REFLECTION TYPE SENSOR

To provide a reflection type sensor in which it is possible to suppress a change in sensor output that corresponds to the distance to a measurement object.SOLUTION: Provided is a reflection type sensor for irradiating a measurement object with irradiation light and receiving reflected light from the...

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description To provide a reflection type sensor in which it is possible to suppress a change in sensor output that corresponds to the distance to a measurement object.SOLUTION: Provided is a reflection type sensor for irradiating a measurement object with irradiation light and receiving reflected light from the measurement object. The reflection type sensor comprises: a substrate 110; a light-emitting element 140 for radiating irradiation light; a first light-receiving element 151 for receiving an S-wave component of the reflected light and a second light-receiving element 152 for receiving a P-wave component of the reflected light; a lens; and a shading wall 170. The shading wall 170 blocks a portion of the reflected light and limits a first reflection region where the reflected light can enter the first light-receiving element 151 and a second reflection region where the reflected light can enter the second light-receiving element 152, and ratios of the first and second reflection regions to the irradiation region of the measurement object are progressively larger as the distance to the measurement object increases.SELECTED DRAWING: Figure 2 【課題】測定対象物までの距離に応じたセンサ出力の変動を抑制可能な反射型センサを提供する。【解決手段】測定対象物に照射光を照射し、測定対象物からの反射光を受光する反射型センサであって、基板110と、照射光を照射する発光素子140と、反射光のS波成分を受光する第1受光素子151および反射光のP波成分を受光する第2受光素子152と、レンズと、遮光壁170とを備える。遮光壁170は、反射光の一部を遮光して第1受光素子151へ反射光が入光可能な第1反射領域および第2受光素子152へ反射光が入光可能な第2反射領域を制限し、測定対象物の照射領域に対する第1反射領域および第2反射領域の各比率は、測定対象物までの距離が大きくなるほど大きくなることを特徴とする。【選択図】図2
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The reflection type sensor comprises: a substrate 110; a light-emitting element 140 for radiating irradiation light; a first light-receiving element 151 for receiving an S-wave component of the reflected light and a second light-receiving element 152 for receiving a P-wave component of the reflected light; a lens; and a shading wall 170. The shading wall 170 blocks a portion of the reflected light and limits a first reflection region where the reflected light can enter the first light-receiving element 151 and a second reflection region where the reflected light can enter the second light-receiving element 152, and ratios of the first and second reflection regions to the irradiation region of the measurement object are progressively larger as the distance to the measurement object increases.SELECTED DRAWING: Figure 2 【課題】測定対象物までの距離に応じたセンサ出力の変動を抑制可能な反射型センサを提供する。【解決手段】測定対象物に照射光を照射し、測定対象物からの反射光を受光する反射型センサであって、基板110と、照射光を照射する発光素子140と、反射光のS波成分を受光する第1受光素子151および反射光のP波成分を受光する第2受光素子152と、レンズと、遮光壁170とを備える。遮光壁170は、反射光の一部を遮光して第1受光素子151へ反射光が入光可能な第1反射領域および第2受光素子152へ反射光が入光可能な第2反射領域を制限し、測定対象物の照射領域に対する第1反射領域および第2反射領域の各比率は、測定対象物までの距離が大きくなるほど大きくなることを特徴とする。【選択図】図2</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; COLORIMETRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; ELECTROPHOTOGRAPHY ; HOLOGRAPHY ; MAGNETOGRAPHY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; PHOTOGRAPHY ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211101&amp;DB=EPODOC&amp;CC=JP&amp;NR=2021173668A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211101&amp;DB=EPODOC&amp;CC=JP&amp;NR=2021173668A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HONDA KAZUMA</creatorcontrib><title>REFLECTION TYPE SENSOR</title><description>To provide a reflection type sensor in which it is possible to suppress a change in sensor output that corresponds to the distance to a measurement object.SOLUTION: Provided is a reflection type sensor for irradiating a measurement object with irradiation light and receiving reflected light from the measurement object. 