METHOD FOR MEASURING PHOTOMASKS
To provide a method for measuring a photomask for semiconductor lithography.SOLUTION: The method includes: recording an aerial image of at least one region of the photomask; defining at least one region of interest (1); ascertaining structure edges (3) in the at least one region of interest (1); pro...
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| creator | UTE BUTTGEREIT THOMAS THALER DIRK BEYER DMITRY SIMAKOV STEFFEN STEINERT |
| description | To provide a method for measuring a photomask for semiconductor lithography.SOLUTION: The method includes: recording an aerial image of at least one region of the photomask; defining at least one region of interest (1); ascertaining structure edges (3) in the at least one region of interest (1); providing desired structures (4) to be produced by the photomask; adapting the ascertained structure edges (3) to the desired structures (4); and displacing the adapted structure edges by means of results of a separate registration measurement.SELECTED DRAWING: Figure 7
【課題】半導体リソグラフィ用のフォトマスクを測定するための方法を提供すること。【解決手段】方法は、フォトマスクの少なくとも１つの領域の空間像を記録するステップと、少なくとも１つの関心領域（１）を定義するステップと、少なくとも１つの関心領域（１）内の構造体端部（３）を確認するステップと、フォトマスクによって作り出されることになる所望の構造体（４）を提供するステップと、確認された構造体端部（３）を所望の構造体（４）に適合させるステップと、別個の位置合わせ測定の結果を用いて、適合された構造体端部を変位させるステップとを含む。【選択図】図７ |
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【課題】半導体リソグラフィ用のフォトマスクを測定するための方法を提供すること。【解決手段】方法は、フォトマスクの少なくとも１つの領域の空間像を記録するステップと、少なくとも１つの関心領域（１）を定義するステップと、少なくとも１つの関心領域（１）内の構造体端部（３）を確認するステップと、フォトマスクによって作り出されることになる所望の構造体（４）を提供するステップと、確認された構造体端部（３）を所望の構造体（４）に適合させるステップと、別個の位置合わせ測定の結果を用いて、適合された構造体端部を変位させるステップとを含む。【選択図】図７</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230914&DB=EPODOC&CC=JP&NR=2023129405A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230914&DB=EPODOC&CC=JP&NR=2023129405A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UTE BUTTGEREIT</creatorcontrib><creatorcontrib>THOMAS THALER</creatorcontrib><creatorcontrib>DIRK BEYER</creatorcontrib><creatorcontrib>DMITRY SIMAKOV</creatorcontrib><creatorcontrib>STEFFEN STEINERT</creatorcontrib><title>METHOD FOR MEASURING PHOTOMASKS</title><description>To provide a method for measuring a photomask for semiconductor lithography.SOLUTION: The method includes: recording an aerial image of at least one region of the photomask; defining at least one region of interest (1); ascertaining structure edges (3) in the at least one region of interest (1); providing desired structures (4) to be produced by the photomask; adapting the ascertained structure edges (3) to the desired structures (4); and displacing the adapted structure edges by means of results of a separate registration measurement.SELECTED DRAWING: Figure 7
【課題】半導体リソグラフィ用のフォトマスクを測定するための方法を提供すること。【解決手段】方法は、フォトマスクの少なくとも１つの領域の空間像を記録するステップと、少なくとも１つの関心領域（１）を定義するステップと、少なくとも１つの関心領域（１）内の構造体端部（３）を確認するステップと、フォトマスクによって作り出されることになる所望の構造体（４）を提供するステップと、確認された構造体端部（３）を所望の構造体（４）に適合させるステップと、別個の位置合わせ測定の結果を用いて、適合された構造体端部を変位させるステップとを含む。【選択図】図７</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD3dQ3x8HdRcPMPUvB1dQwODfL0c1cI8PAP8fd1DPYO5mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZGxoZGliYGpo7GRCkCACJmIi4</recordid><startdate>20230914</startdate><enddate>20230914</enddate><creator>UTE BUTTGEREIT</creator><creator>THOMAS THALER</creator><creator>DIRK BEYER</creator><creator>DMITRY SIMAKOV</creator><creator>STEFFEN STEINERT</creator><scope>EVB</scope></search><sort><creationdate>20230914</creationdate><title>METHOD FOR MEASURING PHOTOMASKS</title><author>UTE BUTTGEREIT ; THOMAS THALER ; DIRK BEYER ; DMITRY SIMAKOV ; STEFFEN STEINERT</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023129405A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>UTE BUTTGEREIT</creatorcontrib><creatorcontrib>THOMAS THALER</creatorcontrib><creatorcontrib>DIRK BEYER</creatorcontrib><creatorcontrib>DMITRY SIMAKOV</creatorcontrib><creatorcontrib>STEFFEN STEINERT</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UTE BUTTGEREIT</au><au>THOMAS THALER</au><au>DIRK BEYER</au><au>DMITRY SIMAKOV</au><au>STEFFEN STEINERT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MEASURING PHOTOMASKS</title><date>2023-09-14</date><risdate>2023</risdate><abstract>To provide a method for measuring a photomask for semiconductor lithography.SOLUTION: The method includes: recording an aerial image of at least one region of the photomask; defining at least one region of interest (1); ascertaining structure edges (3) in the at least one region of interest (1); providing desired structures (4) to be produced by the photomask; adapting the ascertained structure edges (3) to the desired structures (4); and displacing the adapted structure edges by means of results of a separate registration measurement.SELECTED DRAWING: Figure 7
【課題】半導体リソグラフィ用のフォトマスクを測定するための方法を提供すること。【解決手段】方法は、フォトマスクの少なくとも１つの領域の空間像を記録するステップと、少なくとも１つの関心領域（１）を定義するステップと、少なくとも１つの関心領域（１）内の構造体端部（３）を確認するステップと、フォトマスクによって作り出されることになる所望の構造体（４）を提供するステップと、確認された構造体端部（３）を所望の構造体（４）に適合させるステップと、別個の位置合わせ測定の結果を用いて、適合された構造体端部を変位させるステップとを含む。【選択図】図７</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | METHOD FOR MEASURING PHOTOMASKS |
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