BOARD UNIT AND SEMICONDUCTOR DEVICE
To provide a support-equipped board and a semiconductor device in which stress in a wiring layer is mitigated to reduce susceptibility to the formation of cracks originating from a location where stress is concentrated.SOLUTION: Provided is a support-equipped board 54 including a support 51 and a wi...
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| creator | TANABE MASATO WARIKASHI AKIRA TANABE RYOMA |
| description | To provide a support-equipped board and a semiconductor device in which stress in a wiring layer is mitigated to reduce susceptibility to the formation of cracks originating from a location where stress is concentrated.SOLUTION: Provided is a support-equipped board 54 including a support 51 and a wiring board 66 provided over the support 51. An insulating film 67 in the wiring board 66 is composed of a first organic insulating resin. A first surface and a second surface of the wiring board 66 have electrodes that can be bonded to a semiconductor element or other wiring board. An insulating film on at least one surface layer on the top and the bottom of the wiring board 66 is composed of a second organic insulating resin. The coefficient of thermal expansion of the second organic insulating resin is smaller than the coefficient of thermal expansion of the first organic insulating resin.SELECTED DRAWING: Figure 3A
【課題】配線層内部の応力を緩和させ、応力が集中する箇所を起点とするクラックが生じ難い支持体付き基板、半導体装置を提供することを目的とする。【解決手段】支持体５１と支持体５１の上方に設けられた配線基板６６を備える支持体付き基板５４において、配線基板６６の内部の絶縁膜６７は、第１の有機絶縁樹脂で構成されており、配線基板６６の第１の面および第２の面には、半導体素子または他の配線基板と接合可能な電極が設けられており、配線基板６６の上方または下方の少なくとも一方の表面層の絶縁膜は、第２の有機絶縁樹脂で構成されている。第２の有機絶縁樹脂の熱膨張率は、第１の有機絶縁樹脂の熱膨張率よりも小さくしている。【選択図】図３Ａ |
| format | Patent |
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【課題】配線層内部の応力を緩和させ、応力が集中する箇所を起点とするクラックが生じ難い支持体付き基板、半導体装置を提供することを目的とする。【解決手段】支持体５１と支持体５１の上方に設けられた配線基板６６を備える支持体付き基板５４において、配線基板６６の内部の絶縁膜６７は、第１の有機絶縁樹脂で構成されており、配線基板６６の第１の面および第２の面には、半導体素子または他の配線基板と接合可能な電極が設けられており、配線基板６６の上方または下方の少なくとも一方の表面層の絶縁膜は、第２の有機絶縁樹脂で構成されている。第２の有機絶縁樹脂の熱膨張率は、第１の有機絶縁樹脂の熱膨張率よりも小さくしている。【選択図】図３Ａ</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230403&DB=EPODOC&CC=JP&NR=2023046249A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230403&DB=EPODOC&CC=JP&NR=2023046249A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANABE MASATO</creatorcontrib><creatorcontrib>WARIKASHI AKIRA</creatorcontrib><creatorcontrib>TANABE RYOMA</creatorcontrib><title>BOARD UNIT AND SEMICONDUCTOR DEVICE</title><description>To provide a support-equipped board and a semiconductor device in which stress in a wiring layer is mitigated to reduce susceptibility to the formation of cracks originating from a location where stress is concentrated.SOLUTION: Provided is a support-equipped board 54 including a support 51 and a wiring board 66 provided over the support 51. An insulating film 67 in the wiring board 66 is composed of a first organic insulating resin. A first surface and a second surface of the wiring board 66 have electrodes that can be bonded to a semiconductor element or other wiring board. An insulating film on at least one surface layer on the top and the bottom of the wiring board 66 is composed of a second organic insulating resin. The coefficient of thermal expansion of the second organic insulating resin is smaller than the coefficient of thermal expansion of the first organic insulating resin.SELECTED DRAWING: Figure 3A
【課題】配線層内部の応力を緩和させ、応力が集中する箇所を起点とするクラックが生じ難い支持体付き基板、半導体装置を提供することを目的とする。【解決手段】支持体５１と支持体５１の上方に設けられた配線基板６６を備える支持体付き基板５４において、配線基板６６の内部の絶縁膜６７は、第１の有機絶縁樹脂で構成されており、配線基板６６の第１の面および第２の面には、半導体素子または他の配線基板と接合可能な電極が設けられており、配線基板６６の上方または下方の少なくとも一方の表面層の絶縁膜は、第２の有機絶縁樹脂で構成されている。第２の有機絶縁樹脂の熱膨張率は、第１の有機絶縁樹脂の熱膨張率よりも小さくしている。【選択図】図３Ａ</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB28ncMclEI9fMMUXD0c1EIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRsYGJmZGJpaOxkQpAgCOzSMI</recordid><startdate>20230403</startdate><enddate>20230403</enddate><creator>TANABE MASATO</creator><creator>WARIKASHI AKIRA</creator><creator>TANABE RYOMA</creator><scope>EVB</scope></search><sort><creationdate>20230403</creationdate><title>BOARD UNIT AND SEMICONDUCTOR DEVICE</title><author>TANABE MASATO ; WARIKASHI AKIRA ; TANABE RYOMA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023046249A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TANABE MASATO</creatorcontrib><creatorcontrib>WARIKASHI AKIRA</creatorcontrib><creatorcontrib>TANABE RYOMA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANABE MASATO</au><au>WARIKASHI AKIRA</au><au>TANABE RYOMA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BOARD UNIT AND SEMICONDUCTOR DEVICE</title><date>2023-04-03</date><risdate>2023</risdate><abstract>To provide a support-equipped board and a semiconductor device in which stress in a wiring layer is mitigated to reduce susceptibility to the formation of cracks originating from a location where stress is concentrated.SOLUTION: Provided is a support-equipped board 54 including a support 51 and a wiring board 66 provided over the support 51. An insulating film 67 in the wiring board 66 is composed of a first organic insulating resin. A first surface and a second surface of the wiring board 66 have electrodes that can be bonded to a semiconductor element or other wiring board. An insulating film on at least one surface layer on the top and the bottom of the wiring board 66 is composed of a second organic insulating resin. The coefficient of thermal expansion of the second organic insulating resin is smaller than the coefficient of thermal expansion of the first organic insulating resin.SELECTED DRAWING: Figure 3A
【課題】配線層内部の応力を緩和させ、応力が集中する箇所を起点とするクラックが生じ難い支持体付き基板、半導体装置を提供することを目的とする。【解決手段】支持体５１と支持体５１の上方に設けられた配線基板６６を備える支持体付き基板５４において、配線基板６６の内部の絶縁膜６７は、第１の有機絶縁樹脂で構成されており、配線基板６６の第１の面および第２の面には、半導体素子または他の配線基板と接合可能な電極が設けられており、配線基板６６の上方または下方の少なくとも一方の表面層の絶縁膜は、第２の有機絶縁樹脂で構成されている。第２の有機絶縁樹脂の熱膨張率は、第１の有機絶縁樹脂の熱膨張率よりも小さくしている。【選択図】図３Ａ</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
| title | BOARD UNIT AND SEMICONDUCTOR DEVICE |
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