SUBSTRATE PROCESSING APPARATUS
To provide a substrate processing apparatus capable of efficiently processing a substrate.SOLUTION: The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process processing unit for providing a processing space in which a substrat...
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| creator | YOON JI-HOON OH HYUN-WOO KANG KA-RAM SIM KWANG-BO SHIN DONG-WHEE |
| description | To provide a substrate processing apparatus capable of efficiently processing a substrate.SOLUTION: The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process processing unit for providing a processing space in which a substrate processing is performed; and a plasma generation unit for generating plasma. The plasma generation unit includes: a plasma chamber having a plasma generation space; a gas supply unit for supplying a process gas to the plasma generation space; a power application unit for generating plasma by exciting the process gas in the plasma generation space; and a diffusion chamber disposed below the plasma chamber and having a diffusion space for diffusing the plasma generated in the plasma generation space and/or the process gas supplied to the plasma generation space to be uniformly delivered to the processing space. A diffusion plate having at least one or more perforation holes formed thereon may be disposed in the diffusion space.SELECTED DRAWING: Figure 3
【課題】基板を効率的に処理することができる基板処理装置を提供する。【解決手段】本発明は基板を処理する装置を提供する。本発明は基板を処理する装置を提供する。基板を処理する装置は、基板に対する処理が遂行される処理空間を提供する工程処理部と、プラズマを発生させるプラズマ発生部と、を含み、前記プラズマ発生部は、プラズマ発生空間を有するプラズマチャンバーと、前記プラズマ発生空間に工程ガスを供給するガス供給ユニットと、前記プラズマ発生空間で、前記工程ガスを、励起てプラズマを発生させる電力印加ユニットと、前記プラズマチャンバーの下に配置され、前記プラズマ発生空間で発生された前記プラズマ及び／又は前記のプラズマ発生空間に供給された工程ガスを前記処理空間に均一に伝達されるように拡散させる拡散空間を有する拡散チャンバーと、を含み、拡散空間には、少なくとも一つ以上の穴あけが形成された拡散プレートが配置されることができる。【選択図】図３ |
| format | Patent |
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【課題】基板を効率的に処理することができる基板処理装置を提供する。【解決手段】本発明は基板を処理する装置を提供する。本発明は基板を処理する装置を提供する。基板を処理する装置は、基板に対する処理が遂行される処理空間を提供する工程処理部と、プラズマを発生させるプラズマ発生部と、を含み、前記プラズマ発生部は、プラズマ発生空間を有するプラズマチャンバーと、前記プラズマ発生空間に工程ガスを供給するガス供給ユニットと、前記プラズマ発生空間で、前記工程ガスを、励起てプラズマを発生させる電力印加ユニットと、前記プラズマチャンバーの下に配置され、前記プラズマ発生空間で発生された前記プラズマ及び／又は前記のプラズマ発生空間に供給された工程ガスを前記処理空間に均一に伝達されるように拡散させる拡散空間を有する拡散チャンバーと、を含み、拡散空間には、少なくとも一つ以上の穴あけが形成された拡散プレートが配置されることができる。【選択図】図３</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211011&DB=EPODOC&CC=JP&NR=2021163970A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211011&DB=EPODOC&CC=JP&NR=2021163970A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOON JI-HOON</creatorcontrib><creatorcontrib>OH HYUN-WOO</creatorcontrib><creatorcontrib>KANG KA-RAM</creatorcontrib><creatorcontrib>SIM KWANG-BO</creatorcontrib><creatorcontrib>SHIN DONG-WHEE</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS</title><description>To provide a substrate processing apparatus capable of efficiently processing a substrate.SOLUTION: The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process processing unit for providing a processing space in which a substrate processing is performed; and a plasma generation unit for generating plasma. The plasma generation unit includes: a plasma chamber having a plasma generation space; a gas supply unit for supplying a process gas to the plasma generation space; a power application unit for generating plasma by exciting the process gas in the plasma generation space; and a diffusion chamber disposed below the plasma chamber and having a diffusion space for diffusing the plasma generated in the plasma generation space and/or the process gas supplied to the plasma generation space to be uniformly delivered to the processing space. A diffusion plate having at least one or more perforation holes formed thereon may be disposed in the diffusion space.SELECTED DRAWING: Figure 3
