APPARATUS FOR PERFORMING SUBSTRATE PROCESSING, GAS SHOWER HEAD, AND METHOD FOR PERFORMING SUBSTRATE PROCESSING
To provide a technique for accurately and speedily measuring pressure in a gas shower head.SOLUTION: In an apparatus that supplies processing gas to a substrate to process the substrate, the substrate is mounted on a mount table provided in a processing vessel, and a gas shower head provided opposit...
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| creator | AKIMOTO TOSHIKAZU MAEHARA DAIKI UMESHITA NAOMI UEDA HIROICHI |
| description | To provide a technique for accurately and speedily measuring pressure in a gas shower head.SOLUTION: In an apparatus that supplies processing gas to a substrate to process the substrate, the substrate is mounted on a mount table provided in a processing vessel, and a gas shower head provided opposite the mount table supplies the processing gas diffused in a gas diffusion space therein into the processing vessel through a plurality of gas supply holes formed in a shower plate. A gas supply part for supplying the processing gas into the gas diffusion space comprises a flow rate control part for the processing gas, and a pressure sensor part is provided in the gas diffusion space and outputs a pressure signal corresponding to a pressure measured value in the gas diffusion space. Then, a control part outputs a control signal for controlling the flow rate of the processing gas to the flow rate control part based upon the pressure measured value acquired from the pressure sensor part through the pressure signal.SELECTED DRAWING: Figure 2
【課題】ガスシャワーヘッド内の圧力を正確、且つ迅速に測定する技術を提供する。【解決手段】基板に処理ガスを供給して基板処理を行う装置において、基板は前記処理容器内に設けられた載置台に載置され、載置台に対向する位置に設けられたガスシャワーヘッドは、その内部のガス拡散空間内に拡散した前記処理ガスを、シャワープレートに形成された複数のガス供給孔を介して処理容器内へ供給する。前記ガス拡散空間に前記処理ガスを供給するためのガス供給部は、処理ガスの流量調節部を備え、圧力センサー部は、前記ガス拡散空間内に設けられ、当該ガス拡散空間内の圧力測定値に対応する圧力信号を出力する。そして制御部は、前記圧力信号を介して前記圧力センサー部より取得した前記圧力測定値に基づき、前記流量調節部に対し、前記処理ガスの流量を調節するための制御信号を出力する。【選択図】図２ |
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【課題】ガスシャワーヘッド内の圧力を正確、且つ迅速に測定する技術を提供する。【解決手段】基板に処理ガスを供給して基板処理を行う装置において、基板は前記処理容器内に設けられた載置台に載置され、載置台に対向する位置に設けられたガスシャワーヘッドは、その内部のガス拡散空間内に拡散した前記処理ガスを、シャワープレートに形成された複数のガス供給孔を介して処理容器内へ供給する。前記ガス拡散空間に前記処理ガスを供給するためのガス供給部は、処理ガスの流量調節部を備え、圧力センサー部は、前記ガス拡散空間内に設けられ、当該ガス拡散空間内の圧力測定値に対応する圧力信号を出力する。そして制御部は、前記圧力信号を介して前記圧力センサー部より取得した前記圧力測定値に基づき、前記流量調節部に対し、前記処理ガスの流量を調節するための制御信号を出力する。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230407&DB=EPODOC&CC=JP&NR=2023048726A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230407&DB=EPODOC&CC=JP&NR=2023048726A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AKIMOTO TOSHIKAZU</creatorcontrib><creatorcontrib>MAEHARA DAIKI</creatorcontrib><creatorcontrib>UMESHITA NAOMI</creatorcontrib><creatorcontrib>UEDA HIROICHI</creatorcontrib><title>APPARATUS FOR PERFORMING SUBSTRATE PROCESSING, GAS SHOWER HEAD, AND METHOD FOR PERFORMING SUBSTRATE PROCESSING</title><description>To provide a technique for accurately and speedily measuring pressure in a gas shower head.SOLUTION: In an apparatus that supplies processing gas to a substrate to process the substrate, the substrate is mounted on a mount table provided in a processing vessel, and a gas shower head provided opposite the mount table supplies the processing gas diffused in a gas diffusion space therein into the processing vessel through a plurality of gas supply holes formed in a shower plate. A gas supply part for supplying the processing gas into the gas diffusion space comprises a flow rate control part for the processing gas, and a pressure sensor part is provided in the gas diffusion space and outputs a pressure signal corresponding to a pressure measured value in the gas diffusion space. Then, a control part outputs a control signal for controlling the flow rate of the processing gas to the flow rate control part based upon the pressure measured value acquired from the pressure sensor part through the pressure signal.SELECTED DRAWING: Figure 2
