POLISHING METHOD, POLISHING DEVICE, AND COMPUTER READABLE RECORDING MEDIUM RECORDING PROGRAM
To provide a polishing method capable of measuring film thickness of a substrate such as a semiconductor wafer having various structural elements thereon with high accuracy.SOLUTION: A polishing method generates a plurality of spectra of reflecting light from a plurality of measurement points on a s...
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| creator | NACHIKETA CHAUHAN YAGI KEITA SHIOKAWA YOICHI WATANABE YUKI |
| description | To provide a polishing method capable of measuring film thickness of a substrate such as a semiconductor wafer having various structural elements thereon with high accuracy.SOLUTION: A polishing method generates a plurality of spectra of reflecting light from a plurality of measurement points on a substrate W, classifies the plurality of spectra into a plurality of primary spectra belonging to a first group and a second spectrum belonging to a second group on the basis of shapes of each of the spectra, determines the plurality of film thicknesses of the substrate W from the plurality of primary spectra, and determines a film thickness at a measurement point corresponding to the second spectrum using the primary spectra or the plurality of film thicknesses.SELECTED DRAWING: Figure 9
【課題】様々な構造要素を表面に有する半導体ウェーハなどの基板の膜厚を高い精度で測定することができる研磨方法を提供する。【解決手段】研磨方法は、基板Ｗ上の複数の測定点からの反射光の複数のスペクトルを生成し、複数のスペクトルを、各スペクトルの形状に基づいて第１グループに属する複数の一次スペクトルと、第２グループに属する二次スペクトルに分類し、複数の一次スペクトルから、基板Ｗの複数の膜厚を決定し、一次スペクトルまたは複数の膜厚を用いて、二次スペクトルに対応する測定点での膜厚を決定する。【選択図】図９ |
| format | Patent |
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【課題】様々な構造要素を表面に有する半導体ウェーハなどの基板の膜厚を高い精度で測定することができる研磨方法を提供する。【解決手段】研磨方法は、基板Ｗ上の複数の測定点からの反射光の複数のスペクトルを生成し、複数のスペクトルを、各スペクトルの形状に基づいて第１グループに属する複数の一次スペクトルと、第２グループに属する二次スペクトルに分類し、複数の一次スペクトルから、基板Ｗの複数の膜厚を決定し、一次スペクトルまたは複数の膜厚を用いて、二次スペクトルに対応する測定点での膜厚を決定する。【選択図】図９</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220117&DB=EPODOC&CC=JP&NR=2022010553A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220117&DB=EPODOC&CC=JP&NR=2022010553A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NACHIKETA CHAUHAN</creatorcontrib><creatorcontrib>YAGI KEITA</creatorcontrib><creatorcontrib>SHIOKAWA YOICHI</creatorcontrib><creatorcontrib>WATANABE YUKI</creatorcontrib><title>POLISHING METHOD, POLISHING DEVICE, AND COMPUTER READABLE RECORDING MEDIUM RECORDING PROGRAM</title><description>To provide a polishing method capable of measuring film thickness of a substrate such as a semiconductor wafer having various structural elements thereon with high accuracy.SOLUTION: A polishing method generates a plurality of spectra of reflecting light from a plurality of measurement points on a substrate W, classifies the plurality of spectra into a plurality of primary spectra belonging to a first group and a second spectrum belonging to a second group on the basis of shapes of each of the spectra, determines the plurality of film thicknesses of the substrate W from the plurality of primary spectra, and determines a film thickness at a measurement point corresponding to the second spectrum using the primary spectra or the plurality of film thicknesses.SELECTED DRAWING: Figure 9
【課題】様々な構造要素を表面に有する半導体ウェーハなどの基板の膜厚を高い精度で測定することができる研磨方法を提供する。【解決手段】研磨方法は、基板Ｗ上の複数の測定点からの反射光の複数のスペクトルを生成し、複数のスペクトルを、各スペクトルの形状に基づいて第１グループに属する複数の一次スペクトルと、第２グループに属する二次スペクトルに分類し、複数の一次スペクトルから、基板Ｗの複数の膜厚を決定し、一次スペクトルまたは複数の膜厚を用いて、二次スペクトルに対応する測定点での膜厚を決定する。【選択図】図９</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgJ8PfxDPbw9HNX8HUN8fB30VFAiLi4hnk6u-ooOPq5KDj7-waEhrgGKQS5Oro4Ovm4AhnO_kEuEJ0unqG-SAIBQf7uQY6-PAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDIyMDQwNTU2NGYKEUAALkyhw</recordid><startdate>20220117</startdate><enddate>20220117</enddate><creator>NACHIKETA CHAUHAN</creator><creator>YAGI KEITA</creator><creator>SHIOKAWA YOICHI</creator><creator>WATANABE YUKI</creator><scope>EVB</scope></search><sort><creationdate>20220117</creationdate><title>POLISHING METHOD, POLISHING DEVICE, AND COMPUTER READABLE RECORDING MEDIUM RECORDING PROGRAM</title><author>NACHIKETA CHAUHAN ; YAGI KEITA ; SHIOKAWA YOICHI ; WATANABE YUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022010553A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NACHIKETA CHAUHAN</creatorcontrib><creatorcontrib>YAGI KEITA</creatorcontrib><creatorcontrib>SHIOKAWA YOICHI</creatorcontrib><creatorcontrib>WATANABE YUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NACHIKETA CHAUHAN</au><au>YAGI KEITA</au><au>SHIOKAWA YOICHI</au><au>WATANABE YUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLISHING METHOD, POLISHING DEVICE, AND COMPUTER READABLE RECORDING MEDIUM RECORDING PROGRAM</title><date>2022-01-17</date><risdate>2022</risdate><abstract>To provide a polishing method capable of measuring film thickness of a substrate such as a semiconductor wafer having various structural elements thereon with high accuracy.SOLUTION: A polishing method generates a plurality of spectra of reflecting light from a plurality of measurement points on a substrate W, classifies the plurality of spectra into a plurality of primary spectra belonging to a first group and a second spectrum belonging to a second group on the basis of shapes of each of the spectra, determines the plurality of film thicknesses of the substrate W from the plurality of primary spectra, and determines a film thickness at a measurement point corresponding to the second spectrum using the primary spectra or the plurality of film thicknesses.SELECTED DRAWING: Figure 9
【課題】様々な構造要素を表面に有する半導体ウェーハなどの基板の膜厚を高い精度で測定することができる研磨方法を提供する。【解決手段】研磨方法は、基板Ｗ上の複数の測定点からの反射光の複数のスペクトルを生成し、複数のスペクトルを、各スペクトルの形状に基づいて第１グループに属する複数の一次スペクトルと、第２グループに属する二次スペクトルに分類し、複数の一次スペクトルから、基板Ｗの複数の膜厚を決定し、一次スペクトルまたは複数の膜厚を用いて、二次スペクトルに対応する測定点での膜厚を決定する。【選択図】図９</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | POLISHING METHOD, POLISHING DEVICE, AND COMPUTER READABLE RECORDING MEDIUM RECORDING PROGRAM |
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