MAGNETIC MEMORY
To enable a control of a stop position of a magnetic wall with high accuracy.SOLUTION: A magnetic memory according to the present embodiment comprises: a first wiring and a second wiring; an insulator part; a first part electrically connected to the first wiring; a second part electrically connected...
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creator | NAKANISHI TSUTOMU KONDO TAKESHI MICHAEL ARNAUD QUINSAT SHIMOMURA NAOHARU HASHIMOTO SUSUMU KADO MASATERU UMEZU NOBUYUKI OTERA YASUAKI NAKAMURA SHIHO |
description | To enable a control of a stop position of a magnetic wall with high accuracy.SOLUTION: A magnetic memory according to the present embodiment comprises: a first wiring and a second wiring; an insulator part; a first part electrically connected to the first wiring; a second part electrically connected to the second wiring; and a third part arranged between the first part and the second part; a magnetic member that is extended along a first direction from the first part to the second part and surrounding the insulator part, and in which, in a cross section containing one part of the magnetic member along the first direction and one part of the insulator part, a curvature in the cross section of the first part is smaller than that in the cross section of the third part, and a length in the first direction of the first part is longer than a half value of the length in the first direction of the third part; and a control circuit electrically connected to the first wiring and the second wiring.SELECTED DRAWING: Figure 1
【課題】磁壁の停止位置を精度良く制御することを可能にする。【解決手段】本実施形態による磁気メモリは、第1配線および第2配線と、絶縁体部と、前記第1配線に電気的に接続された第1部分と、前記第2配線に電気的に接続された第2部分と、前記第1部分と前記第2部分との間に配置された第3部分と、を含み、前記第1部分から前記第2部分に向かう第1方向に沿って延びかつ前記絶縁体部を取り囲む磁性部材であって、前記第1方向に沿い前記磁性部材の一部および前記絶縁体部の一部を含む断面において、前記第1部分の断面における曲率が前記第3部分の断面における曲率よりも小さく、前記第1部分の前記第1方向の長さが前記第3部分の前記第1方向の長さの半分の値よりも長い前記磁性部材と、前記第1配線および前記第2配線に電気的に接続された制御回路と、を備えている。【選択図】図1 |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2022144064A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2022144064A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2022144064A3</originalsourceid><addsrcrecordid>eNrjZOD3dXT3cw3xdFbwdfX1D4rkYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkZGhiYmBmYmjsZEKQIAHXIdnQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MAGNETIC MEMORY</title><source>esp@cenet</source><creator>NAKANISHI TSUTOMU ; KONDO TAKESHI ; MICHAEL ARNAUD QUINSAT ; SHIMOMURA NAOHARU ; HASHIMOTO SUSUMU ; KADO MASATERU ; UMEZU NOBUYUKI ; OTERA YASUAKI ; NAKAMURA SHIHO</creator><creatorcontrib>NAKANISHI TSUTOMU ; KONDO TAKESHI ; MICHAEL ARNAUD QUINSAT ; SHIMOMURA NAOHARU ; HASHIMOTO SUSUMU ; KADO MASATERU ; UMEZU NOBUYUKI ; OTERA YASUAKI ; NAKAMURA SHIHO</creatorcontrib><description>To enable a control of a stop position of a magnetic wall with high accuracy.SOLUTION: A magnetic memory according to the present embodiment comprises: a first wiring and a second wiring; an insulator part; a first part electrically connected to the first wiring; a second part electrically connected to the second wiring; and a third part arranged between the first part and the second part; a magnetic member that is extended along a first direction from the first part to the second part and surrounding the insulator part, and in which, in a cross section containing one part of the magnetic member along the first direction and one part of the insulator part, a curvature in the cross section of the first part is smaller than that in the cross section of the third part, and a length in the first direction of the first part is longer than a half value of the length in the first direction of the third part; and a control circuit electrically connected to the first wiring and the second wiring.SELECTED DRAWING: Figure 1
【課題】磁壁の停止位置を精度良く制御することを可能にする。【解決手段】本実施形態による磁気メモリは、第1配線および第2配線と、絶縁体部と、前記第1配線に電気的に接続された第1部分と、前記第2配線に電気的に接続された第2部分と、前記第1部分と前記第2部分との間に配置された第3部分と、を含み、前記第1部分から前記第2部分に向かう第1方向に沿って延びかつ前記絶縁体部を取り囲む磁性部材であって、前記第1方向に沿い前記磁性部材の一部および前記絶縁体部の一部を含む断面において、前記第1部分の断面における曲率が前記第3部分の断面における曲率よりも小さく、前記第1部分の前記第1方向の長さが前記第3部分の前記第1方向の長さの半分の値よりも長い前記磁性部材と、前記第1配線および前記第2配線に電気的に接続された制御回路と、を備えている。