SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS
To provide a substrate mounting table and a substrate processing apparatus which suitably control the temperature of a mounting surface for mounting a substrate.SOLUTION: In a substrate processing apparatus, a substrate mounting table comprises: a mounting table base material 4a internally having a...
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| creator | TORIYA DAISUKE TSUDA EINOSUKE FUKUDOME MOTOSHI TAKEDA SATOSHI IKEDA KYOKO YONEKURA SOSHI |
| description | To provide a substrate mounting table and a substrate processing apparatus which suitably control the temperature of a mounting surface for mounting a substrate.SOLUTION: In a substrate processing apparatus, a substrate mounting table comprises: a mounting table base material 4a internally having a cooling target surface 41; and a supply passage formation member 6 which is made of a material having heat conductivity lower than that of the mounting table base material 4a, and which has a cooling nozzle 66 for blowing a coolant at the cooling target surface 41. The supply passage formation member 6 also has a first passage formation member 63 extending in the radial direction of the mounting table base material 4a. The mounting table base material 4a has a first groove 43 in which the first passage formation member 63 is disposed. The cross-sectional shape of the first passage formation member 63 and that of the first groove 43 differ from each other.SELECTED DRAWING: Figure 2
【課題】基板を載置する載置面の温度を好適に制御する基板載置台及び基板処理装置を提供する。【解決手段】基板処理装置において、基板載置台は、内部に被冷却面４１を有する載置台母材４ａと、載置台母材４ａよりも低熱伝導性の材料で形成され、被冷却面４１に向けて冷媒を噴射する冷却ノズル６６を有する供給流路形成部材６と、を備える。また、供給流路形成部材６は、載置台母材４ａの径方向に延びる第１の流路形成部材６３を有する。載置台母材４ａは、第１の流路形成部材６３が配置される第１の溝部４３を有する。第１の流路形成部材６３の断面形状と、第１の溝部４３の断面形状は異なる。【選択図】図２ |
| format | Patent |
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【課題】基板を載置する載置面の温度を好適に制御する基板載置台及び基板処理装置を提供する。【解決手段】基板処理装置において、基板載置台は、内部に被冷却面４１を有する載置台母材４ａと、載置台母材４ａよりも低熱伝導性の材料で形成され、被冷却面４１に向けて冷媒を噴射する冷却ノズル６６を有する供給流路形成部材６と、を備える。また、供給流路形成部材６は、載置台母材４ａの径方向に延びる第１の流路形成部材６３を有する。載置台母材４ａは、第１の流路形成部材６３が配置される第１の溝部４３を有する。第１の流路形成部材６３の断面形状と、第１の溝部４３の断面形状は異なる。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210930&DB=EPODOC&CC=JP&NR=2021153142A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210930&DB=EPODOC&CC=JP&NR=2021153142A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TORIYA DAISUKE</creatorcontrib><creatorcontrib>TSUDA EINOSUKE</creatorcontrib><creatorcontrib>FUKUDOME MOTOSHI</creatorcontrib><creatorcontrib>TAKEDA SATOSHI</creatorcontrib><creatorcontrib>IKEDA KYOKO</creatorcontrib><creatorcontrib>YONEKURA SOSHI</creatorcontrib><title>SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS</title><description>To provide a substrate mounting table and a substrate processing apparatus which suitably control the temperature of a mounting surface for mounting a substrate.SOLUTION: In a substrate processing apparatus, a substrate mounting table comprises: a mounting table base material 4a internally having a cooling target surface 41; and a supply passage formation member 6 which is made of a material having heat conductivity lower than that of the mounting table base material 4a, and which has a cooling nozzle 66 for blowing a coolant at the cooling target surface 41. The supply passage formation member 6 also has a first passage formation member 63 extending in the radial direction of the mounting table base material 4a. The mounting table base material 4a has a first groove 43 in which the first passage formation member 63 is disposed. The cross-sectional shape of the first passage formation member 63 and that of the first groove 43 differ from each other.SELECTED DRAWING: Figure 2
