ETCHING METHOD, MANUFACTURING METHOD OF ELECTRONIC COMPONENT, PLASMA DEVICE AND USING METHOD OF PLASMA DEVICE
To achieve increase in an etching quantity of ruthenium and increase in a selection ratio of ruthenium to a photoresist in a ruthenium-etching technique to pattern ruthenium of a thick film with high precision.SOLUTION: An etching method is arranged to etch metal by use of a mixture gas that include...
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| creator | MIKAMI SHUNICHI |
| description | To achieve increase in an etching quantity of ruthenium and increase in a selection ratio of ruthenium to a photoresist in a ruthenium-etching technique to pattern ruthenium of a thick film with high precision.SOLUTION: An etching method is arranged to etch metal by use of a mixture gas that includes an oxygen gas serving as a base gas, and an additive gas containing a chlorine-based gas and a fluoromethane-based gas, in which concentration of the additive gas is 5-10% in the total gas.SELECTED DRAWING: Figure 5
【課題】ルテニウムのエッチング技術ついて、ルテニウムのエッチング量の増大と、ルテニウムとフォトレジストとの選択比の増大とを達成し、厚膜のルテニウムを高精度でパターニングすることができること。【解決手段】ベースガスである酸素ガスと、塩素系ガス及びフルオロメタン系ガスからなる追加ガスとを含み、当該追加ガス濃度が全ガス中の５～１０％である混合ガスを用いて金属をエッチングするエッチング方法とした。【選択図】図５ |
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【課題】ルテニウムのエッチング技術ついて、ルテニウムのエッチング量の増大と、ルテニウムとフォトレジストとの選択比の増大とを達成し、厚膜のルテニウムを高精度でパターニングすることができること。【解決手段】ベースガスである酸素ガスと、塩素系ガス及びフルオロメタン系ガスからなる追加ガスとを含み、当該追加ガス濃度が全ガス中の５～１０％である混合ガスを用いて金属をエッチングするエッチング方法とした。【選択図】図５</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230627&DB=EPODOC&CC=JP&NR=2023088631A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230627&DB=EPODOC&CC=JP&NR=2023088631A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIKAMI SHUNICHI</creatorcontrib><title>ETCHING METHOD, MANUFACTURING METHOD OF ELECTRONIC COMPONENT, PLASMA DEVICE AND USING METHOD OF PLASMA DEVICE</title><description>To achieve increase in an etching quantity of ruthenium and increase in a selection ratio of ruthenium to a photoresist in a ruthenium-etching technique to pattern ruthenium of a thick film with high precision.SOLUTION: An etching method is arranged to etch metal by use of a mixture gas that includes an oxygen gas serving as a base gas, and an additive gas containing a chlorine-based gas and a fluoromethane-based gas, in which concentration of the additive gas is 5-10% in the total gas.SELECTED DRAWING: Figure 5
【課題】ルテニウムのエッチング技術ついて、ルテニウムのエッチング量の増大と、ルテニウムとフォトレジストとの選択比の増大とを達成し、厚膜のルテニウムを高精度でパターニングすることができること。【解決手段】ベースガスである酸素ガスと、塩素系ガス及びフルオロメタン系ガスからなる追加ガスとを含み、当該追加ガス濃度が全ガス中の５～１０％である混合ガスを用いて金属をエッチングするエッチング方法とした。【選択図】図５</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMh1DXH28PRzV_B1DfHwd9FR8HX0C3VzdA4JDUKIKvi7Kbj6uDqHBPn7eTorOPv7Bvj7ufqF6CgE-DgG-zoquLiGeTq7Kjj6uSiEBqPqQ1HBw8CalphTnMoLpbkZlNxADtBNLciPTy0uSExOzUstifcKMDIwMjawsDAzNnQ0JkoRAGQYNvU</recordid><startdate>20230627</startdate><enddate>20230627</enddate><creator>MIKAMI SHUNICHI</creator><scope>EVB</scope></search><sort><creationdate>20230627</creationdate><title>ETCHING METHOD, MANUFACTURING METHOD OF ELECTRONIC COMPONENT, PLASMA DEVICE AND USING METHOD OF PLASMA DEVICE</title><author>MIKAMI SHUNICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023088631A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIKAMI SHUNICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIKAMI SHUNICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING METHOD, MANUFACTURING METHOD OF ELECTRONIC COMPONENT, PLASMA DEVICE AND USING METHOD OF PLASMA DEVICE</title><date>2023-06-27</date><risdate>2023</risdate><abstract>To achieve increase in an etching quantity of ruthenium and increase in a selection ratio of ruthenium to a photoresist in a ruthenium-etching technique to pattern ruthenium of a thick film with high precision.SOLUTION: An etching method is arranged to etch metal by use of a mixture gas that includes an oxygen gas serving as a base gas, and an additive gas containing a chlorine-based gas and a fluoromethane-based gas, in which concentration of the additive gas is 5-10% in the total gas.SELECTED DRAWING: Figure 5
【課題】ルテニウムのエッチング技術ついて、ルテニウムのエッチング量の増大と、ルテニウムとフォトレジストとの選択比の増大とを達成し、厚膜のルテニウムを高精度でパターニングすることができること。【解決手段】ベースガスである酸素ガスと、塩素系ガス及びフルオロメタン系ガスからなる追加ガスとを含み、当該追加ガス濃度が全ガス中の５～１０％である混合ガスを用いて金属をエッチングするエッチング方法とした。【選択図】図５</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ETCHING METHOD, MANUFACTURING METHOD OF ELECTRONIC COMPONENT, PLASMA DEVICE AND USING METHOD OF PLASMA DEVICE |
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