SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
To provide a semiconductor device that can easily achieve improvement of breakdown voltage and miniaturization and a manufacturing method for the same.SOLUTION: A semiconductor substrate SB has a surface SU and a convex part CON protruding upwardly from the surface SU. An n-type drift area DF has a...
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| creator | NAKASHIBA YASUTAKA KOSHIMIZU AKIRA KAWAI TORU |
| description | To provide a semiconductor device that can easily achieve improvement of breakdown voltage and miniaturization and a manufacturing method for the same.SOLUTION: A semiconductor substrate SB has a surface SU and a convex part CON protruding upwardly from the surface SU. An n-type drift area DF has a part DF2 located inside the convex part CON. An n-drain area DR has an n-type impurity concentration higher than that of the n-type drift area DF. The n-type drift area DF is sandwiched between the n-drain area DR and a gate electrode GE. The n-drain area DR is arranged inside the convex part CON on the n-type drift area DF.SELECTED DRAWING: Figure 2
【課題】耐圧向上および小型化が容易な半導体装置およびその製造方法を提供する。【解決手段】半導体基板ＳＢは、表面ＳＵと、表面ＳＵから上方に突き出す凸部ＣＯＮとを有する。ｎ型ドリフト領域ＤＦは、凸部ＣＯＮの内部に位置する部分ＤＦ２を有する。ｎ-ドレイン領域ＤＲは、ｎ型ドリフト領域ＤＦよりも高いｎ型不純物濃度を有し、平面視においてゲート電極ＧＥとの間でｎ型ドリフト領域ＤＦを挟み、かつ凸部ＣＯＮの内部であってｎ型ドリフト領域ＤＦ上に配置されている。【選択図】図２ |
| format | Patent |
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【課題】耐圧向上および小型化が容易な半導体装置およびその製造方法を提供する。【解決手段】半導体基板ＳＢは、表面ＳＵと、表面ＳＵから上方に突き出す凸部ＣＯＮとを有する。ｎ型ドリフト領域ＤＦは、凸部ＣＯＮの内部に位置する部分ＤＦ２を有する。ｎ-ドレイン領域ＤＲは、ｎ型ドリフト領域ＤＦよりも高いｎ型不純物濃度を有し、平面視においてゲート電極ＧＥとの間でｎ型ドリフト領域ＤＦを挟み、かつ凸部ＣＯＮの内部であってｎ型ドリフト領域ＤＦ上に配置されている。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=JP&NR=2023031640A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=JP&NR=2023031640A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKASHIBA YASUTAKA</creatorcontrib><creatorcontrib>KOSHIMIZU AKIRA</creatorcontrib><creatorcontrib>KAWAI TORU</creatorcontrib><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME</title><description>To provide a semiconductor device that can easily achieve improvement of breakdown voltage and miniaturization and a manufacturing method for the same.SOLUTION: A semiconductor substrate SB has a surface SU and a convex part CON protruding upwardly from the surface SU. An n-type drift area DF has a part DF2 located inside the convex part CON. An n-drain area DR has an n-type impurity concentration higher than that of the n-type drift area DF. The n-type drift area DF is sandwiched between the n-drain area DR and a gate electrode GE. The n-drain area DR is arranged inside the convex part CON on the n-type drift area DF.SELECTED DRAWING: Figure 2
【課題】耐圧向上および小型化が容易な半導体装置およびその製造方法を提供する。【解決手段】半導体基板ＳＢは、表面ＳＵと、表面ＳＵから上方に突き出す凸部ＣＯＮとを有する。ｎ型ドリフト領域ＤＦは、凸部ＣＯＮの内部に位置する部分ＤＦ２を有する。ｎ-ドレイン領域ＤＲは、ｎ型ドリフト領域ＤＦよりも高いｎ型不純物濃度を有し、平面視においてゲート電極ＧＥとの間でｎ型ドリフト領域ＤＦを挟み、かつ凸部ＣＯＮの内部であってｎ型ドリフト領域ＤＦ上に配置されている。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdRcAOqCfFwVQh29HXlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkbGBsaGZiYGjsZEKQIA_bEpRA</recordid><startdate>20230309</startdate><enddate>20230309</enddate><creator>NAKASHIBA YASUTAKA</creator><creator>KOSHIMIZU AKIRA</creator><creator>KAWAI TORU</creator><scope>EVB</scope></search><sort><creationdate>20230309</creationdate><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME</title><author>NAKASHIBA YASUTAKA ; KOSHIMIZU AKIRA ; KAWAI TORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023031640A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKASHIBA YASUTAKA</creatorcontrib><creatorcontrib>KOSHIMIZU AKIRA</creatorcontrib><creatorcontrib>KAWAI TORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKASHIBA YASUTAKA</au><au>KOSHIMIZU AKIRA</au><au>KAWAI TORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME</title><date>2023-03-09</date><risdate>2023</risdate><abstract>To provide a semiconductor device that can easily achieve improvement of breakdown voltage and miniaturization and a manufacturing method for the same.SOLUTION: A semiconductor substrate SB has a surface SU and a convex part CON protruding upwardly from the surface SU. An n-type drift area DF has a part DF2 located inside the convex part CON. An n-drain area DR has an n-type impurity concentration higher than that of the n-type drift area DF. The n-type drift area DF is sandwiched between the n-drain area DR and a gate electrode GE. The n-drain area DR is arranged inside the convex part CON on the n-type drift area DF.SELECTED DRAWING: Figure 2
【課題】耐圧向上および小型化が容易な半導体装置およびその製造方法を提供する。【解決手段】半導体基板ＳＢは、表面ＳＵと、表面ＳＵから上方に突き出す凸部ＣＯＮとを有する。ｎ型ドリフト領域ＤＦは、凸部ＣＯＮの内部に位置する部分ＤＦ２を有する。ｎ-ドレイン領域ＤＲは、ｎ型ドリフト領域ＤＦよりも高いｎ型不純物濃度を有し、平面視においてゲート電極ＧＥとの間でｎ型ドリフト領域ＤＦを挟み、かつ凸部ＣＯＮの内部であってｎ型ドリフト領域ＤＦ上に配置されている。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME |
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