【課題】基板を載置する載置面の温度を好適に制御する基板載置台及び基板処理装置を提供する。【解決手段】基板処理装置において、基板載置台は、内部に被冷却面４１を有する載置台母材４ａと、載置台母材４ａよりも低熱伝導性の材料で形成され、被冷却面４１に向けて冷媒を噴射する冷却ノズル６６を有する供給流路形成部材６と、を備える。また、供給流路形成部材６は、載置台母材４ａの径方向に延びる第１の流路形成部材６３を有する。載置台母材４ａは、第１の流路形成部材６３が配置される第１の溝部４３を有する。第１の流路形成部材６３の断面形状と、第１の溝部４３の断面形状は異なる。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAODnUKDglyDHFV8PUP9Qvx9HNXCHF08nFVcPRzUUBIBgT5O7sGB4OkHQMCHIFiocE8DKxpiTnFqbxQmptByc01xNlDN7UgPz61uCAxOTUvtSTeK8DIwMjQ0NTY0MTI0ZgoRQBgPSoU</recordid><startdate>20210930</startdate><enddate>20210930</enddate><creator>TORIYA DAISUKE</creator><creator>TSUDA EINOSUKE</creator><creator>FUKUDOME MOTOSHI</creator><creator>TAKEDA SATOSHI</creator><creator>IKEDA KYOKO</creator><creator>YONEKURA SOSHI</creator><scope>EVB</scope></search><sort><creationdate>20210930</creationdate><title>SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS</title><author>TORIYA DAISUKE ; TSUDA EINOSUKE ; FUKUDOME MOTOSHI ; TAKEDA SATOSHI ; IKEDA KYOKO ; YONEKURA SOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021153142A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TORIYA DAISUKE</creatorcontrib><creatorcontrib>TSUDA EINOSUKE</creatorcontrib><creatorcontrib>FUKUDOME MOTOSHI</creatorcontrib><creatorcontrib>TAKEDA SATOSHI</creatorcontrib><creatorcontrib>IKEDA KYOKO</creatorcontrib><creatorcontrib>YONEKURA SOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TORIYA DAISUKE</au><au>TSUDA EINOSUKE</au><au>FUKUDOME MOTOSHI</au><au>TAKEDA SATOSHI</au><au>IKEDA KYOKO</au><au>YONEKURA SOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS</title><date>2021-09-30</date><risdate>2021</risdate><abstract>To provide a substrate mounting table and a substrate processing apparatus which suitably control the temperature of a mounting surface for mounting a substrate.SOLUTION: In a substrate processing apparatus, a substrate mounting table comprises: a mounting table base material 4a internally having a cooling target surface 41; and a supply passage formation member 6 which is made of a material having heat conductivity lower than that of the mounting table base material 4a, and which has a cooling nozzle 66 for blowing a coolant at the cooling target surface 41. The supply passage formation member 6 also has a first passage formation member 63 extending in the radial direction of the mounting table base material 4a. The mounting table base material 4a has a first groove 43 in which the first passage formation member 63 is disposed. The cross-sectional shape of the first passage formation member 63 and that of the first groove 43 differ from each other.SELECTED DRAWING: Figure 2
【課題】基板を載置する載置面の温度を好適に制御する基板載置台及び基板処理装置を提供する。【解決手段】基板処理装置において、基板載置台は、内部に被冷却面４１を有する載置台母材４ａと、載置台母材４ａよりも低熱伝導性の材料で形成され、被冷却面４１に向けて冷媒を噴射する冷却ノズル６６を有する供給流路形成部材６と、を備える。また、供給流路形成部材６は、載置台母材４ａの径方向に延びる第１の流路形成部材６３を有する。載置台母材４ａは、第１の流路形成部材６３が配置される第１の溝部４３を有する。第１の流路形成部材６３の断面形状と、第１の溝部４３の断面形状は異なる。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS |
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