LIGHT EMITTING DEVICE

To provide a light emitting device capable of suppressing a decrease in quantity of light due to an adhesive, the light being extracted from an emission surface.SOLUTION: A light emitting device of the present invention includes: a substrate; a light emitting element having a supporting substrate disposed on the substrate and a semiconductor light emitting layer formed on the top face of the supporting substrate; a wavelength conversion structure comprising a wavelength conversion part disposed on the top face of the light emitting element via a light-transmitting adhesive resin layer and a light-transmitting part extending upward from around the bottom face of the wavelength conversion part and comprising a light-transmitting member surrounding the wavelength conversion part; and a light reflector covering the side faces of the light emitting element and the wavelength conversion structure. The edge of the semiconductor light emitting layer is located inside the periphery of the top face of the supporting substrate, and the edge of the bottom face of the wavelength conversion structure is located outside the edge of the semiconductor light emitting layer.SELECTED DRAWING: Figure 1 【課題】接着剤による出射面から取り出される光量の低下を抑えることが可能な発光装置を提供する。【解決手段】本発明の発光装置は、基板と、前記基板上に配された支持基板及び前記支持基板の上面に形成された半導体発光層を有する発光素子と、前記発光素子の上面上に透光性の接着樹脂層を介して配された、波長変換部と、前記波長変換部の底面の周囲から上方に延在し前記波長変換部を囲む透光性部材からなる透光部と、からなる波長変換構造体と、前記発光素子及び前記波長変換構造体の側面を被覆する光反射体と、を有し、前記半導体発光層の端部は、前記支持基板の上面の周縁より内側に位置し、前記波長変換構造体の底面の端部は、前記半導体発光層の端部よりも外側に位置する。【選択図】図１