SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device in which the bending or inclination of a layer can be reduced.SOLUTION: A semiconductor storage device 1 according to an embodiment includes a first laminate SK1 in which a plurality of conductive layers WL and a plurality of insulating layers OL are stacked alternately, the first laminate SK1 including a step part SR processed in a step-like shape extending in a first direction so that the conductive layers WL form a terrace surface, an insulating film IL1 covering an upper part of the first laminate SK1 including the step part SR, and a first plate-shaped part ST extending in the first direction on at least one side surface side of the step part SR and penetrating the first laminate SK1, the first plate-shaped part ST including a bridge part BR disposed intermittently in the first direction at least on an upper end part and connecting the insulating film IL1 on both sides of the first plate-shaped part ST.SELECTED DRAWING: Figure 3 【課題】層の撓みや傾斜を低減できる半導体記憶装置を提供する。【解決手段】実施形態による半導体記憶装置１は、複数の導電層ＷＬと複数の絶縁層ＯＬとが交互に一層ずつ積層され、前記複数の導電層ＷＬがテラス面を形成するように第１の方向に延びる階段状に加工された階段部ＳＲを含む第１の積層体ＳＫ１と、前記階段部ＳＲを含む前記第１の積層体ＳＫ１の上方を覆う絶縁膜ＩＬ１と、前記階段部ＳＲの少なくとも一つの側面側に前記第１の方向に沿って延び、前記第１の積層体ＳＫ１を貫通する第１の板状部ＳＴであって、少なくとも上端部に前記第１の方向に間欠的に配置され、前記絶縁膜ＩＬ１を前記第１の板状部ＳＴの両側で接続する架橋部ＢＰを含む当該第１の板状部ＳＴとを備える。【選択図】図３