MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES AND SEMICONDUCTOR MANUFACTURING EQUIPMENT

To provide a manufacturing method of semiconductor devices capable of suppressing variations in thickness of oxide films among multiple SiC wafers.SOLUTION: The manufacturing method of semiconductor devices includes steps of: performing etching on multiple silicon carbide wafers so that the thickness of a first inorganic film remains at least 750nm after forming the first inorganic film on the underside of the multiple silicon carbide wafers; and forming an oxide film on the upper surface of the multiple silicon carbide wafers by performing thermal oxidation treatment after the etching. The thermal oxidation treatment is performed in a state where at least one wafer including at least one of a dummy wafer or a monitor wafer and the multiple silicon carbide wafers are arranged along one direction with the upper surfaces of the multiple silicon carbide wafers are directed in the one direction. In the state of thermal oxidation treatment, a first silicon carbide wafer out of the multiple silicon carbide wafers is positioned directly under at least one of the wafers and a second silicon carbide wafer out of the multiple silicon carbide wafers is arranged directly under a third silicon carbide wafer out of the multiple silicon carbide wafers.SELECTED DRAWING: Figure 1 【課題】複数のＳｉＣウエハ間での酸化膜の厚さのばらつきを抑えることのできる半導体装置の製造方法を提供する。【解決手段】複数の炭化珪素ウエハの下面に第１無機膜を形成した後に複数の炭化珪素ウエハのエッチングを第１無機膜の厚さが７５０ｎｍ以上残るように行い、エッチングの後に熱酸化処理を行って複数の炭化珪素ウエハの上面に酸化膜を形成し、熱酸化処理を、ダミーウエハまたはモニターウエハの少なくともいずれかを含む少なくとも１つのウエハおよび複数の炭化珪素ウエハが一方向に沿ってかつ複数の炭化珪素ウエハの上面を一方向に向けて並べられた状態で行い、熱酸化処理の状態において、複数の炭化珪素ウエハのうちの第１の炭化珪素ウエハは少なくとも１つのウエハのいずれかの直下に配置され、複数の炭化珪素ウエハのうちの第２の炭化珪素ウエハは複数の炭化珪素ウエハのうちの第３の炭化珪素ウエハの直下に配置されている。【選択図】図１