SUBSTRATE PROCESSING APPARATUS AND OPERATION METHOD FOR SUBSTRATE PROCESSING APPARATUS

To provide a substrate processing apparatus and an operation method for the substrate processing apparatus, where the substrate processing apparatus is capable of removing a fluorine/silicon-containing substance deposited on an inner wall of a chamber.SOLUTION: Provided in one embodiment is a method...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG BONG JU, KANG KYU WAN, YANG SEUNG KOOK
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a substrate processing apparatus and an operation method for the substrate processing apparatus, where the substrate processing apparatus is capable of removing a fluorine/silicon-containing substance deposited on an inner wall of a chamber.SOLUTION: Provided in one embodiment is a method for operating a substrate processing apparatus comprising: a chamber in which a fluorine/silicon-containing substance is deposited on an inner wall through an oxide film removal process for a substrate placed therein; and an antenna installed outside the chamber and supplied with RF power. The method comprises thermally decomposing the fluorine/silicon-containing substance through heating the inner wall of the chamber to 75°C or more by supplying an inert gas into the chamber and supplying RF power to the antenna.SELECTED DRAWING: Figure 1 【課題】チャンバの内壁に蒸着されたフッ素/シリコン含有物質を除去することができる基板処理装置及び基板処理装置の運用方法を提供する。【解決手段】本発明の一実施例によると，内部に置かれた基板の酸化膜除去工程により，内壁にフッ素/シリコン含有物質が蒸着されたチャンバと，前記チャンバの外側に設置されてＲＦパワーが供給されているアンテナを含む基板処理装置を運用する方法であって，前記チャンバの内壁を７５℃以上になるように前記チャンバの内部に不活性ガスを供給して前記アンテナＲＦ電力を供給して前記フッ素/シリコン含有物質を熱分解する。【選択図】図１