SEMICONDUCTOR SUBSTRATE
To provide a semiconductor substrate and a transistor.SOLUTION: A semiconductor substrate includes a base material, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer, and a nucleation layer. The insulating layer is arranged on the base material. The semiconductor laye...
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| creator | LIU HSUEH-HSING |
| description | To provide a semiconductor substrate and a transistor.SOLUTION: A semiconductor substrate includes a base material, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer, and a nucleation layer. The insulating layer is arranged on the base material. The semiconductor layer is arranged on the insulating layer. The wide bandgap diffusion buffer layer is arranged on the semiconductor layer. A bandgap of the wide bandgap diffusion buffer layer is higher than 2.5 eV. The nucleation layer is arranged on the wide bandgap diffusion buffer layer. The nucleation layer includes an aluminum-containing layer.SELECTED DRAWING: Figure 1B
【課題】半導体基板およびトランジスタを提供する。【解決手段】半導体基板は、基材と、絶縁層と、半導体層と、ワイドバンドギャップ拡散バッファ層と、核形成層とを含む。絶縁層は、基材上に配置される。半導体層は、絶縁層上に配置される。ワイドバンドギャップ拡散バッファ層は、半導体層上に配置されており、ワイドバンドギャップ拡散バッファ層のバンドギャップは、２．５ｅＶよりも高い。核形成層は、ワイドバンドギャップ拡散バッファ層上に配置され、核形成層は、アルミニウム含有層を含む。【選択図】図１Ｂ |
| format | Patent |
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【課題】半導体基板およびトランジスタを提供する。【解決手段】半導体基板は、基材と、絶縁層と、半導体層と、ワイドバンドギャップ拡散バッファ層と、核形成層とを含む。絶縁層は、基材上に配置される。半導体層は、絶縁層上に配置される。ワイドバンドギャップ拡散バッファ層は、半導体層上に配置されており、ワイドバンドギャップ拡散バッファ層のバンドギャップは、２．５ｅＶよりも高い。核形成層は、ワイドバンドギャップ拡散バッファ層上に配置され、核形成層は、アルミニウム含有層を含む。【選択図】図１Ｂ</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230512&DB=EPODOC&CC=JP&NR=2023065284A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230512&DB=EPODOC&CC=JP&NR=2023065284A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU HSUEH-HSING</creatorcontrib><title>SEMICONDUCTOR SUBSTRATE</title><description>To provide a semiconductor substrate and a transistor.SOLUTION: A semiconductor substrate includes a base material, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer, and a nucleation layer. The insulating layer is arranged on the base material. The semiconductor layer is arranged on the insulating layer. The wide bandgap diffusion buffer layer is arranged on the semiconductor layer. A bandgap of the wide bandgap diffusion buffer layer is higher than 2.5 eV. The nucleation layer is arranged on the wide bandgap diffusion buffer layer. The nucleation layer includes an aluminum-containing layer.SELECTED DRAWING: Figure 1B
【課題】半導体基板およびトランジスタを提供する。【解決手段】半導体基板は、基材と、絶縁層と、半導体層と、ワイドバンドギャップ拡散バッファ層と、核形成層とを含む。絶縁層は、基材上に配置される。半導体層は、絶縁層上に配置される。ワイドバンドギャップ拡散バッファ層は、半導体層上に配置されており、ワイドバンドギャップ拡散バッファ層のバンドギャップは、２．５ｅＶよりも高い。核形成層は、ワイドバンドギャップ拡散バッファ層上に配置され、核形成層は、アルミニウム含有層を含む。【選択図】図１Ｂ</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAPdvX1dPb3cwl1DvEPUggOdQoOCXIMceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRsYGZqZGFiaOxkQpAgAxtiAu</recordid><startdate>20230512</startdate><enddate>20230512</enddate><creator>LIU HSUEH-HSING</creator><scope>EVB</scope></search><sort><creationdate>20230512</creationdate><title>SEMICONDUCTOR SUBSTRATE</title><author>LIU HSUEH-HSING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023065284A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU HSUEH-HSING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU HSUEH-HSING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR SUBSTRATE</title><date>2023-05-12</date><risdate>2023</risdate><abstract>To provide a semiconductor substrate and a transistor.SOLUTION: A semiconductor substrate includes a base material, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer, and a nucleation layer. The insulating layer is arranged on the base material. The semiconductor layer is arranged on the insulating layer. The wide bandgap diffusion buffer layer is arranged on the semiconductor layer. A bandgap of the wide bandgap diffusion buffer layer is higher than 2.5 eV. The nucleation layer is arranged on the wide bandgap diffusion buffer layer. The nucleation layer includes an aluminum-containing layer.SELECTED DRAWING: Figure 1B
【課題】半導体基板およびトランジスタを提供する。【解決手段】半導体基板は、基材と、絶縁層と、半導体層と、ワイドバンドギャップ拡散バッファ層と、核形成層とを含む。絶縁層は、基材上に配置される。半導体層は、絶縁層上に配置される。ワイドバンドギャップ拡散バッファ層は、半導体層上に配置されており、ワイドバンドギャップ拡散バッファ層のバンドギャップは、２．５ｅＶよりも高い。核形成層は、ワイドバンドギャップ拡散バッファ層上に配置され、核形成層は、アルミニウム含有層を含む。【選択図】図１Ｂ</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR SUBSTRATE |
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