METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT
To provide a method for manufacturing a surface acoustic wave element that can form a silicon-containing layer with excellent flatness on a substrate with an IDT electrode formed thereon, and a silicon-containing composition used for the method.SOLUTION: A method for manufacturing a surface acoustic...
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| creator | SEKO TOMOAKI SAKAI TATSUYA KASAI TATSUYA |
| description | To provide a method for manufacturing a surface acoustic wave element that can form a silicon-containing layer with excellent flatness on a substrate with an IDT electrode formed thereon, and a silicon-containing composition used for the method.SOLUTION: A method for manufacturing a surface acoustic wave element includes the steps of: applying a silicon-containing composition on a substrate 1 with an IDT electrode formed thereon, thereby forming a silicon-containing layer 3; and heating the silicon-containing layer.EFFECT: Since the applied silicon-containing composition can form such a silicon-containing layer as a silicon oxide film through a condensation reaction, an obtained silicon-containing layer can have excellent flatness. Also, using such a silicon-containing layer with the excellent flatness brings advantages to the manufacturing cost or to the steps caused by a planarization process in a CMP technique, for example.SELECTED DRAWING: Figure 1
【課題】ＩＤＴ電極が形成された基板に平坦性に優れたケイ素含有層の形成が可能な弾性表面波素子の製造方法及びそれに用いれられるケイ素含有組成物を提供する。【解決手段】弾性表面波素子の製造方法は、ＩＤＴ電極が形成された基板１に、ケイ素含有組成物を塗工して、ケイ素含有層３を形成する工程と、更にケイ素含有層を加熱する工程と、を含む。【効果】塗工されたケイ素含有組成物が縮合反応等を介して酸化ケイ素膜等のケイ素含有層を形成することが可能となり、得られたケイ素含有層は平坦性に優れたものとなる。さらに、平坦性に優れたケイ素含有層を介することにより、ＣＭＰ等の平坦化工程に起因する製造コストや工程面でも有利となる。【選択図】図１ |
| format | Patent |
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【課題】ＩＤＴ電極が形成された基板に平坦性に優れたケイ素含有層の形成が可能な弾性表面波素子の製造方法及びそれに用いれられるケイ素含有組成物を提供する。【解決手段】弾性表面波素子の製造方法は、ＩＤＴ電極が形成された基板１に、ケイ素含有組成物を塗工して、ケイ素含有層３を形成する工程と、更にケイ素含有層を加熱する工程と、を含む。【効果】塗工されたケイ素含有組成物が縮合反応等を介して酸化ケイ素膜等のケイ素含有層を形成することが可能となり、得られたケイ素含有層は平坦性に優れたものとなる。さらに、平坦性に優れたケイ素含有層を介することにより、ＣＭＰ等の平坦化工程に起因する製造コストや工程面でも有利となる。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211202&DB=EPODOC&CC=JP&NR=2021184551A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211202&DB=EPODOC&CC=JP&NR=2021184551A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEKO TOMOAKI</creatorcontrib><creatorcontrib>SAKAI TATSUYA</creatorcontrib><creatorcontrib>KASAI TATSUYA</creatorcontrib><title>METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT</title><description>To provide a method for manufacturing a surface acoustic wave element that can form a silicon-containing layer with excellent flatness on a substrate with an IDT electrode formed thereon, and a silicon-containing composition used for the method.SOLUTION: A method for manufacturing a surface acoustic wave element includes the steps of: applying a silicon-containing composition on a substrate 1 with an IDT electrode formed thereon, thereby forming a silicon-containing layer 3; and heating the silicon-containing layer.EFFECT: Since the applied silicon-containing composition can form such a silicon-containing layer as a silicon oxide film through a condensation reaction, an obtained silicon-containing layer can have excellent flatness. Also, using such a silicon-containing layer with the excellent flatness brings advantages to the manufacturing cost or to the steps caused by a planarization process in a CMP technique, for example.SELECTED DRAWING: Figure 1
【課題】ＩＤＴ電極が形成された基板に平坦性に優れたケイ素含有層の形成が可能な弾性表面波素子の製造方法及びそれに用いれられるケイ素含有組成物を提供する。【解決手段】弾性表面波素子の製造方法は、ＩＤＴ電極が形成された基板１に、ケイ素含有組成物を塗工して、ケイ素含有層３を形成する工程と、更にケイ素含有層を加熱する工程と、を含む。【効果】塗工されたケイ素含有組成物が縮合反応等を介して酸化ケイ素膜等のケイ素含有層を形成することが可能となり、得られたケイ素含有層は平坦性に優れたものとなる。さらに、平坦性に優れたケイ素含有層を介することにより、ＣＭＰ等の平坦化工程に起因する製造コストや工程面でも有利となる。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDzdQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCA4NAnJcFRyd_UODQzydFcIdw1wVXH1cfV39QngYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBkaGhhYmpqaGjMVGKAGraKGg</recordid><startdate>20211202</startdate><enddate>20211202</enddate><creator>SEKO TOMOAKI</creator><creator>SAKAI TATSUYA</creator><creator>KASAI TATSUYA</creator><scope>EVB</scope></search><sort><creationdate>20211202</creationdate><title>METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT</title><author>SEKO TOMOAKI ; SAKAI TATSUYA ; KASAI TATSUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021184551A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SEKO TOMOAKI</creatorcontrib><creatorcontrib>SAKAI TATSUYA</creatorcontrib><creatorcontrib>KASAI TATSUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEKO TOMOAKI</au><au>SAKAI TATSUYA</au><au>KASAI TATSUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT</title><date>2021-12-02</date><risdate>2021</risdate><abstract>To provide a method for manufacturing a surface acoustic wave element that can form a silicon-containing layer with excellent flatness on a substrate with an IDT electrode formed thereon, and a silicon-containing composition used for the method.SOLUTION: A method for manufacturing a surface acoustic wave element includes the steps of: applying a silicon-containing composition on a substrate 1 with an IDT electrode formed thereon, thereby forming a silicon-containing layer 3; and heating the silicon-containing layer.EFFECT: Since the applied silicon-containing composition can form such a silicon-containing layer as a silicon oxide film through a condensation reaction, an obtained silicon-containing layer can have excellent flatness. Also, using such a silicon-containing layer with the excellent flatness brings advantages to the manufacturing cost or to the steps caused by a planarization process in a CMP technique, for example.SELECTED DRAWING: Figure 1
【課題】ＩＤＴ電極が形成された基板に平坦性に優れたケイ素含有層の形成が可能な弾性表面波素子の製造方法及びそれに用いれられるケイ素含有組成物を提供する。【解決手段】弾性表面波素子の製造方法は、ＩＤＴ電極が形成された基板１に、ケイ素含有組成物を塗工して、ケイ素含有層３を形成する工程と、更にケイ素含有層を加熱する工程と、を含む。【効果】塗工されたケイ素含有組成物が縮合反応等を介して酸化ケイ素膜等のケイ素含有層を形成することが可能となり、得られたケイ素含有層は平坦性に優れたものとなる。さらに、平坦性に優れたケイ素含有層を介することにより、ＣＭＰ等の平坦化工程に起因する製造コストや工程面でも有利となる。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| title | METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT |
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