SUBSTRATE PROCESSING SYSTEM AND GROUP MANAGEMENT DEVICE

To provide a substrate processing system capable of suppressing an excess of a total flow rate of process liquid used by a plurality of substrate processing apparatuses over a maximum flow rate of process liquid that can be supplied by power facilities.SOLUTION: A substrate processing system 100 inc...

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Hauptverfasser: MIYAZAKI TOSHIHISA, MATSUI HIROAKIRA, KIMURA RYUICHI
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creator MIYAZAKI TOSHIHISA
MATSUI HIROAKIRA
KIMURA RYUICHI
description To provide a substrate processing system capable of suppressing an excess of a total flow rate of process liquid used by a plurality of substrate processing apparatuses over a maximum flow rate of process liquid that can be supplied by power facilities.SOLUTION: A substrate processing system 100 includes a plurality of substrate processing apparatuses 1 and a group management device 2. The substrate processing apparatus 1 is provided with a plan creation part 53. The plan creation part 53 creates a plan showing timing at which the process liquid is used and flow rate of the process liquid. The plurality of substrate processing apparatuses 1 are supplied with the process liquid by a shared power facilities PF. The group management device 2 is provided with a processing part 203. The processing part 203 determines on the basis of plans created by the respective plurality of substrate processing apparatuses 1 whether or not a total flow rate of the process liquid used by the plurality of substrate processing apparatuses 1 exceed a threshold TH, and when it is determined that the total flow rate exceeds the threshold TH, instructs one of the plurality of substrate processing apparatuses 1 to adjust the plan. The plan creation part 53 of the substrate processing apparatus 1 that is instructed to adjust the plan creates a plan where the total flow rate is the threshold or less.SELECTED DRAWING: Figure 1 【課題】複数の基板処理装置が使用する処理液の総流量が、用力設備から供給可能な処理液の最大流量を超えることを抑制できる基板処理システムを提供する。【解決手段】基板処理システム100は、複数の基板処理装置1と、群管理装置2とを備える。基板処理装置1は計画作成部53を備える。計画作成部53は、処理液を使用するタイミングと処理液の流量とを示す計画を作成する。複数の基板処理装置1には共通の用力設備PFから処理液が供給される。群管理装置2は処理部203を備える。処理部203は、複数の基板処理装置1の各々が作成した計画に基づいて、複数の基板処理装置1が使用する処理液の総流量が閾値THを超えるか否かを判定し、総流量が閾値THを超えると判定した場合、複数の基板処理装置1のうちのいずれかに計画の調整を指示する。計画の調整を指示された基板処理装置1の計画作成部53は、総流量が閾値以下となる計画を作成する。【選択図】図1
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The substrate processing apparatus 1 is provided with a plan creation part 53. The plan creation part 53 creates a plan showing timing at which the process liquid is used and flow rate of the process liquid. The plurality of substrate processing apparatuses 1 are supplied with the process liquid by a shared power facilities PF. The group management device 2 is provided with a processing part 203. The processing part 203 determines on the basis of plans created by the respective plurality of substrate processing apparatuses 1 whether or not a total flow rate of the process liquid used by the plurality of substrate processing apparatuses 1 exceed a threshold TH, and when it is determined that the total flow rate exceeds the threshold TH, instructs one of the plurality of substrate processing apparatuses 1 to adjust the plan. The plan creation part 53 of the substrate processing apparatus 1 that is instructed to adjust the plan creates a plan where the total flow rate is the threshold or less.SELECTED DRAWING: Figure 1 【課題】複数の基板処理装置が使用する処理液の総流量が、用力設備から供給可能な処理液の最大流量を超えることを抑制できる基板処理システムを提供する。【解決手段】基板処理システム100は、複数の基板処理装置1と、群管理装置2とを備える。基板処理装置1は計画作成部53を備える。計画作成部53は、処理液を使用するタイミングと処理液の流量とを示す計画を作成する。複数の基板処理装置1には共通の用力設備PFから処理液が供給される。群管理装置2は処理部203を備える。処理部203は、複数の基板処理装置1の各々が作成した計画に基づいて、複数の基板処理装置1が使用する処理液の総流量が閾値THを超えるか否かを判定し、総流量が閾値THを超えると判定した場合、複数の基板処理装置1のうちのいずれかに計画の調整を指示する。計画の調整を指示された基板処理装置1の計画作成部53は、総流量が閾値以下となる計画を作成する。【選択図】図1</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATING SYSTEMS IN GENERAL ; CONTROLLING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS ; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS ; PHYSICS ; REGULATING ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230405&amp;DB=EPODOC&amp;CC=JP&amp;NR=2023046456A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230405&amp;DB=EPODOC&amp;CC=JP&amp;NR=2023046456A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAZAKI TOSHIHISA</creatorcontrib><creatorcontrib>MATSUI HIROAKIRA</creatorcontrib><creatorcontrib>KIMURA RYUICHI</creatorcontrib><title>SUBSTRATE PROCESSING SYSTEM AND GROUP MANAGEMENT DEVICE</title><description>To provide a substrate processing system capable of suppressing an excess of a total flow rate of process liquid used by a plurality of substrate processing apparatuses over a maximum flow rate of process liquid that can be supplied by power facilities.SOLUTION: A substrate processing system 100 includes a plurality of substrate processing apparatuses 1 and a group management device 2. The substrate processing apparatus 1 is provided with a plan creation part 53. The plan creation part 53 creates a plan