MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE
To provide a manufacturing method for a single crystal silicon substrate with high productivity.SOLUTION: After a release layer is formed inside a single crystal silicon ingot, a single crystal silicon substrate is separated from the single crystal silicon ingot starting from the release layer. Ther...
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| creator | HIRATA KAZUYA TABATA SHIN IGA YUTO |
| description | To provide a manufacturing method for a single crystal silicon substrate with high productivity.SOLUTION: After a release layer is formed inside a single crystal silicon ingot, a single crystal silicon substrate is separated from the single crystal silicon ingot starting from the release layer. Thereby, the productivity of the single crystal silicon substrate can be improved as compared with a case of manufacturing the single crystal silicon substrate from the single crystal silicon ingot using a wire saw.SELECTED DRAWING: Figure 3
【課題】生産性が高い単結晶シリコン基板の製造方法を提供する。【解決手段】単結晶シリコンインゴットの内部に剥離層を形成した後、この剥離層を起点として単結晶シリコンインゴットから単結晶シリコン基板を分離する。これにより、単結晶シリコンインゴットからワイヤーソーを用いて単結晶シリコン基板を製造する場合と比較して、単結晶シリコン基板の生産性を向上させることができる。【選択図】図３ |
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【課題】生産性が高い単結晶シリコン基板の製造方法を提供する。【解決手段】単結晶シリコンインゴットの内部に剥離層を形成した後、この剥離層を起点として単結晶シリコンインゴットから単結晶シリコン基板を分離する。これにより、単結晶シリコンインゴットからワイヤーソーを用いて単結晶シリコン基板を製造する場合と比較して、単結晶シリコン基板の生産性を向上させることができる。【選択図】図３</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230303&DB=EPODOC&CC=JP&NR=2023027820A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230303&DB=EPODOC&CC=JP&NR=2023027820A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIRATA KAZUYA</creatorcontrib><creatorcontrib>TABATA SHIN</creatorcontrib><creatorcontrib>IGA YUTO</creatorcontrib><title>MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE</title><description>To provide a manufacturing method for a single crystal silicon substrate with high productivity.SOLUTION: After a release layer is formed inside a single crystal silicon ingot, a single crystal silicon substrate is separated from the single crystal silicon ingot starting from the release layer. Thereby, the productivity of the single crystal silicon substrate can be improved as compared with a case of manufacturing the single crystal silicon substrate from the single crystal silicon ingot using a wire saw.SELECTED DRAWING: Figure 3
【課題】生産性が高い単結晶シリコン基板の製造方法を提供する。【解決手段】単結晶シリコンインゴットの内部に剥離層を形成した後、この剥離層を起点として単結晶シリコンインゴットから単結晶シリコン基板を分離する。これにより、単結晶シリコンインゴットからワイヤーソーを用いて単結晶シリコン基板を製造する場合と比較して、単結晶シリコン基板の生産性を向上させることができる。【選択図】図３</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MIBnJ9XBWcgyKDQxx9gFwfT2d_P4XgUKfgkCDHEFceBta0xJziVF4ozc2g5OYa4uyhm1qQH59aXJCYnJqXWhLvFWBkYGRsYGRuYWTgaEyUIgDRcCkj</recordid><startdate>20230303</startdate><enddate>20230303</enddate><creator>HIRATA KAZUYA</creator><creator>TABATA SHIN</creator><creator>IGA YUTO</creator><scope>EVB</scope></search><sort><creationdate>20230303</creationdate><title>MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE</title><author>HIRATA KAZUYA ; TABATA SHIN ; IGA YUTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023027820A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>HIRATA KAZUYA</creatorcontrib><creatorcontrib>TABATA SHIN</creatorcontrib><creatorcontrib>IGA YUTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIRATA KAZUYA</au><au>TABATA SHIN</au><au>IGA YUTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE</title><date>2023-03-03</date><risdate>2023</risdate><abstract>To provide a manufacturing method for a single crystal silicon substrate with high productivity.SOLUTION: After a release layer is formed inside a single crystal silicon ingot, a single crystal silicon substrate is separated from the single crystal silicon ingot starting from the release layer. Thereby, the productivity of the single crystal silicon substrate can be improved as compared with a case of manufacturing the single crystal silicon substrate from the single crystal silicon ingot using a wire saw.SELECTED DRAWING: Figure 3
【課題】生産性が高い単結晶シリコン基板の製造方法を提供する。【解決手段】単結晶シリコンインゴットの内部に剥離層を形成した後、この剥離層を起点として単結晶シリコンインゴットから単結晶シリコン基板を分離する。これにより、単結晶シリコンインゴットからワイヤーソーを用いて単結晶シリコン基板を製造する場合と比較して、単結晶シリコン基板の生産性を向上させることができる。【選択図】図３</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE |
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