GAS TREATMENT APPARATUS

To provide a gas treatment apparatus which can suppress occurrence of defects in a substrate due to particles in gas treatment using fluorine-containing gas and basic gas.SOLUTION: A gas treatment apparatus for subjecting a substrate to gas treatment has a chamber storing the substrate, a gas supply...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YOSHIMURA AKIHIRO, NISHIMURA KAZUAKI, ASAHI KENSHIRO, HANDA TATSUYA, SAEGUSA YUJI, FURUSAWA MASAKI, SASAHARA REIKO
Format: Patent
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YOSHIMURA AKIHIRO
NISHIMURA KAZUAKI
ASAHI KENSHIRO
HANDA TATSUYA
SAEGUSA YUJI
FURUSAWA MASAKI
SASAHARA REIKO
description To provide a gas treatment apparatus which can suppress occurrence of defects in a substrate due to particles in gas treatment using fluorine-containing gas and basic gas.SOLUTION: A gas treatment apparatus for subjecting a substrate to gas treatment has a chamber storing the substrate, a gas supply mechanism for individually supplying fluorine-containing gas and basic gas, and a gas introduction member for making the fluorine-containing gas and the basic gas supplied from the gas supply mechanism join each other, and introducing mixed gas obtained by mixing the fluorine-containing gas and the basic gas into the chamber, wherein a part including a confluent part of the fluorine-containing gas and the basic gas of the gas introduction member is composed of an aluminum-based material, and a resin coating is formed in a part including at least the confluent part.SELECTED DRAWING: Figure 1 【課題】フッ素含有ガスと塩基性ガスを用いるガス処理の際に、パーティクルにより基板に欠陥が生じることを抑制可能なガス処理装置を提供する。【解決手段】基板にガス処理を施すガス処理装置は、基板が収容されるチャンバーと、フッ素含有ガスと塩基性ガスとを個別に供給するガス供給機構と、ガス供給機構から供給されたフッ素含有ガスと塩基性ガスとを合流させ、フッ素含有ガスと塩基性ガスとが混合された混合ガスをチャンバーに導入するガス導入部材とを有し、ガス導入部材のフッ素含有ガスと塩基性ガスとの合流箇所を含む部分はアルミニウム系材料で構成されており、少なくとも、合流箇所を含む部分に樹脂コーティングが形成されている。【選択図】図1
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2022142996A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2022142996A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2022142996A3</originalsourceid><addsrcrecordid>eNrjZBB3dwxWCAlydQzxdfULUXAMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRkaGJkaWlmaOxkQpAgAY6B_8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAS TREATMENT APPARATUS</title><source>esp@cenet</source><creator>YOSHIMURA AKIHIRO ; NISHIMURA KAZUAKI ; ASAHI KENSHIRO ; HANDA TATSUYA ; SAEGUSA YUJI ; FURUSAWA MASAKI ; SASAHARA REIKO</creator><creatorcontrib>YOSHIMURA AKIHIRO ; NISHIMURA KAZUAKI ; ASAHI KENSHIRO ; HANDA TATSUYA ; SAEGUSA YUJI ; FURUSAWA MASAKI ; SASAHARA REIKO</creatorcontrib><description>To provide a gas treatment apparatus which can suppress occurrence of defects in a substrate due to particles in gas treatment using fluorine-containing gas and basic gas.SOLUTION: A gas treatment apparatus for subjecting a substrate to gas treatment has a chamber storing the substrate, a gas supply mechanism for individually supplying fluorine-containing gas and basic gas, and a gas introduction member for making the fluorine-containing gas and the basic gas supplied from the gas supply mechanism join each other, and introducing mixed gas obtained by mixing the fluorine-containing gas and the basic gas into the chamber, wherein a part including a confluent part of the fluorine-containing gas and the basic gas of the gas introduction member is composed of an aluminum-based material, and a resin coating is formed in a part including at least the confluent part.SELECTED DRAWING: Figure 1 【課題】フッ素含有ガスと塩基性ガスを用いるガス処理の際に、パーティクルにより基板に欠陥が生じることを抑制可能なガス処理装置を提供する。【解決手段】基板にガス処理を施すガス処理装置は、基板が収容されるチャンバーと、フッ素含有ガスと塩基性ガスとを個別に供給するガス供給機構と、ガス供給機構から供給されたフッ素含有ガスと塩基性ガスとを合流させ、フッ素含有ガスと塩基性ガスとが混合された混合ガスをチャンバーに導入するガス導入部材とを有し、ガス導入部材のフッ素含有ガスと塩基性ガスとの合流箇所を含む部分はアルミニウム系材料で構成されており、少なくとも、合流箇所を含む部分に樹脂コーティングが形成されている。