showing timing at which the process liquid is used and flow rate of the process liquid. The plurality of substrate processing apparatuses 1 are supplied with the process liquid by a shared power facilities PF. The group management device 2 is provided with a processing part 203. The processing part 203 determines on the basis of plans created by the respective plurality of substrate processing apparatuses 1 whether or not a total flow rate of the process liquid used by the plurality of substrate processing apparatuses 1 exceed a threshold TH, and when it is determined that the total flow rate exceeds the threshold TH, instructs one of the plurality of substrate processing apparatuses 1 to adjust the plan. The plan creation part 53 of the substrate processing apparatus 1 that is instructed to adjust the plan creates a plan where the total flow rate is the threshold or less.SELECTED DRAWING: Figure 1 【課題】複数の基板処理装置が使用する処理液の総流量が、用力設備から供給可能な処理液の最大流量を超えることを抑制できる基板処理システムを提供する。【解決手段】基板処理システム100は、複数の基板処理装置1と、群管理装置2とを備える。基板処理装置1は計画作成部53を備える。計画作成部53は、処理液を使用するタイミングと処理液の流量とを示す計画を作成する。複数の基板処理装置1には共通の用力設備PFから処理液が供給される。群管理装置2は処理部203を備える。処理部203は、複数の基板処理装置1の各々が作成した計画に基づいて、複数の基板処理装置1が使用する処理液の総流量が閾値THを超えるか否かを判定し、総流量が閾値THを超えると判定した場合、複数の基板処理装置1のうちのいずれかに計画の調整を指示する。計画の調整を指示された基板処理装置1の計画作成部53は、総流量が閾値以下となる計画を作成する。【選択図】図1</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATING SYSTEMS IN GENERAL</subject><subject>CONTROLLING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</subject><subject>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</subject><subject>PHYSICS</subject><subject>REGULATING</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPDnUKDglyDHFVCAjyd3YNDvb0c1cIjgwOcfVVcPRzUXAP8g8NUPB19HN0d_V19QtRcHEN83R25WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZGxgYmZiamZo7GRCkCAK5AKN4</recordid><startdate>20230405</startdate><enddate>20230405</enddate><creator>MIYAZAKI TOSHIHISA</creator><creator>MATSUI HIROAKIRA</creator><creator>KIMURA RYUICHI</creator><scope>EVB</scope></search><sort><creationdate>20230405</creationdate><title>SUBSTRATE PROCESSING SYSTEM AND GROUP MANAGEMENT DEVICE</title><author>MIYAZAKI TOSHIHISA ; MATSUI HIROAKIRA ; KIMURA RYUICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023046456A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATING SYSTEMS IN GENERAL</topic><topic>CONTROLLING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</topic><topic>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</topic><topic>PHYSICS</topic><topic>REGULATING</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAZAKI TOSHIHISA</creatorcontrib><creatorcontrib>MATSUI HIROAKIRA</creatorcontrib><creatorcontrib>KIMURA RYUICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAZAKI TOSHIHISA</au><au>MATSUI HIROAKIRA</au><au>KIMURA RYUICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING SYSTEM AND GROUP MANAGEMENT DEVICE</title><date>2023-04-05</date><risdate>2023</risdate><abstract>To provide a substrate processing system capable of suppressing an excess of a total flow rate of process liquid used by a plurality of substrate processing apparatuses over a maximum flow rate of process liquid that can be supplied by power facilities.SOLUTION: A substrate processing system 100 includes a plurality of substrate processing apparatuses 1 and a group management device 2. The substrate processing apparatus 1 is provided with a plan creation part 53. The plan creation part 53 creates a plan showing timing at which the process liquid is used and flow rate of the process liquid. The plurality of substrate processing apparatuses 1 are supplied with the process liquid by a shared power facilities PF. The group management device 2 is provided with a processing part 203. The processing part 203 determines on the basis of plans created by the respective plurality of substrate processing apparatuses 1 whether or not a total flow rate of the process liquid used by the plurality of substrate processing apparatuses 1 exceed a threshold TH, and when it is determined that the total flow rate exceeds the threshold TH, instructs one of the plurality of substrate processing apparatuses 1 to adjust the plan. The plan creation part 53 of the substrate processing apparatus 1 that is instructed to adjust the plan creates a plan where the total flow rate is the threshold or less.SELECTED DRAWING: Figure 1 【課題】複数の基板処理装置が使用する処理液の総流量が、用力設備から供給可能な処理液の最大流量を超えることを抑制できる基板処理システムを提供する。【解決手段】基板処理システム100は、複数の基板処理装置1と、群管理装置2とを備える。基板処理装置1は計画作成部53を備える。計画作成部53は、処理液を使用するタイミングと処理液の流量とを示す計画を作成する。複数の基板処理装置1には共通の用力設備PFから処理液が供給される。群管理装置2は処理部203を備える。処理部203は、複数の基板処理装置1の各々が作成した計画に基づいて、複数の基板処理装置1が使用する処理液の総流量が閾値THを超えるか否かを判定し、総流量が閾値THを超えると判定した場合、複数の基板処理装置1のうちのいずれかに計画の調整を指示する。計画の調整を指示された基板処理装置1の計画作成部53は、総流量が閾値以下となる計画を作成する。【選択図】図1</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATING SYSTEMS IN GENERAL
CONTROLLING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FUNCTIONAL ELEMENTS OF SUCH SYSTEMS
MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
title SUBSTRATE PROCESSING SYSTEM AND GROUP MANAGEMENT DEVICE
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