWING: Figure 2
【課題】高周波プラズマ発生装置の分野では、液晶デイスプレイや有機ＥＬデイスプレイ等の高品質化・大画面化・低コスト化等への対応のため、電源の高周波数化及び基板サズの更なる大型化が試みられているが、依然として、電磁波特有の定在波に起因するプラズマの不均一化という問題を抱えている。この問題を解決可能なプラズマ発生装置を提供すること。【解決手段】矩形型非接地電極の前記接地電極に対向しない面の４つ辺の辺中央部にそれぞれに設けた給電点から供給される第１の電力と、前記接地電極に対向しない面の４つの角部に設けた各給電点から供給される第２、第３、第４及び第５の電力を時間的に切り替えて供給し、前記第１の電力が生成するゼロ次のベッセル関数型のプラズマと、前記第２、第３、第４、及び第５の電力が生成する余弦波型のプラズマを重畳させることを特徴とする。【選択図】図２ |
| format | Patent |
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【課題】高周波プラズマ発生装置の分野では、液晶デイスプレイや有機ＥＬデイスプレイ等の高品質化・大画面化・低コスト化等への対応のため、電源の高周波数化及び基板サズの更なる大型化が試みられているが、依然として、電磁波特有の定在波に起因するプラズマの不均一化という問題を抱えている。この問題を解決可能なプラズマ発生装置を提供すること。【解決手段】矩形型非接地電極の前記接地電極に対向しない面の４つ辺の辺中央部にそれぞれに設けた給電点から供給される第１の電力と、前記接地電極に対向しない面の４つの角部に設けた各給電点から供給される第２、第３、第４及び第５の電力を時間的に切り替えて供給し、前記第１の電力が生成するゼロ次のベッセル関数型のプラズマと、前記第２、第３、第４、及び第５の電力が生成する余弦波型のプラズマを重畳させることを特徴とする。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230914&DB=EPODOC&CC=JP&NR=2023129476A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230914&DB=EPODOC&CC=JP&NR=2023129476A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MURATA MASAYOSHI</creatorcontrib><title>HIGH FREQUENCY PLASMA GENERATION DEVICE</title><description>To provide a plasma generation device capable of solving a problem in which attempts are being made to increase the frequency of the power supply and increase the size of the board in order to respond to higher quality, larger screens, lower costs, etc. of liquid crystal displays and organic EL displays, but there is plasma non-uniformity caused by standing waves specific to electromagnetic waves in the field of high frequency plasma generation devices.SOLUTION: A first power supplied from a power feeding point provided at the center of each of the four sides of the surface of a rectangular non-grounded electrode that does not face the grounded electrode, and second, third, fourth, and fifth powers supplied from each of the power supply points provided at the four corners of the surface that does not face the grounded electrode are switched over time and supplied, and a zero-order Bessel function type plasma generated by the first electric power is superimposed with a cosine wave type plasma generated by the second, third, fourth, and fifth electric powers.SELECTED DRAWING: Figure 2
【課題】高周波プラズマ発生装置の分野では、液晶デイスプレイや有機ＥＬデイスプレイ等の高品質化・大画面化・低コスト化等への対応のため、電源の高周波数化及び基板サズの更なる大型化が試みられているが、依然として、電磁波特有の定在波に起因するプラズマの不均一化という問題を抱えている。この問題を解決可能なプラズマ発生装置を提供すること。【解決手段】矩形型非接地電極の前記接地電極に対向しない面の４つ辺の辺中央部にそれぞれに設けた給電点から供給される第１の電力と、前記接地電極に対向しない面の４つの角部に設けた各給電点から供給される第２、第３、第４及び第５の電力を時間的に切り替えて供給し、前記第１の電力が生成するゼロ次のベッセル関数型のプラズマと、前記第２、第３、第４、及び第５の電力が生成する余弦波型のプラズマを重畳させることを特徴とする。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD38HT3UHALcg0MdfVzjlQI8HEM9nVUcHf1cw1yDPH091NwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkbGhkaWJuZmjsZEKQIAI7IkNg</recordid><startdate>20230914</startdate><enddate>20230914</enddate><creator>MURATA MASAYOSHI</creator><scope>EVB</scope></search><sort><creationdate>20230914</creationdate><title>HIGH FREQUENCY PLASMA GENERATION DEVICE</title><author>MURATA MASAYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023129476A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MURATA MASAYOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MURATA MASAYOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH FREQUENCY PLASMA GENERATION DEVICE</title><date>2023-09-14</date><risdate>2023</risdate><abstract>To provide a plasma generation device capable of solving a problem in which attempts are being made to increase the frequency of the power supply and increase the size of the board in order to respond to higher quality, larger screens, lower costs, etc. of liquid crystal displays and organic EL displays, but there is plasma non-uniformity caused by standing waves specific to electromagnetic waves in the field of high frequency plasma generation devices.SOLUTION: A first power supplied from a power feeding point provided at the center of each of the four sides of the surface of a rectangular non-grounded electrode that does not face the grounded electrode, and second, third, fourth, and fifth powers supplied from each of the power supply points provided at the four corners of the surface that does not face the grounded electrode are switched over time and supplied, and a zero-order Bessel function type plasma generated by the first electric power is superimposed with a cosine wave type plasma generated by the second, third, fourth, and fifth electric powers.SELECTED DRAWING: Figure 2
【課題】高周波プラズマ発生装置の分野では、液晶デイスプレイや有機ＥＬデイスプレイ等の高品質化・大画面化・低コスト化等への対応のため、電源の高周波数化及び基板サズの更なる大型化が試みられているが、依然として、電磁波特有の定在波に起因するプラズマの不均一化という問題を抱えている。この問題を解決可能なプラズマ発生装置を提供すること。【解決手段】矩形型非接地電極の前記接地電極に対向しない面の４つ辺の辺中央部にそれぞれに設けた給電点から供給される第１の電力と、前記接地電極に対向しない面の４つの角部に設けた各給電点から供給される第２、第３、第４及び第５の電力を時間的に切り替えて供給し、前記第１の電力が生成するゼロ次のベッセル関数型のプラズマと、前記第２、第３、第４、及び第５の電力が生成する余弦波型のプラズマを重畳させることを特徴とする。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | HIGH FREQUENCY PLASMA GENERATION DEVICE |
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