SINGLE CRYSTAL PHOSPHOR, AND PRODUCTION METHOD OF CRYSTAL
To provide a production method of a crystal capable of producing a crystal of a comparatively large size and a uniform composition, and to provide a new single crystal phosphor obtained by the production method.SOLUTION: A single crystal phosphor contains a main component composed of YAG or LuAG and...
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| creator | TERUI TATSUYA |
| description | To provide a production method of a crystal capable of producing a crystal of a comparatively large size and a uniform composition, and to provide a new single crystal phosphor obtained by the production method.SOLUTION: A single crystal phosphor contains a main component composed of YAG or LuAG and an accessory component containing at least one element of Ce, Pr, Sm, Eu, Tb, Dy, Tm, and Yb. A uniform concentration region where the accessory component is uniformly distributed is situated at the central part of the cross section of the single crystal phosphor and occupies an area of 35% or more to the area of the cross sectional.SELECTED DRAWING: Figure 2A
【課題】比較的に大きなサイズで、より均一な組成の結晶体を得ることができる結晶体の製造方法と、その製造方法により得られる新規な単結晶蛍光体を提供すること。【解決手段】ＹＡＧまたはＬｕＡＧから成る主成分と、Ｃｅ、Ｐｒ、Ｓｍ、Ｅｕ、Ｔｂ、Ｄｙ、ＴｍおよびＹｂの内少なくとも１つの元素を含む副成分と、を有する単結晶蛍光体である。単結晶蛍光体の横断面において、副成分が均一に分布する均一濃度領域が、横断面の中央部に位置し、横断面の断面積に対して、均一濃度領域の面積割合が、３５％以上である。【選択図】図２Ａ |
| format | Patent |
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【課題】比較的に大きなサイズで、より均一な組成の結晶体を得ることができる結晶体の製造方法と、その製造方法により得られる新規な単結晶蛍光体を提供すること。【解決手段】ＹＡＧまたはＬｕＡＧから成る主成分と、Ｃｅ、Ｐｒ、Ｓｍ、Ｅｕ、Ｔｂ、Ｄｙ、ＴｍおよびＹｂの内少なくとも１つの元素を含む副成分と、を有する単結晶蛍光体である。単結晶蛍光体の横断面において、副成分が均一に分布する均一濃度領域が、横断面の中央部に位置し、横断面の断面積に対して、均一濃度領域の面積割合が、３５％以上である。【選択図】図２Ａ</description><language>eng ; jpn</language><subject>ADHESIVES ; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; DYES ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211101&DB=EPODOC&CC=JP&NR=2021172796A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211101&DB=EPODOC&CC=JP&NR=2021172796A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TERUI TATSUYA</creatorcontrib><title>SINGLE CRYSTAL PHOSPHOR, AND PRODUCTION METHOD OF CRYSTAL</title><description>To provide a production method of a crystal capable of producing a crystal of a comparatively large size and a uniform composition, and to provide a new single crystal phosphor obtained by the production method.SOLUTION: A single crystal phosphor contains a main component composed of YAG or LuAG and an accessory component containing at least one element of Ce, Pr, Sm, Eu, Tb, Dy, Tm, and Yb. A uniform concentration region where the accessory component is uniformly distributed is situated at the central part of the cross section of the single crystal phosphor and occupies an area of 35% or more to the area of the cross sectional.SELECTED DRAWING: Figure 2A
【課題】比較的に大きなサイズで、より均一な組成の結晶体を得ることができる結晶体の製造方法と、その製造方法により得られる新規な単結晶蛍光体を提供すること。【解決手段】ＹＡＧまたはＬｕＡＧから成る主成分と、Ｃｅ、Ｐｒ、Ｓｍ、Ｅｕ、Ｔｂ、Ｄｙ、ＴｍおよびＹｂの内少なくとも１つの元素を含む副成分と、を有する単結晶蛍光体である。単結晶蛍光体の横断面において、副成分が均一に分布する均一濃度領域が、横断面の中央部に位置し、横断面の断面積に対して、均一濃度領域の面積割合が、３５％以上である。【選択図】図２Ａ</description><subject>ADHESIVES</subject><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DYES</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAM9vRz93FVcA6KDA5x9FEI8PAPBuIgHQVHPxeFgCB_l1DnEE9_PwVf1xAPfxcFfzeYUh4G1rTEnOJUXijNzaDk5hri7KGbWpAfn1pckJicmpdaEu8VYGRgZGhobmRuaeZoTJQiAOp6KVM</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>TERUI TATSUYA</creator><scope>EVB</scope></search><sort><creationdate>20211101</creationdate><title>SINGLE CRYSTAL PHOSPHOR, AND PRODUCTION METHOD OF CRYSTAL</title><author>TERUI TATSUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021172796A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DYES</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TERUI TATSUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TERUI TATSUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLE CRYSTAL PHOSPHOR, AND PRODUCTION METHOD OF CRYSTAL</title><date>2021-11-01</date><risdate>2021</risdate><abstract>To provide a production method of a crystal capable of producing a crystal of a comparatively large size and a uniform composition, and to provide a new single crystal phosphor obtained by the production method.SOLUTION: A single crystal phosphor contains a main component composed of YAG or LuAG and an accessory component containing at least one element of Ce, Pr, Sm, Eu, Tb, Dy, Tm, and Yb. A uniform concentration region where the accessory component is uniformly distributed is situated at the central part of the cross section of the single crystal phosphor and occupies an area of 35% or more to the area of the cross sectional.SELECTED DRAWING: Figure 2A
【課題】比較的に大きなサイズで、より均一な組成の結晶体を得ることができる結晶体の製造方法と、その製造方法により得られる新規な単結晶蛍光体を提供すること。【解決手段】ＹＡＧまたはＬｕＡＧから成る主成分と、Ｃｅ、Ｐｒ、Ｓｍ、Ｅｕ、Ｔｂ、Ｄｙ、ＴｍおよびＹｂの内少なくとも１つの元素を含む副成分と、を有する単結晶蛍光体である。単結晶蛍光体の横断面において、副成分が均一に分布する均一濃度領域が、横断面の中央部に位置し、横断面の断面積に対して、均一濃度領域の面積割合が、３５％以上である。【選択図】図２Ａ</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DYES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SINGLE CRYSTAL PHOSPHOR, AND PRODUCTION METHOD OF CRYSTAL |
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