MEMORY ARRAY, MEMORY DEVICE, AND FORMATION METHOD FOR THE SAME

To provide a wiring arrangement for a 3D memory array, and a formation method for the same.SOLUTION: A memory array 200 includes a first word line (conductive line 72) extending from a first edge of the memory array in a first direction and having a length smaller than the length of a second edge of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG SHENG ZHEN, LIN MENG HAN, LIN CHUNG-TE, LIN YOU MING, JIA HAN ZHONG, YANG FENG CHENG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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