MANUFACTURING METHOD OF EPITAXIAL WAFER AND EPITAXIAL WAFER MANUFACTURING DEVICE
To suppress distortion of a wafer in manufacturing an epitaxial wafer through a multi-wafer deposition process.SOLUTION: The present invention relates to a manufacturing method of an epitaxial wafer including cleaning the inside of a chamber 11 after executing a plurality of times an epitaxial wafer...
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| creator | NARAHARA KAZUHIRO TSUJI MASAYUKI |
| description | To suppress distortion of a wafer in manufacturing an epitaxial wafer through a multi-wafer deposition process.SOLUTION: The present invention relates to a manufacturing method of an epitaxial wafer including cleaning the inside of a chamber 11 after executing a plurality of times an epitaxial wafer manufacturing process of: carrying a wafer W into the chamber 11 of an epitaxial wafer manufacturing device 1; growing an epitaxial film on the wafer W and defining it as an epitaxial wafer; and carrying the epitaxial wafer out of the chamber 11. In the manufacturing method of the epitaxial wafer, the wafer W supported by a susceptor 12 is heated by first heating devices 24 and 25 during the growth of the epitaxial film, and an outer edge of the susceptor 12 is heated by a second heating device 27.SELECTED DRAWING: Figure 1
【課題】マルチウェーハデポジションプロセスによるエピタキシャルウェーハの製造において、ウェーハの歪みを抑制する。【解決手段】エピタキシャルウェーハ製造装置１のチャンバ１１内にウェーハＷを搬入し、ウェーハＷ上にエピタキシャル膜を成長させてエピタキシャルウェーハとし、チャンバ１１外にエピタキシャルウェーハを搬出するエピタキシャルウェーハ製造工程を複数回実行した後に、チャンバ１１内をクリーニングするエピタキシャルウェーハの製造方法であって、エピタキシャル膜の成長中に、第一加熱装置２４，２５によりサセプター１２に支持されたウェーハＷを加熱するとともに、サセプター１２の外縁部を第二加熱装置２７により加熱するエピタキシャルウェーハの製造方法を提供する。【選択図】図１ |
| format | Patent |
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【課題】マルチウェーハデポジションプロセスによるエピタキシャルウェーハの製造において、ウェーハの歪みを抑制する。【解決手段】エピタキシャルウェーハ製造装置１のチャンバ１１内にウェーハＷを搬入し、ウェーハＷ上にエピタキシャル膜を成長させてエピタキシャルウェーハとし、チャンバ１１外にエピタキシャルウェーハを搬出するエピタキシャルウェーハ製造工程を複数回実行した後に、チャンバ１１内をクリーニングするエピタキシャルウェーハの製造方法であって、エピタキシャル膜の成長中に、第一加熱装置２４，２５によりサセプター１２に支持されたウェーハＷを加熱するとともに、サセプター１２の外縁部を第二加熱装置２７により加熱するエピタキシャルウェーハの製造方法を提供する。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230707&DB=EPODOC&CC=JP&NR=2023097005A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230707&DB=EPODOC&CC=JP&NR=2023097005A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NARAHARA KAZUHIRO</creatorcontrib><creatorcontrib>TSUJI MASAYUKI</creatorcontrib><title>MANUFACTURING METHOD OF EPITAXIAL WAFER AND EPITAXIAL WAFER MANUFACTURING DEVICE</title><description>To suppress distortion of a wafer in manufacturing an epitaxial wafer through a multi-wafer deposition process.SOLUTION: The present invention relates to a manufacturing method of an epitaxial wafer including cleaning the inside of a chamber 11 after executing a plurality of times an epitaxial wafer manufacturing process of: carrying a wafer W into the chamber 11 of an epitaxial wafer manufacturing device 1; growing an epitaxial film on the wafer W and defining it as an epitaxial wafer; and carrying the epitaxial wafer out of the chamber 11. In the manufacturing method of the epitaxial wafer, the wafer W supported by a susceptor 12 is heated by first heating devices 24 and 25 during the growth of the epitaxial film, and an outer edge of the susceptor 12 is heated by a second heating device 27.SELECTED DRAWING: Figure 1
【課題】マルチウェーハデポジションプロセスによるエピタキシャルウェーハの製造において、ウェーハの歪みを抑制する。【解決手段】エピタキシャルウェーハ製造装置１のチャンバ１１内にウェーハＷを搬入し、ウェーハＷ上にエピタキシャル膜を成長させてエピタキシャルウェーハとし、チャンバ１１外にエピタキシャルウェーハを搬出するエピタキシャルウェーハ製造工程を複数回実行した後に、チャンバ１１内をクリーニングするエピタキシャルウェーハの製造方法であって、エピタキシャル膜の成長中に、第一加熱装置２４，２５によりサセプター１２に支持されたウェーハＷを加熱するとともに、サセプター１２の外縁部を第二加熱装置２７により加熱するエピタキシャルウェーハの製造方法を提供する。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjwdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1NwDfAMcYzwdPRRCHd0cw1ScPRzwRBD1eviGubp7MrDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMjIwNLM0NDEwdjYlSBADP4C9w</recordid><startdate>20230707</startdate><enddate>20230707</enddate><creator>NARAHARA KAZUHIRO</creator><creator>TSUJI MASAYUKI</creator><scope>EVB</scope></search><sort><creationdate>20230707</creationdate><title>MANUFACTURING METHOD OF EPITAXIAL WAFER AND EPITAXIAL WAFER MANUFACTURING DEVICE</title><author>NARAHARA KAZUHIRO ; TSUJI MASAYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023097005A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NARAHARA KAZUHIRO</creatorcontrib><creatorcontrib>TSUJI MASAYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NARAHARA KAZUHIRO</au><au>TSUJI MASAYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF EPITAXIAL WAFER AND EPITAXIAL WAFER MANUFACTURING DEVICE</title><date>2023-07-07</date><risdate>2023</risdate><abstract>To suppress distortion of a wafer in manufacturing an epitaxial wafer through a multi-wafer deposition process.SOLUTION: The present invention relates to a manufacturing method of an epitaxial wafer including cleaning the inside of a chamber 11 after executing a plurality of times an epitaxial wafer manufacturing process of: carrying a wafer W into the chamber 11 of an epitaxial wafer manufacturing device 1; growing an epitaxial film on the wafer W and defining it as an epitaxial wafer; and carrying the epitaxial wafer out of the chamber 11. In the manufacturing method of the epitaxial wafer, the wafer W supported by a susceptor 12 is heated by first heating devices 24 and 25 during the growth of the epitaxial film, and an outer edge of the susceptor 12 is heated by a second heating device 27.SELECTED DRAWING: Figure 1
【課題】マルチウェーハデポジションプロセスによるエピタキシャルウェーハの製造において、ウェーハの歪みを抑制する。【解決手段】エピタキシャルウェーハ製造装置１のチャンバ１１内にウェーハＷを搬入し、ウェーハＷ上にエピタキシャル膜を成長させてエピタキシャルウェーハとし、チャンバ１１外にエピタキシャルウェーハを搬出するエピタキシャルウェーハ製造工程を複数回実行した後に、チャンバ１１内をクリーニングするエピタキシャルウェーハの製造方法であって、エピタキシャル膜の成長中に、第一加熱装置２４，２５によりサセプター１２に支持されたウェーハＷを加熱するとともに、サセプター１２の外縁部を第二加熱装置２７により加熱するエピタキシャルウェーハの製造方法を提供する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | MANUFACTURING METHOD OF EPITAXIAL WAFER AND EPITAXIAL WAFER MANUFACTURING DEVICE |
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