SUBSTRATE PROCESSING METHOD

To prevent deterioration in thin film properties due to temperature regulation at the inside of a chamber, when a substrate is processed.SOLUTION: There is disclosed a substrate processing method including: a pressurizing step of raising a process pressure from a first pressure P1 to a second pressure P2 that is greater than the atmospheric pressure; a depressurizing step of lowering the process pressure from a sixth pressure P6, which is greater than the atmospheric pressure, to a seventh pressure P7; and an annealing step of changing the process pressure into a preset pressure change pattern between the pressurizing step and the depressurizing step, under a temperature atmosphere of a second temperature T2 higher than the room temperature. A temperature raising step of raising a temperature atmosphere from a first temperature T1 to the second temperature T2 is performed from a preset temperature raising start point t1 to a preset temperature raising end point t2 while the pressurizing step is performed or after the pressurizing step is performed.SELECTED DRAWING: Figure 2 【課題】基板処理時、チャンバ内部の温度調節による薄膜特性の低下を防止する。【解決手段】工程圧を第１の圧力Ｐ１から大気圧よりも高い第２の圧力Ｐ２に上昇させる加圧ステップと、工程圧を大気圧よりも高い第６の圧力Ｐ６から第７の圧力Ｐ７に下降させる減圧ステップと、室温よりも高い第２の温度Ｔ２の温度雰囲気下で、工程圧を前記加圧ステップ及び前記減圧ステップの間で予め設定された圧力変化パターンに変えるアニールステップと、を含み、前記加圧ステップの実施中又は前記加圧ステップの実施後に、予め設定された昇温始点ｔ１から予め設定された昇温終点ｔ２までの温度雰囲気を第１の温度Ｔ１から前記第２の温度Ｔ２に昇温させる昇温ステップを行う基板処理方法を開示する。【選択図】図２