【選択図】図1</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221003&amp;DB=EPODOC&amp;CC=JP&amp;NR=2022142996A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221003&amp;DB=EPODOC&amp;CC=JP&amp;NR=2022142996A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHIMURA AKIHIRO</creatorcontrib><creatorcontrib>NISHIMURA KAZUAKI</creatorcontrib><creatorcontrib>ASAHI KENSHIRO</creatorcontrib><creatorcontrib>HANDA TATSUYA</creatorcontrib><creatorcontrib>SAEGUSA YUJI</creatorcontrib><creatorcontrib>FURUSAWA MASAKI</creatorcontrib><creatorcontrib>SASAHARA REIKO</creatorcontrib><title>GAS TREATMENT APPARATUS</title><description>To provide a gas treatment apparatus which can suppress occurrence of defects in a substrate due to particles in gas treatment using fluorine-containing gas and basic gas.SOLUTION: A gas treatment apparatus for subjecting a substrate to gas treatment has a chamber storing the substrate, a gas supply mechanism for individually supplying fluorine-containing gas and basic gas, and a gas introduction member for making the fluorine-containing gas and the basic gas supplied from the gas supply mechanism join each other, and introducing mixed gas obtained by mixing the fluorine-containing gas and the basic gas into the chamber, wherein a part including a confluent part of the fluorine-containing gas and the basic gas of the gas introduction member is composed of an aluminum-based material, and a resin coating is formed in a part including at least the confluent part.SELECTED DRAWING: Figure 1 【課題】フッ素含有ガスと塩基性ガスを用いるガス処理の際に、パーティクルにより基板に欠陥が生じることを抑制可能なガス処理装置を提供する。【解決手段】基板にガス処理を施すガス処理装置は、基板が収容されるチャンバーと、フッ素含有ガスと塩基性ガスとを個別に供給するガス供給機構と、ガス供給機構から供給されたフッ素含有ガスと塩基性ガスとを合流させ、フッ素含有ガスと塩基性ガスとが混合された混合ガスをチャンバーに導入するガス導入部材とを有し、ガス導入部材のフッ素含有ガスと塩基性ガスとの合流箇所を含む部分はアルミニウム系材料で構成されており、少なくとも、合流箇所を含む部分に樹脂コーティングが形成されている。【選択図】図1</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB3dwxWCAlydQzxdfULUXAMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRkaGJkaWlmaOxkQpAgAY6B_8</recordid><startdate>20221003</startdate><enddate>20221003</enddate><creator>YOSHIMURA AKIHIRO</creator><creator>NISHIMURA KAZUAKI</creator><creator>ASAHI KENSHIRO</creator><creator>HANDA TATSUYA</creator><creator>SAEGUSA YUJI</creator><creator>FURUSAWA MASAKI</creator><creator>SASAHARA REIKO</creator><scope>EVB</scope></search><sort><creationdate>20221003</creationdate><title>GAS TREATMENT APPARATUS</title><author>YOSHIMURA AKIHIRO ; NISHIMURA KAZUAKI ; ASAHI KENSHIRO ; HANDA TATSUYA ; SAEGUSA YUJI ; FURUSAWA MASAKI ; SASAHARA REIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022142996A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHIMURA AKIHIRO</creatorcontrib><creatorcontrib>NISHIMURA KAZUAKI</creatorcontrib><creatorcontrib>ASAHI KENSHIRO</creatorcontrib><creatorcontrib>HANDA TATSUYA</creatorcontrib><creatorcontrib>SAEGUSA YUJI</creatorcontrib><creatorcontrib>FURUSAWA MASAKI</creatorcontrib><creatorcontrib>SASAHARA REIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHIMURA AKIHIRO</au><au>NISHIMURA KAZUAKI</au><au>ASAHI KENSHIRO</au><au>HANDA TATSUYA</au><au>SAEGUSA YUJI</au><au>FURUSAWA MASAKI</au><au>SASAHARA REIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS TREATMENT APPARATUS</title><date>2022-10-03</date><risdate>2022</risdate><abstract>To provide a gas treatment apparatus which can suppress occurrence of defects in a substrate due to particles in gas treatment using fluorine-containing gas and basic gas.SOLUTION: A gas treatment apparatus for subjecting a substrate to gas treatment has a chamber storing the substrate, a gas supply mechanism for individually supplying fluorine-containing gas and basic gas, and a gas introduction member for making the fluorine-containing gas and the basic gas supplied from the gas supply mechanism join each other, and introducing mixed gas obtained by mixing the fluorine-containing gas and the basic gas into the chamber, wherein a part including a confluent part of the fluorine-containing gas and the basic gas of the gas introduction member is composed of an aluminum-based material, and a resin coating is formed in a part including at least the confluent part.SELECTED DRAWING: Figure 1 【課題】フッ素含有ガスと塩基性ガスを用いるガス処理の際に、パーティクルにより基板に欠陥が生じることを抑制可能なガス処理装置を提供する。【解決手段】基板にガス処理を施すガス処理装置は、基板が収容されるチャンバーと、フッ素含有ガスと塩基性ガスとを個別に供給するガス供給機構と、ガス供給機構から供給されたフッ素含有ガスと塩基性ガスとを合流させ、フッ素含有ガスと塩基性ガスとが混合された混合ガスをチャンバーに導入するガス導入部材とを有し、ガス導入部材のフッ素含有ガスと塩基性ガスとの合流箇所を含む部分はアルミニウム系材料で構成されており、少なくとも、合流箇所を含む部分に樹脂コーティングが形成されている。【選択図】図1</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; jpn
recordid cdi_epo_espacenet_JP2022142996A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title GAS TREATMENT APPARATUS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T12%3A44%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YOSHIMURA%20AKIHIRO&rft.date=2022-10-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2022142996A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true