MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE

To provide a manufacturing method for a single crystal silicon substrate with high productivity.SOLUTION: After a release layer is formed inside a single crystal silicon ingot, a single crystal silicon substrate is separated from the single crystal silicon ingot starting from the release layer. Ther...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HIRATA KAZUYA, TABATA SHIN, IGA YUTO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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