【選択図】図1</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221003&DB=EPODOC&CC=JP&NR=2022144064A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221003&DB=EPODOC&CC=JP&NR=2022144064A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKANISHI TSUTOMU</creatorcontrib><creatorcontrib>KONDO TAKESHI</creatorcontrib><creatorcontrib>MICHAEL ARNAUD QUINSAT</creatorcontrib><creatorcontrib>SHIMOMURA NAOHARU</creatorcontrib><creatorcontrib>HASHIMOTO SUSUMU</creatorcontrib><creatorcontrib>KADO MASATERU</creatorcontrib><creatorcontrib>UMEZU NOBUYUKI</creatorcontrib><creatorcontrib>OTERA YASUAKI</creatorcontrib><creatorcontrib>NAKAMURA SHIHO</creatorcontrib><title>MAGNETIC MEMORY</title><description>To enable a control of a stop position of a magnetic wall with high accuracy.SOLUTION: A magnetic memory according to the present embodiment comprises: a first wiring and a second wiring; an insulator part; a first part electrically connected to the first wiring; a second part electrically connected to the second wiring; and a third part arranged between the first part and the second part; a magnetic member that is extended along a first direction from the first part to the second part and surrounding the insulator part, and in which, in a cross section containing one part of the magnetic member along the first direction and one part of the insulator part, a curvature in the cross section of the first part is smaller than that in the cross section of the third part, and a length in the first direction of the first part is longer than a half value of the length in the first direction of the third part; and a control circuit electrically connected to the first wiring and the second wiring.SELECTED DRAWING: Figure 1
【課題】磁壁の停止位置を精度良く制御することを可能にする。【解決手段】本実施形態による磁気メモリは、第1配線および第2配線と、絶縁体部と、前記第1配線に電気的に接続された第1部分と、前記第2配線に電気的に接続された第2部分と、前記第1部分と前記第2部分との間に配置された第3部分と、を含み、前記第1部分から前記第2部分に向かう第1方向に沿って延びかつ前記絶縁体部を取り囲む磁性部材であって、前記第1方向に沿い前記磁性部材の一部および前記絶縁体部の一部を含む断面において、前記第1部分の断面における曲率が前記第3部分の断面における曲率よりも小さく、前記第1部分の前記第1方向の長さが前記第3部分の前記第1方向の長さの半分の値よりも長い前記磁性部材と、前記第1配線および前記第2配線に電気的に接続された制御回路と、を備えている。【選択図】図1</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD3dXT3cw3xdFbwdfX1D4rkYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkZGhiYmBmYmjsZEKQIAHXIdnQ</recordid><startdate>20221003</startdate><enddate>20221003</enddate><creator>NAKANISHI TSUTOMU</creator><creator>KONDO TAKESHI</creator><creator>MICHAEL ARNAUD QUINSAT</creator><creator>SHIMOMURA NAOHARU</creator><creator>HASHIMOTO SUSUMU</creator><creator>KADO MASATERU</creator><creator>UMEZU NOBUYUKI</creator><creator>OTERA YASUAKI</creator><creator>NAKAMURA SHIHO</creator><scope>EVB</scope></search><sort><creationdate>20221003</creationdate><title>MAGNETIC MEMORY</title><author>NAKANISHI TSUTOMU ; KONDO TAKESHI ; MICHAEL ARNAUD QUINSAT ; SHIMOMURA NAOHARU ; HASHIMOTO SUSUMU ; KADO MASATERU ; UMEZU NOBUYUKI ; OTERA YASUAKI ; NAKAMURA SHIHO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022144064A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKANISHI TSUTOMU</creatorcontrib><creatorcontrib>KONDO TAKESHI</creatorcontrib><creatorcontrib>MICHAEL ARNAUD QUINSAT</creatorcontrib><creatorcontrib>SHIMOMURA NAOHARU</creatorcontrib><creatorcontrib>HASHIMOTO SUSUMU</creatorcontrib><creatorcontrib>KADO MASATERU</creatorcontrib><creatorcontrib>UMEZU NOBUYUKI</creatorcontrib><creatorcontrib>OTERA YASUAKI</creatorcontrib><creatorcontrib>NAKAMURA SHIHO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKANISHI TSUTOMU</au><au>KONDO TAKESHI</au><au>MICHAEL ARNAUD QUINSAT</au><au>SHIMOMURA NAOHARU</au><au>HASHIMOTO SUSUMU</au><au>KADO MASATERU</au><au>UMEZU NOBUYUKI</au><au>OTERA YASUAKI</au><au>NAKAMURA SHIHO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETIC MEMORY</title><date>2022-10-03</date><risdate>2022</risdate><abstract>To enable a control of a stop position of a magnetic wall with high accuracy.SOLUTION: A magnetic memory according to the present embodiment comprises: a first wiring and a second wiring; an insulator part; a first part electrically connected to the first wiring; a second part electrically connected to the second wiring; and a third part arranged between the first part and the second part; a magnetic member that is extended along a first direction from the first part to the second part and surrounding the insulator part, and in which, in a cross section containing one part of the magnetic member along the first direction and one part of the insulator part, a curvature in the cross section of the first part is smaller than that in the cross section of the third part, and a length in the first direction of the first part is longer than a half value of the length in the first direction of the third part; and a control circuit electrically connected to the first wiring and the second wiring.SELECTED DRAWING: Figure 1
【課題】磁壁の停止位置を精度良く制御することを可能にする。【解決手段】本実施形態による磁気メモリは、第1配線および第2配線と、絶縁体部と、前記第1配線に電気的に接続された第1部分と、前記第2配線に電気的に接続された第2部分と、前記第1部分と前記第2部分との間に配置された第3部分と、を含み、前記第1部分から前記第2部分に向かう第1方向に沿って延びかつ前記絶縁体部を取り囲む磁性部材であって、前記第1方向に沿い前記磁性部材の一部および前記絶縁体部の一部を含む断面において、前記第1部分の断面における曲率が前記第3部分の断面における曲率よりも小さく、前記第1部分の前記第1方向の長さが前記第3部分の前記第1方向の長さの半分の値よりも長い前記磁性部材と、前記第1配線および前記第2配線に電気的に接続された制御回路と、を備えている。【選択図】図1</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
title | MAGNETIC MEMORY |
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