【課題】ガスシャワーヘッド内の圧力を正確、且つ迅速に測定する技術を提供する。【解決手段】基板に処理ガスを供給して基板処理を行う装置において、基板は前記処理容器内に設けられた載置台に載置され、載置台に対向する位置に設けられたガスシャワーヘッドは、その内部のガス拡散空間内に拡散した前記処理ガスを、シャワープレートに形成された複数のガス供給孔を介して処理容器内へ供給する。前記ガス拡散空間に前記処理ガスを供給するためのガス供給部は、処理ガスの流量調節部を備え、圧力センサー部は、前記ガス拡散空間内に設けられ、当該ガス拡散空間内の圧力測定値に対応する圧力信号を出力する。そして制御部は、前記圧力信号を介して前記圧力センサー部より取得した前記圧力測定値に基づき、前記流量調節部に対し、前記処理ガスの流量を調節するための制御信号を出力する。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMhzDAhwDHIMCQ1WcPMPUghwDQJSvp5-7grBoU7BIUAZV4WAIH9n1-BgoKCOgrtjsEKwh3-4a5CCh6uji46Co5-Lgq9riIe_CzEG8DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMjYwMTC3MjM0djohQBAP_fOAM</recordid><startdate>20230407</startdate><enddate>20230407</enddate><creator>AKIMOTO TOSHIKAZU</creator><creator>MAEHARA DAIKI</creator><creator>UMESHITA NAOMI</creator><creator>UEDA HIROICHI</creator><scope>EVB</scope></search><sort><creationdate>20230407</creationdate><title>APPARATUS FOR PERFORMING SUBSTRATE PROCESSING, GAS SHOWER HEAD, AND METHOD FOR PERFORMING SUBSTRATE PROCESSING</title><author>AKIMOTO TOSHIKAZU ; MAEHARA DAIKI ; UMESHITA NAOMI ; UEDA HIROICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023048726A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AKIMOTO TOSHIKAZU</creatorcontrib><creatorcontrib>MAEHARA DAIKI</creatorcontrib><creatorcontrib>UMESHITA NAOMI</creatorcontrib><creatorcontrib>UEDA HIROICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AKIMOTO TOSHIKAZU</au><au>MAEHARA DAIKI</au><au>UMESHITA NAOMI</au><au>UEDA HIROICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR PERFORMING SUBSTRATE PROCESSING, GAS SHOWER HEAD, AND METHOD FOR PERFORMING SUBSTRATE PROCESSING</title><date>2023-04-07</date><risdate>2023</risdate><abstract>To provide a technique for accurately and speedily measuring pressure in a gas shower head.SOLUTION: In an apparatus that supplies processing gas to a substrate to process the substrate, the substrate is mounted on a mount table provided in a processing vessel, and a gas shower head provided opposite the mount table supplies the processing gas diffused in a gas diffusion space therein into the processing vessel through a plurality of gas supply holes formed in a shower plate. A gas supply part for supplying the processing gas into the gas diffusion space comprises a flow rate control part for the processing gas, and a pressure sensor part is provided in the gas diffusion space and outputs a pressure signal corresponding to a pressure measured value in the gas diffusion space. Then, a control part outputs a control signal for controlling the flow rate of the processing gas to the flow rate control part based upon the pressure measured value acquired from the pressure sensor part through the pressure signal.SELECTED DRAWING: Figure 2
【課題】ガスシャワーヘッド内の圧力を正確、且つ迅速に測定する技術を提供する。【解決手段】基板に処理ガスを供給して基板処理を行う装置において、基板は前記処理容器内に設けられた載置台に載置され、載置台に対向する位置に設けられたガスシャワーヘッドは、その内部のガス拡散空間内に拡散した前記処理ガスを、シャワープレートに形成された複数のガス供給孔を介して処理容器内へ供給する。前記ガス拡散空間に前記処理ガスを供給するためのガス供給部は、処理ガスの流量調節部を備え、圧力センサー部は、前記ガス拡散空間内に設けられ、当該ガス拡散空間内の圧力測定値に対応する圧力信号を出力する。そして制御部は、前記圧力信号を介して前記圧力センサー部より取得した前記圧力測定値に基づき、前記流量調節部に対し、前記処理ガスの流量を調節するための制御信号を出力する。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | APPARATUS FOR PERFORMING SUBSTRATE PROCESSING, GAS SHOWER HEAD, AND METHOD FOR PERFORMING SUBSTRATE PROCESSING |
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