SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM
To increase a cleaning efficiency of an exhaust system.SOLUTION: A technique has: a processing container that processes a substrate; a support part that is provided in the processing container and supports a plurality of substrates on a flat surface; a first gas supply part that supplies a first gas...
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| creator | TAKASAKI TADASHI OHASHI TADASHI YANAGISAWA AKIHIKO MATSUI SHUN |
| description | To increase a cleaning efficiency of an exhaust system.SOLUTION: A technique has: a processing container that processes a substrate; a support part that is provided in the processing container and supports a plurality of substrates on a flat surface; a first gas supply part that supplies a first gas to a first domain set in the processing container; a second gas supply part that supplies a second gas to a second domain set in the processing container; an exhaust buffer structure part that is provided along an external periphery of the support part; a first gas exhaust part that is connected to the exhaust buffer structure part and is provided on a downstream of a flow of the first gas from the first gas supply part; a second gas exhaust part that is connected to the exhaust buffer structure part and is provided on the downstream of the flow of the second gas from the second gas supply part; and a third gas supply part that supplies a cleaning gas to the exhaust buffer structure part.SELECTED DRAWING: Figure 1
【課題】排気系のクリーニング効率を高める。【解決手段】基板を処理する処理容器と、処理容器の内部に設けられ複数の基板を平面上に支持する支持部と、処理容器内に設定された第一ドメインに第一ガスを供給する第一ガス供給部と、処理容器内に設定された第二ドメインに第二ガスを供給する第二ガス供給部と、支持部の外周に沿って設けられた排気バッファ構造部と、排気バッファ構造部に接続され第一ガス供給部からの第一ガスの流れの下流に設けられる第一ガス排気部と、排気バッファ構造部に接続され第二ガス供給部からの第二ガスの流れの下流に設けられる第二ガス排気部と、排気バッファ構造部にクリーニングガスを供給する第三ガス供給部と、を有する技術が提供される。【選択図】図１ |
| format | Patent |
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【課題】排気系のクリーニング効率を高める。【解決手段】基板を処理する処理容器と、処理容器の内部に設けられ複数の基板を平面上に支持する支持部と、処理容器内に設定された第一ドメインに第一ガスを供給する第一ガス供給部と、処理容器内に設定された第二ドメインに第二ガスを供給する第二ガス供給部と、支持部の外周に沿って設けられた排気バッファ構造部と、排気バッファ構造部に接続され第一ガス供給部からの第一ガスの流れの下流に設けられる第一ガス排気部と、排気バッファ構造部に接続され第二ガス供給部からの第二ガスの流れの下流に設けられる第二ガス排気部と、排気バッファ構造部にクリーニングガスを供給する第三ガス供給部と、を有する技術が提供される。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220915&DB=EPODOC&CC=JP&NR=2022134224A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220915&DB=EPODOC&CC=JP&NR=2022134224A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKASAKI TADASHI</creatorcontrib><creatorcontrib>OHASHI TADASHI</creatorcontrib><creatorcontrib>YANAGISAWA AKIHIKO</creatorcontrib><creatorcontrib>MATSUI SHUN</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM</title><description>To increase a cleaning efficiency of an exhaust system.SOLUTION: A technique has: a processing container that processes a substrate; a support part that is provided in the processing container and supports a plurality of substrates on a flat surface; a first gas supply part that supplies a first gas to a first domain set in the processing container; a second gas supply part that supplies a second gas to a second domain set in the processing container; an exhaust buffer structure part that is provided along an external periphery of the support part; a first gas exhaust part that is connected to the exhaust buffer structure part and is provided on a downstream of a flow of the first gas from the first gas supply part; a second gas exhaust part that is connected to the exhaust buffer structure part and is provided on the downstream of the flow of the second gas from the second gas supply part; and a third gas supply part that supplies a cleaning gas to the exhaust buffer structure part.SELECTED DRAWING: Figure 1
【課題】排気系のクリーニング効率を高める。【解決手段】基板を処理する処理容器と、処理容器の内部に設けられ複数の基板を平面上に支持する支持部と、処理容器内に設定された第一ドメインに第一ガスを供給する第一ガス供給部と、処理容器内に設定された第二ドメインに第二ガスを供給する第二ガス供給部と、支持部の外周に沿って設けられた排気バッファ構造部と、排気バッファ構造部に接続され第一ガス供給部からの第一ガスの流れの下流に設けられる第一ガス排気部と、排気バッファ構造部に接続され第二ガス供給部からの第二ガスの流れの下流に設けられる第二ガス排気部と、排気バッファ構造部にクリーニングガスを供給する第三ガス供給部と、を有する技術が提供される。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEsKwjAURTNxIOoeHo4raNoNPJOXNkI-5FNwVIrEkWih7h8tuABHF8453DW7xnyOKWAi8MEJilHbFtB7_LIcKzBos0KRcliEodQ5CU5BJKOFszKL5AJI6rWgCtDK5acNaLZsdR8fc9n9dsP2ipLoDmV6DWWexlt5lvdw8fzI-aluOG-w_iv6ALj5Mic</recordid><startdate>20220915</startdate><enddate>20220915</enddate><creator>TAKASAKI TADASHI</creator><creator>OHASHI TADASHI</creator><creator>YANAGISAWA AKIHIKO</creator><creator>MATSUI SHUN</creator><scope>EVB</scope></search><sort><creationdate>20220915</creationdate><title>SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM</title><author>TAKASAKI TADASHI ; OHASHI TADASHI ; YANAGISAWA AKIHIKO ; MATSUI SHUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022134224A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKASAKI TADASHI</creatorcontrib><creatorcontrib>OHASHI TADASHI</creatorcontrib><creatorcontrib>YANAGISAWA AKIHIKO</creatorcontrib><creatorcontrib>MATSUI SHUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKASAKI TADASHI</au><au>OHASHI TADASHI</au><au>YANAGISAWA AKIHIKO</au><au>MATSUI SHUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM</title><date>2022-09-15</date><risdate>2022</risdate><abstract>To increase a cleaning efficiency of an exhaust system.SOLUTION: A technique has: a processing container that processes a substrate; a support part that is provided in the processing container and supports a plurality of substrates on a flat surface; a first gas supply part that supplies a first gas to a first domain set in the processing container; a second gas supply part that supplies a second gas to a second domain set in the processing container; an exhaust buffer structure part that is provided along an external periphery of the support part; a first gas exhaust part that is connected to the exhaust buffer structure part and is provided on a downstream of a flow of the first gas from the first gas supply part; a second gas exhaust part that is connected to the exhaust buffer structure part and is provided on the downstream of the flow of the second gas from the second gas supply part; and a third gas supply part that supplies a cleaning gas to the exhaust buffer structure part.SELECTED DRAWING: Figure 1
【課題】排気系のクリーニング効率を高める。【解決手段】基板を処理する処理容器と、処理容器の内部に設けられ複数の基板を平面上に支持する支持部と、処理容器内に設定された第一ドメインに第一ガスを供給する第一ガス供給部と、処理容器内に設定された第二ドメインに第二ガスを供給する第二ガス供給部と、支持部の外周に沿って設けられた排気バッファ構造部と、排気バッファ構造部に接続され第一ガス供給部からの第一ガスの流れの下流に設けられる第一ガス排気部と、排気バッファ構造部に接続され第二ガス供給部からの第二ガスの流れの下流に設けられる第二ガス排気部と、排気バッファ構造部にクリーニングガスを供給する第三ガス供給部と、を有する技術が提供される。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM |
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