SEMICONDUCTOR DEVICE

To obtain a semiconductor device with a high yield that can be easily manufactured.SOLUTION: A first main electrode 10 and a first control electrode pad 15 are formed on a first principal surface of a semiconductor chip 1. A second main electrode 29 and a second control electrode pad 31 are formed on a second principal surface of the semiconductor chip 1. The second main electrode 29 and the second control electrode pad 31 are bonded with first and second metal patterns 39 and 40 of an insulation substrate 36, respectively. Bonding parts of first and second wires 42 and 43 are overlapped with a junction of the second main electrode 29 or the second control electrode pad 31, in a plan view. A thickness of the first and second metal patterns 39 and 40 is equal to or less than 0.2 mm.SELECTED DRAWING: Figure 2 【課題】歩留まりが高く製造が容易な半導体装置を得る。【解決手段】半導体チップ１の第１の主面に第１の主電極１０と第１の制御電極パッド１５が形成されている。半導体チップ１の第２の主面に第２の主電極２９と第２の制御電極パッド３１が形成されている。第２の主電極２９と第２の制御電極パッド３１がそれぞれ絶縁基板３６の第１及び第２の金属パターン３９，４０に接合されている。第１及び第２のワイヤ４２，４３のボンディング部は、平面視で第２の主電極２９又は第２の制御電極パッド３１の接合部に重なっている。第１及び第２の金属パターン３９，４０の厚みは０．２ｍｍ以下である。【選択図】図２