SILICON CARBIDE SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD FOR INSPECTING SILICON CARBIDE SEMICONDUCTOR DEVICE
To provide a silicon carbide semiconductor device, a semiconductor package, and a method for inspecting a silicon carbide semiconductor device, capable of suppressing adverse effects on device characteristics due to probe marks.SOLUTION: In a silicon carbide semiconductor device 3, there are provide...
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| creator | UCHIUMI MAKOTO MIYASATO MAKI |
| description | To provide a silicon carbide semiconductor device, a semiconductor package, and a method for inspecting a silicon carbide semiconductor device, capable of suppressing adverse effects on device characteristics due to probe marks.SOLUTION: In a silicon carbide semiconductor device 3, there are provided a wiring area 21a where a wiring member for a package is bonded and a probe area 21b that is a portion excluding the wiring area 21a, at a portion exposed to an opening 21 of a passivation film of a source pad 11. A probe is pressed only against the probe area 21b of the source pad 11 and a probe mark 31 is generated. The number of probes is set such that the number of probe marks 31 generated in the probe area 21b of the source pad 11 is more than, for example, 2/A per unit current based on the rated current of the silicon carbide semiconductor device.SELECTED DRAWING: Figure 1
【課題】プローブ痕による素子特性への悪影響を抑制することができる炭化珪素半導体装置、半導体パッケージおよび炭化珪素半導体装置の検査方法を提供すること。【解決手段】ソースパッド１１の、パッシベーション膜の開口部２１に露出された部分に、パッケージ用の配線部材がボンディングされる配線領域２１ａと、配線領域２１ａを除く部分であるプローブ領域２１ｂと、が設けられている。ソースパッド１１のプローブ領域２１ｂのみに、プローブが押し当てられてプローブ痕３１が生じる。ソースパッド１１のプローブ領域２１ｂに生じるプローブ痕３１の個数が炭化珪素半導体装置３の定格電流を基準として単位電流あたりに例えば２個／Ａよりも多くなるように、プローブの本数が設定される。【選択図】図１ |
| format | Patent |
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【課題】プローブ痕による素子特性への悪影響を抑制することができる炭化珪素半導体装置、半導体パッケージおよび炭化珪素半導体装置の検査方法を提供すること。【解決手段】ソースパッド１１の、パッシベーション膜の開口部２１に露出された部分に、パッケージ用の配線部材がボンディングされる配線領域２１ａと、配線領域２１ａを除く部分であるプローブ領域２１ｂと、が設けられている。ソースパッド１１のプローブ領域２１ｂのみに、プローブが押し当てられてプローブ痕３１が生じる。ソースパッド１１のプローブ領域２１ｂに生じるプローブ痕３１の個数が炭化珪素半導体装置３の定格電流を基準として単位電流あたりに例えば２個／Ａよりも多くなるように、プローブの本数が設定される。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220603&DB=EPODOC&CC=JP&NR=2022082847A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220603&DB=EPODOC&CC=JP&NR=2022082847A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UCHIUMI MAKOTO</creatorcontrib><creatorcontrib>MIYASATO MAKI</creatorcontrib><title>SILICON CARBIDE SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD FOR INSPECTING SILICON CARBIDE SEMICONDUCTOR DEVICE</title><description>To provide a silicon carbide semiconductor device, a semiconductor package, and a method for inspecting a silicon carbide semiconductor device, capable of suppressing adverse effects on device characteristics due to probe marks.SOLUTION: In a silicon carbide semiconductor device 3, there are provided a wiring area 21a where a wiring member for a package is bonded and a probe area 21b that is a portion excluding the wiring area 21a, at a portion exposed to an opening 21 of a passivation film of a source pad 11. A probe is pressed only against the probe area 21b of the source pad 11 and a probe mark 31 is generated. The number of probes is set such that the number of probe marks 31 generated in the probe area 21b of the source pad 11 is more than, for example, 2/A per unit current based on the rated current of the silicon carbide semiconductor device.SELECTED DRAWING: Figure 1
【課題】プローブ痕による素子特性への悪影響を抑制することができる炭化珪素半導体装置、半導体パッケージおよび炭化珪素半導体装置の検査方法を提供すること。【解決手段】ソースパッド１１の、パッシベーション膜の開口部２１に露出された部分に、パッケージ用の配線部材がボンディングされる配線領域２１ａと、配線領域２１ａを除く部分であるプローブ領域２１ｂと、が設けられている。ソースパッド１１のプローブ領域２１ｂのみに、プローブが押し当てられてプローブ痕３１が生じる。ソースパッド１１のプローブ領域２１ｂに生じるプローブ痕３１の個数が炭化珪素半導体装置３の定格電流を基準として単位電流あたりに例えば２個／Ａよりも多くなるように、プローブの本数が設定される。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZKgO9vTxdPb3U3B2DHLydHFVCHb1BfFdQp1D_IMUXFzDPJ1dddBEAxydvR3dgcKOfi4Kvq4hHv4uCm5AcU-_4ABX5xBPP3cFYozlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkZGBhZGFibmjsZEKQIApNI7Ig</recordid><startdate>20220603</startdate><enddate>20220603</enddate><creator>UCHIUMI MAKOTO</creator><creator>MIYASATO MAKI</creator><scope>EVB</scope></search><sort><creationdate>20220603</creationdate><title>SILICON CARBIDE SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD FOR INSPECTING SILICON CARBIDE SEMICONDUCTOR DEVICE</title><author>UCHIUMI MAKOTO ; MIYASATO MAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022082847A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>UCHIUMI MAKOTO</creatorcontrib><creatorcontrib>MIYASATO MAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UCHIUMI MAKOTO</au><au>MIYASATO MAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICON CARBIDE SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD FOR INSPECTING SILICON CARBIDE SEMICONDUCTOR DEVICE</title><date>2022-06-03</date><risdate>2022</risdate><abstract>To provide a silicon carbide semiconductor device, a semiconductor package, and a method for inspecting a silicon carbide semiconductor device, capable of suppressing adverse effects on device characteristics due to probe marks.SOLUTION: In a silicon carbide semiconductor device 3, there are provided a wiring area 21a where a wiring member for a package is bonded and a probe area 21b that is a portion excluding the wiring area 21a, at a portion exposed to an opening 21 of a passivation film of a source pad 11. A probe is pressed only against the probe area 21b of the source pad 11 and a probe mark 31 is generated. The number of probes is set such that the number of probe marks 31 generated in the probe area 21b of the source pad 11 is more than, for example, 2/A per unit current based on the rated current of the silicon carbide semiconductor device.SELECTED DRAWING: Figure 1
【課題】プローブ痕による素子特性への悪影響を抑制することができる炭化珪素半導体装置、半導体パッケージおよび炭化珪素半導体装置の検査方法を提供すること。【解決手段】ソースパッド１１の、パッシベーション膜の開口部２１に露出された部分に、パッケージ用の配線部材がボンディングされる配線領域２１ａと、配線領域２１ａを除く部分であるプローブ領域２１ｂと、が設けられている。ソースパッド１１のプローブ領域２１ｂのみに、プローブが押し当てられてプローブ痕３１が生じる。ソースパッド１１のプローブ領域２１ｂに生じるプローブ痕３１の個数が炭化珪素半導体装置３の定格電流を基準として単位電流あたりに例えば２個／Ａよりも多くなるように、プローブの本数が設定される。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | SILICON CARBIDE SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD FOR INSPECTING SILICON CARBIDE SEMICONDUCTOR DEVICE |
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