【課題】基板を効率的に処理することができる基板処理装置を提供する。【解決手段】本発明は基板を処理する装置を提供する。本発明は基板を処理する装置を提供する。基板を処理する装置は、基板に対する処理が遂行される処理空間を提供する工程処理部と、プラズマを発生させるプラズマ発生部と、を含み、前記プラズマ発生部は、プラズマ発生空間を有するプラズマチャンバーと、前記プラズマ発生空間に工程ガスを供給するガス供給ユニットと、前記プラズマ発生空間で、前記工程ガスを、励起てプラズマを発生させる電力印加ユニットと、前記プラズマチャンバーの下に配置され、前記プラズマ発生空間で発生された前記プラズマ及び／又は前記のプラズマ発生空間に供給された工程ガスを前記処理空間に均一に伝達されるように拡散させる拡散空間を有する拡散チャンバーと、を含み、拡散空間には、少なくとも一つ以上の穴あけが形成された拡散プレートが配置されることができる。【選択図】図３</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBvMwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDI0NDM2NLcwNHY6IUAQAaBSIi</recordid><startdate>20211011</startdate><enddate>20211011</enddate><creator>YOON JI-HOON</creator><creator>OH HYUN-WOO</creator><creator>KANG KA-RAM</creator><creator>SIM KWANG-BO</creator><creator>SHIN DONG-WHEE</creator><scope>EVB</scope></search><sort><creationdate>20211011</creationdate><title>SUBSTRATE PROCESSING APPARATUS</title><author>YOON JI-HOON ; OH HYUN-WOO ; KANG KA-RAM ; SIM KWANG-BO ; SHIN DONG-WHEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021163970A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YOON JI-HOON</creatorcontrib><creatorcontrib>OH HYUN-WOO</creatorcontrib><creatorcontrib>KANG KA-RAM</creatorcontrib><creatorcontrib>SIM KWANG-BO</creatorcontrib><creatorcontrib>SHIN DONG-WHEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOON JI-HOON</au><au>OH HYUN-WOO</au><au>KANG KA-RAM</au><au>SIM KWANG-BO</au><au>SHIN DONG-WHEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS</title><date>2021-10-11</date><risdate>2021</risdate><abstract>To provide a substrate processing apparatus capable of efficiently processing a substrate.SOLUTION: The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process processing unit for providing a processing space in which a substrate processing is performed; and a plasma generation unit for generating plasma. The plasma generation unit includes: a plasma chamber having a plasma generation space; a gas supply unit for supplying a process gas to the plasma generation space; a power application unit for generating plasma by exciting the process gas in the plasma generation space; and a diffusion chamber disposed below the plasma chamber and having a diffusion space for diffusing the plasma generated in the plasma generation space and/or the process gas supplied to the plasma generation space to be uniformly delivered to the processing space. A diffusion plate having at least one or more perforation holes formed thereon may be disposed in the diffusion space.SELECTED DRAWING: Figure 3
【課題】基板を効率的に処理することができる基板処理装置を提供する。【解決手段】本発明は基板を処理する装置を提供する。本発明は基板を処理する装置を提供する。基板を処理する装置は、基板に対する処理が遂行される処理空間を提供する工程処理部と、プラズマを発生させるプラズマ発生部と、を含み、前記プラズマ発生部は、プラズマ発生空間を有するプラズマチャンバーと、前記プラズマ発生空間に工程ガスを供給するガス供給ユニットと、前記プラズマ発生空間で、前記工程ガスを、励起てプラズマを発生させる電力印加ユニットと、前記プラズマチャンバーの下に配置され、前記プラズマ発生空間で発生された前記プラズマ及び／又は前記のプラズマ発生空間に供給された工程ガスを前記処理空間に均一に伝達されるように拡散させる拡散空間を有する拡散チャンバーと、を含み、拡散空間には、少なくとも一つ以上の穴あけが形成された拡散プレートが配置されることができる。【選択図】図３</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING APPARATUS |
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