OVERLAY MONITORING
To provide a method for overlay monitoring.SOLUTION: A method includes: obtaining a secondary electron image and a backscattered electron image of an area of a substrate 201, which includes a first array of first structure elements 301 that can be repeated and are positioned on a surface of the subs...
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| creator | VLADISLAV KAPLAN KEVIN RYAN HOUCHENS SHAY ATTAL LAVI JACOV SHACHAR |
| description | To provide a method for overlay monitoring.SOLUTION: A method includes: obtaining a secondary electron image and a backscattered electron image of an area of a substrate 201, which includes a first array of first structure elements 301 that can be repeated and are positioned on a surface of the substrate and a second array of second structure elements 302 that can be repeated and are positioned below the first array and below the surface of the substrate; determining positions of the first structure elements within the secondary electron image; defining regions of interest in the backscattered electron image on the basis of the positions of the first structure elements; processing pixels of the backscattered electron image that are positioned within the regions of interest to provide a backscattered electron representation of a second structure element; and calculating an overlay error on the basis of position information on the second structure element within the backscattered electron representation of the second structure element and position information on at least one first structure element in the secondary electron image.SELECTED DRAWING: Figure 2
【課題】オーバーレイモニタリングのための方法を提供する。【解決手段】基板２０１の区域の二次電子像および後方散乱電子像を得ることであり、反復可能であり、基板の表面に位置づけられた第１の構造要素３０１の第１のアレイ、および反復可能であり、第１のアレイの下で、基板の表面の下に位置づけられた第２の構造要素３０２の第２のアレイが含まれる、得ることと、二次電子像内の第１の構造要素の位置を決定することと、第１の構造要素の位置に基づいて、後方散乱電子像における関心領域を画定することと、第２の構造要素の後方散乱電子表示を提供するために、関心領域内に位置する後方散乱電子像のピクセルを処理することと、第２の構造要素の後方散乱電子表示内の第２の構造要素に関する位置情報、および二次電子像における少なくとも１つの第１の構造要素に関する位置情報に基づいてオーバーレイエラーを計算することとを含む。【選択図】図２ |
| format | Patent |
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【課題】オーバーレイモニタリングのための方法を提供する。【解決手段】基板２０１の区域の二次電子像および後方散乱電子像を得ることであり、反復可能であり、基板の表面に位置づけられた第１の構造要素３０１の第１のアレイ、および反復可能であり、第１のアレイの下で、基板の表面の下に位置づけられた第２の構造要素３０２の第２のアレイが含まれる、得ることと、二次電子像内の第１の構造要素の位置を決定することと、第１の構造要素の位置に基づいて、後方散乱電子像における関心領域を画定することと、第２の構造要素の後方散乱電子表示を提供するために、関心領域内に位置する後方散乱電子像のピクセルを処理することと、第２の構造要素の後方散乱電子表示内の第２の構造要素に関する位置情報、および二次電子像における少なくとも１つの第１の構造要素に関する位置情報に基づいてオーバーレイエラーを計算することとを含む。【選択図】図２</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211101&DB=EPODOC&CC=JP&NR=2021173759A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211101&DB=EPODOC&CC=JP&NR=2021173759A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VLADISLAV KAPLAN</creatorcontrib><creatorcontrib>KEVIN RYAN HOUCHENS</creatorcontrib><creatorcontrib>SHAY ATTAL</creatorcontrib><creatorcontrib>LAVI JACOV SHACHAR</creatorcontrib><title>OVERLAY MONITORING</title><description>To provide a method for overlay monitoring.SOLUTION: A method includes: obtaining a secondary electron image and a backscattered electron image of an area of a substrate 201, which includes a first array of first structure elements 301 that can be repeated and are positioned on a surface of the substrate and a second array of second structure elements 302 that can be repeated and are positioned below the first array and below the surface of the substrate; determining positions of the first structure elements within the secondary electron image; defining regions of interest in the backscattered electron image on the basis of the positions of the first structure elements; processing pixels of the backscattered electron image that are positioned within the regions of interest to provide a backscattered electron representation of a second structure element; and calculating an overlay error on the basis of position information on the second structure element within the backscattered electron representation of the second structure element and position information on at least one first structure element in the secondary electron image.SELECTED DRAWING: Figure 2
