SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To provide a semiconductor device that can be simplified in configuration while suppressing cracks in the electrodes on the semiconductor element.SOLUTION: In a protective film 18, cell apertures 18a, which open the cell area, and peripheral apertures 18b, which are connected to the cell apertures 1...
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| description | To provide a semiconductor device that can be simplified in configuration while suppressing cracks in the electrodes on the semiconductor element.SOLUTION: In a protective film 18, cell apertures 18a, which open the cell area, and peripheral apertures 18b, which are connected to the cell apertures 18a and open a part of an outer circumference area 2, are formed as apertures. An electrode 19 is composed by stacking a base electrode 19a and a protective electrode 19b, which is harder than the base electrode 19a, and formed from the cell aperture 18a to the peripheral aperture 18b. The protective electrode 19b is made so that a groove 20 is formed in the portion formed in the peripheral aperture 18b.SELECTED DRAWING: Figure 2
【課題】半導体素子上の電極にクラックが発生することを抑制しつつ、構成の簡素化を図ることのできる半導体装置を提供することを目的とする。【解決手段】保護膜１８には、開口部として、セル領域を開口させるセル用開口部１８ａと、セル用開口部１８ａと繋がっており、外周領域２の一部を開口させる外周用開口部１８ｂとを形成する。電極１９は、下地電極１９ａと、下地電極１９ａより硬度が高くされた保護電極１９ｂとを積層して構成し、セル用開口部１８ａから外周用開口部１８ｂに渡って形成する。そして、保護電極１９ｂは、外周用開口部１８ｂに形成された部分に溝部２０が形成されるようにする。【選択図】図２ |
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【課題】半導体素子上の電極にクラックが発生することを抑制しつつ、構成の簡素化を図ることのできる半導体装置を提供することを目的とする。【解決手段】保護膜１８には、開口部として、セル領域を開口させるセル用開口部１８ａと、セル用開口部１８ａと繋がっており、外周領域２の一部を開口させる外周用開口部１８ｂとを形成する。電極１９は、下地電極１９ａと、下地電極１９ａより硬度が高くされた保護電極１９ｂとを積層して構成し、セル用開口部１８ａから外周用開口部１８ｂに渡って形成する。そして、保護電極１９ｂは、外周用開口部１８ｂに形成された部分に溝部２０が形成されるようにする。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221222&DB=EPODOC&CC=JP&NR=2022189411A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221222&DB=EPODOC&CC=JP&NR=2022189411A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAHARA SHINICHIRO</creatorcontrib><creatorcontrib>ARAI RYUTA</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><description>To provide a semiconductor device that can be simplified in configuration while suppressing cracks in the electrodes on the semiconductor element.SOLUTION: In a protective film 18, cell apertures 18a, which open the cell area, and peripheral apertures 18b, which are connected to the cell apertures 18a and open a part of an outer circumference area 2, are formed as apertures. An electrode 19 is composed by stacking a base electrode 19a and a protective electrode 19b, which is harder than the base electrode 19a, and formed from the cell aperture 18a to the peripheral aperture 18b. The protective electrode 19b is made so that a groove 20 is formed in the portion formed in the peripheral aperture 18b.SELECTED DRAWING: Figure 2
【課題】半導体素子上の電極にクラックが発生することを抑制しつつ、構成の簡素化を図ることのできる半導体装置を提供することを目的とする。【解決手段】保護膜１８には、開口部として、セル領域を開口させるセル用開口部１８ａと、セル用開口部１８ａと繋がっており、外周領域２の一部を開口させる外周用開口部１８ｂとを形成する。電極１９は、下地電極１９ａと、下地電極１９ａより硬度が高くされた保護電極１９ｂとを積層して構成し、セル用開口部１８ａから外周用開口部１８ｂに渡って形成する。そして、保護電極１９ｂは、外周用開口部１８ｂに形成された部分に溝部２０が形成されるようにする。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADivo6-oW6OTqHhAZ5-rkrhHi4KgQ7-rryMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjAyMjQwtLE0NDR2OiFAEA_LApVg</recordid><startdate>20221222</startdate><enddate>20221222</enddate><creator>MIYAHARA SHINICHIRO</creator><creator>ARAI RYUTA</creator><scope>EVB</scope></search><sort><creationdate>20221222</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><author>MIYAHARA SHINICHIRO ; ARAI RYUTA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022189411A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAHARA SHINICHIRO</creatorcontrib><creatorcontrib>ARAI RYUTA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAHARA SHINICHIRO</au><au>ARAI RYUTA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME</title><date>2022-12-22</date><risdate>2022</risdate><abstract>To provide a semiconductor device that can be simplified in configuration while suppressing cracks in the electrodes on the semiconductor element.SOLUTION: In a protective film 18, cell apertures 18a, which open the cell area, and peripheral apertures 18b, which are connected to the cell apertures 18a and open a part of an outer circumference area 2, are formed as apertures. An electrode 19 is composed by stacking a base electrode 19a and a protective electrode 19b, which is harder than the base electrode 19a, and formed from the cell aperture 18a to the peripheral aperture 18b. The protective electrode 19b is made so that a groove 20 is formed in the portion formed in the peripheral aperture 18b.SELECTED DRAWING: Figure 2
【課題】半導体素子上の電極にクラックが発生することを抑制しつつ、構成の簡素化を図ることのできる半導体装置を提供することを目的とする。【解決手段】保護膜１８には、開口部として、セル領域を開口させるセル用開口部１８ａと、セル用開口部１８ａと繋がっており、外周領域２の一部を開口させる外周用開口部１８ｂとを形成する。電極１９は、下地電極１９ａと、下地電極１９ａより硬度が高くされた保護電極１９ｂとを積層して構成し、セル用開口部１８ａから外周用開口部１８ｂに渡って形成する。そして、保護電極１９ｂは、外周用開口部１８ｂに形成された部分に溝部２０が形成されるようにする。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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