SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE
To provide a semiconductor device such as a heterojunction bipolar transistor which can proceed a manufacturing process at a relatively low process temperature of, for example, 1000°C or less even when it is difficult to make a p-type semiconductor even by adding Mg or the like to a base material an...
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| creator | MASE AKIRA NIKAI YUTAKA IIDA YUSUKE MIYOSHI MAKOTO |
| description | To provide a semiconductor device such as a heterojunction bipolar transistor which can proceed a manufacturing process at a relatively low process temperature of, for example, 1000°C or less even when it is difficult to make a p-type semiconductor even by adding Mg or the like to a base material and performing a heat treatment at about 1100°C.SOLUTION: In a semiconductor device having three or more terminal electrodes for controlling a current or voltage for main operation by a current or voltage for control, a semiconductor device 100 includes a multilayer structure 120 made of two or more kinds of materials in which layers laminated adjacent to each other have different lattice constants or forbidden band widths.SELECTED DRAWING: Figure 1
【課題】Ｍｇなどを基材に加えて１１００℃程度で熱処理をしても、ｐ型の半導体を作ることが困難であるに対し、例えば１０００℃以下の比較的低いプロセス温度を以て製造工程を進めていくことができる、ヘテロ接合バイポーラトランジスタのような半導体装置を提供すること。【解決手段】制御用の電流または電圧により、主動作用の電流または電圧を制御する３端子以上の電極を有する半導体装置において、隣接して積層する層同士がそれぞれ異なった格子定数または禁制帯幅を有する２種類以上の材料からなる多層構造１２０を含む、半導体装置１００である。【選択図】図１ |
| format | Patent |
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【課題】Ｍｇなどを基材に加えて１１００℃程度で熱処理をしても、ｐ型の半導体を作ることが困難であるに対し、例えば１０００℃以下の比較的低いプロセス温度を以て製造工程を進めていくことができる、ヘテロ接合バイポーラトランジスタのような半導体装置を提供すること。【解決手段】制御用の電流または電圧により、主動作用の電流または電圧を制御する３端子以上の電極を有する半導体装置において、隣接して積層する層同士がそれぞれ異なった格子定数または禁制帯幅を有する２種類以上の材料からなる多層構造１２０を含む、半導体装置１００である。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220905&DB=EPODOC&CC=JP&NR=2022128613A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220905&DB=EPODOC&CC=JP&NR=2022128613A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MASE AKIRA</creatorcontrib><creatorcontrib>NIKAI YUTAKA</creatorcontrib><creatorcontrib>IIDA YUSUKE</creatorcontrib><creatorcontrib>MIYOSHI MAKOTO</creatorcontrib><title>SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor device such as a heterojunction bipolar transistor which can proceed a manufacturing process at a relatively low process temperature of, for example, 1000°C or less even when it is difficult to make a p-type semiconductor even by adding Mg or the like to a base material and performing a heat treatment at about 1100°C.SOLUTION: In a semiconductor device having three or more terminal electrodes for controlling a current or voltage for main operation by a current or voltage for control, a semiconductor device 100 includes a multilayer structure 120 made of two or more kinds of materials in which layers laminated adjacent to each other have different lattice constants or forbidden band widths.SELECTED DRAWING: Figure 1
【課題】Ｍｇなどを基材に加えて１１００℃程度で熱処理をしても、ｐ型の半導体を作ることが困難であるに対し、例えば１０００℃以下の比較的低いプロセス温度を以て製造工程を進めていくことができる、ヘテロ接合バイポーラトランジスタのような半導体装置を提供すること。【解決手段】制御用の電流または電圧により、主動作用の電流または電圧を制御する３端子以上の電極を有する半導体装置において、隣接して積層する層同士がそれぞれ異なった格子定数または禁制帯幅を有する２種類以上の材料からなる多層構造１２０を含む、半導体装置１００である。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNRcA3wDHGM8HT0UQgOdQoOCXIMcVVwAyrBpoGHgTUtMac4lRdKczMoubmGOHvophbkx6cWFyQmp-allsR7BRgZGBkZGlmYGRo7GhOlCAD3mSys</recordid><startdate>20220905</startdate><enddate>20220905</enddate><creator>MASE AKIRA</creator><creator>NIKAI YUTAKA</creator><creator>IIDA YUSUKE</creator><creator>MIYOSHI MAKOTO</creator><scope>EVB</scope></search><sort><creationdate>20220905</creationdate><title>SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE</title><author>MASE AKIRA ; NIKAI YUTAKA ; IIDA YUSUKE ; MIYOSHI MAKOTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022128613A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MASE AKIRA</creatorcontrib><creatorcontrib>NIKAI YUTAKA</creatorcontrib><creatorcontrib>IIDA YUSUKE</creatorcontrib><creatorcontrib>MIYOSHI MAKOTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MASE AKIRA</au><au>NIKAI YUTAKA</au><au>IIDA YUSUKE</au><au>MIYOSHI MAKOTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE</title><date>2022-09-05</date><risdate>2022</risdate><abstract>To provide a semiconductor device such as a heterojunction bipolar transistor which can proceed a manufacturing process at a relatively low process temperature of, for example, 1000°C or less even when it is difficult to make a p-type semiconductor even by adding Mg or the like to a base material and performing a heat treatment at about 1100°C.SOLUTION: In a semiconductor device having three or more terminal electrodes for controlling a current or voltage for main operation by a current or voltage for control, a semiconductor device 100 includes a multilayer structure 120 made of two or more kinds of materials in which layers laminated adjacent to each other have different lattice constants or forbidden band widths.SELECTED DRAWING: Figure 1
【課題】Ｍｇなどを基材に加えて１１００℃程度で熱処理をしても、ｐ型の半導体を作ることが困難であるに対し、例えば１０００℃以下の比較的低いプロセス温度を以て製造工程を進めていくことができる、ヘテロ接合バイポーラトランジスタのような半導体装置を提供すること。【解決手段】制御用の電流または電圧により、主動作用の電流または電圧を制御する３端子以上の電極を有する半導体装置において、隣接して積層する層同士がそれぞれ異なった格子定数または禁制帯幅を有する２種類以上の材料からなる多層構造１２０を含む、半導体装置１００である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE |
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