【課題】オーバーレイモニタリングのための方法を提供する。【解決手段】基板２０１の区域の二次電子像および後方散乱電子像を得ることであり、反復可能であり、基板の表面に位置づけられた第１の構造要素３０１の第１のアレイ、および反復可能であり、第１のアレイの下で、基板の表面の下に位置づけられた第２の構造要素３０２の第２のアレイが含まれる、得ることと、二次電子像内の第１の構造要素の位置を決定することと、第１の構造要素の位置に基づいて、後方散乱電子像における関心領域を画定することと、第２の構造要素の後方散乱電子表示を提供するために、関心領域内に位置する後方散乱電子像のピクセルを処理することと、第２の構造要素の後方散乱電子表示内の第２の構造要素に関する位置情報、および二次電子像における少なくとも１つの第１の構造要素に関する位置情報に基づいてオーバーレイエラーを計算することとを含む。【選択図】図２</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDyD3MN8nGMVPD19_MM8Q_y9HPnYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkaGhubG5qaWjsZEKQIAjmEevw</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>VLADISLAV KAPLAN</creator><creator>KEVIN RYAN HOUCHENS</creator><creator>SHAY ATTAL</creator><creator>LAVI JACOV SHACHAR</creator><scope>EVB</scope></search><sort><creationdate>20211101</creationdate><title>OVERLAY MONITORING</title><author>VLADISLAV KAPLAN ; KEVIN RYAN HOUCHENS ; SHAY ATTAL ; LAVI JACOV SHACHAR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021173759A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>VLADISLAV KAPLAN</creatorcontrib><creatorcontrib>KEVIN RYAN HOUCHENS</creatorcontrib><creatorcontrib>SHAY ATTAL</creatorcontrib><creatorcontrib>LAVI JACOV SHACHAR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VLADISLAV KAPLAN</au><au>KEVIN RYAN HOUCHENS</au><au>SHAY ATTAL</au><au>LAVI JACOV SHACHAR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OVERLAY MONITORING</title><date>2021-11-01</date><risdate>2021</risdate><abstract>To provide a method for overlay monitoring.SOLUTION: A method includes: obtaining a secondary electron image and a backscattered electron image of an area of a substrate 201, which includes a first array of first structure elements 301 that can be repeated and are positioned on a surface of the substrate and a second array of second structure elements 302 that can be repeated and are positioned below the first array and below the surface of the substrate; determining positions of the first structure elements within the secondary electron image; defining regions of interest in the backscattered electron image on the basis of the positions of the first structure elements; processing pixels of the backscattered electron image that are positioned within the regions of interest to provide a backscattered electron representation of a second structure element; and calculating an overlay error on the basis of position information on the second structure element within the backscattered electron representation of the second structure element and position information on at least one first structure element in the secondary electron image.SELECTED DRAWING: Figure 2
【課題】オーバーレイモニタリングのための方法を提供する。【解決手段】基板２０１の区域の二次電子像および後方散乱電子像を得ることであり、反復可能であり、基板の表面に位置づけられた第１の構造要素３０１の第１のアレイ、および反復可能であり、第１のアレイの下で、基板の表面の下に位置づけられた第２の構造要素３０２の第２のアレイが含まれる、得ることと、二次電子像内の第１の構造要素の位置を決定することと、第１の構造要素の位置に基づいて、後方散乱電子像における関心領域を画定することと、第２の構造要素の後方散乱電子表示を提供するために、関心領域内に位置する後方散乱電子像のピクセルを処理することと、第２の構造要素の後方散乱電子表示内の第２の構造要素に関する位置情報、および二次電子像における少なくとも１つの第１の構造要素に関する位置情報に基づいてオーバーレイエラーを計算することとを含む。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | OVERLAY MONITORING |
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