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The shading wall 170 blocks a portion of the reflected light and limits a first reflection region where the reflected light can enter the first light-receiving element 151 and a second reflection region where the reflected light can enter the second light-receiving element 152, and ratios of the first and second reflection regions to the irradiation region of the measurement object are progressively larger as the distance to the measurement object increases.SELECTED DRAWING: Figure 2 【課題】測定対象物までの距離に応じたセンサ出力の変動を抑制可能な反射型センサを提供する。【解決手段】測定対象物に照射光を照射し、測定対象物からの反射光を受光する反射型センサであって、基板110と、照射光を照射する発光素子140と、反射光のS波成分を受光する第1受光素子151および反射光のP波成分を受光する第2受光素子152と、レンズと、遮光壁170とを備える。遮光壁170は、反射光の一部を遮光して第1受光素子151へ反射光が入光可能な第1反射領域および第2受光素子152へ反射光が入光可能な第2反射領域を制限し、測定対象物の照射領域に対する第1反射領域および第2反射領域の各比率は、測定対象物までの距離が大きくなるほど大きくなることを特徴とする。【選択図】図2</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>COLORIMETRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>ELECTROPHOTOGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MAGNETOGRAPHY</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>PHOTOGRAPHY</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBALcnXzcXUO8fT3UwiJDHBVCHb1C_YP4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZGhobmxmZmFo7GRCkCAP-xH8A</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>HONDA KAZUMA</creator><scope>EVB</scope></search><sort><creationdate>20211101</creationdate><title>REFLECTION TYPE SENSOR</title><author>HONDA KAZUMA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021173668A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>COLORIMETRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>ELECTROPHOTOGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MAGNETOGRAPHY</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>PHOTOGRAPHY</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HONDA KAZUMA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HONDA KAZUMA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REFLECTION TYPE SENSOR</title><date>2021-11-01</date><risdate>2021</risdate><abstract>To provide a reflection type sensor in which it is possible to suppress a change in sensor output that corresponds to the distance to a measurement object.SOLUTION: Provided is a reflection type sensor for irradiating a measurement object with irradiation light and receiving reflected light from the measurement object. The reflection type sensor comprises: a substrate 110; a light-emitting element 140 for radiating irradiation light; a first light-receiving element 151 for receiving an S-wave component of the reflected light and a second light-receiving element 152 for receiving a P-wave component of the reflected light; a lens; and a shading wall 170. The shading wall 170 blocks a portion of the reflected light and limits a first reflection region where the reflected light can enter the first light-receiving element 151 and a second reflection region where the reflected light can enter the second light-receiving element 152, and ratios of the first and second reflection regions to the irradiation region of the measurement object are progressively larger as the distance to the measurement object increases.SELECTED DRAWING: Figure 2 【課題】測定対象物までの距離に応じたセンサ出力の変動を抑制可能な反射型センサを提供する。【解決手段】測定対象物に照射光を照射し、測定対象物からの反射光を受光する反射型センサであって、基板110と、照射光を照射する発光素子140と、反射光のS波成分を受光する第1受光素子151および反射光のP波成分を受光する第2受光素子152と、レンズと、遮光壁170とを備える。遮光壁170は、反射光の一部を遮光して第1受光素子151へ反射光が入光可能な第1反射領域および第2受光素子152へ反射光が入光可能な第2反射領域を制限し、測定対象物の照射領域に対する第1反射領域および第2反射領域の各比率は、測定対象物までの距離が大きくなるほど大きくなることを特徴とする。【選択図】図2</abstract><oa>free_for_read</oa></addata></record>
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language eng ; jpn
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subjects BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
ELECTROPHOTOGRAPHY
HOLOGRAPHY
MAGNETOGRAPHY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHOTOGRAPHY
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
title REFLECTION TYPE SENSOR
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