SPUTTERING APPARATUS
To provide a sputtering apparatus capable of suitably adjusting film thickness distribution.SOLUTION: A sputtering apparatus includes: first and second targets ejecting a sputtering particle; a substrate support part for supporting a substrate; and a shielding plate which is arranged between the fir...
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| creator | HIRASAWA TATSURO TOSHIMA HIROSHI IWASHITA HIROYUKI ISHIBASHI SHOTA |
| description | To provide a sputtering apparatus capable of suitably adjusting film thickness distribution.SOLUTION: A sputtering apparatus includes: first and second targets ejecting a sputtering particle; a substrate support part for supporting a substrate; and a shielding plate which is arranged between the first and second targets and has a passing hole through which the sputtering particle passes. The passing hole has a first opening area for passing the sputtering particle ejected from the first target and a second opening area for passing the sputtering particle ejected from the second target. The sputtering apparatus further includes a preventive mechanism for preventing the sputtering particle ejected from the first target from passing the second opening area and the sputtering particle ejected from the second target from passing the first opening area.SELECTED DRAWING: Figure 1
【課題】好適に膜厚分布を調整できるスパッタ装置を提供する。【解決手段】スパッタ粒子を放出する第１及び第２のターゲットと、基板を支持する基板支持部と、前記第１及び第２のターゲットと前記基板との間に配置され、前記スパッタ粒子が通過する通過孔を有する遮蔽板と、を備え、前記通過孔は、前記第１のターゲットから放出されたスパッタ粒子を通過させる第１の開口領域と、前記第２のターゲットから放出されたスパッタ粒子を通過させる第２の開口領域と、を有し、前記第１のターゲットから放出されたスパッタ粒子が第２の開口領域を通過することを阻害し、前記第２のターゲットから放出されたスパッタ粒子が第１の開口領域を通過することを阻害する阻害機構を更に備える、スパッタ装置。【選択図】図１ |
| format | Patent |
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【課題】好適に膜厚分布を調整できるスパッタ装置を提供する。【解決手段】スパッタ粒子を放出する第１及び第２のターゲットと、基板を支持する基板支持部と、前記第１及び第２のターゲットと前記基板との間に配置され、前記スパッタ粒子が通過する通過孔を有する遮蔽板と、を備え、前記通過孔は、前記第１のターゲットから放出されたスパッタ粒子を通過させる第１の開口領域と、前記第２のターゲットから放出されたスパッタ粒子を通過させる第２の開口領域と、を有し、前記第１のターゲットから放出されたスパッタ粒子が第２の開口領域を通過することを阻害し、前記第２のターゲットから放出されたスパッタ粒子が第１の開口領域を通過することを阻害する阻害機構を更に備える、スパッタ装置。【選択図】図１</description><language>eng ; jpn</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210930&DB=EPODOC&CC=JP&NR=2021152204A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210930&DB=EPODOC&CC=JP&NR=2021152204A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIRASAWA TATSURO</creatorcontrib><creatorcontrib>TOSHIMA HIROSHI</creatorcontrib><creatorcontrib>IWASHITA HIROYUKI</creatorcontrib><creatorcontrib>ISHIBASHI SHOTA</creatorcontrib><title>SPUTTERING APPARATUS</title><description>To provide a sputtering apparatus capable of suitably adjusting film thickness distribution.SOLUTION: A sputtering apparatus includes: first and second targets ejecting a sputtering particle; a substrate support part for supporting a substrate; and a shielding plate which is arranged between the first and second targets and has a passing hole through which the sputtering particle passes. The passing hole has a first opening area for passing the sputtering particle ejected from the first target and a second opening area for passing the sputtering particle ejected from the second target. The sputtering apparatus further includes a preventive mechanism for preventing the sputtering particle ejected from the first target from passing the second opening area and the sputtering particle ejected from the second target from passing the first opening area.SELECTED DRAWING: Figure 1
【課題】好適に膜厚分布を調整できるスパッタ装置を提供する。【解決手段】スパッタ粒子を放出する第１及び第２のターゲットと、基板を支持する基板支持部と、前記第１及び第２のターゲットと前記基板との間に配置され、前記スパッタ粒子が通過する通過孔を有する遮蔽板と、を備え、前記通過孔は、前記第１のターゲットから放出されたスパッタ粒子を通過させる第１の開口領域と、前記第２のターゲットから放出されたスパッタ粒子を通過させる第２の開口領域と、を有し、前記第１のターゲットから放出されたスパッタ粒子が第２の開口領域を通過することを阻害し、前記第２のターゲットから放出されたスパッタ粒子が第１の開口領域を通過することを阻害する阻害機構を更に備える、スパッタ装置。【選択図】図１</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJDggNCXEN8vRzV3AMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRoaGpkZGBiaOxkQpAgDQJh87</recordid><startdate>20210930</startdate><enddate>20210930</enddate><creator>HIRASAWA TATSURO</creator><creator>TOSHIMA HIROSHI</creator><creator>IWASHITA HIROYUKI</creator><creator>ISHIBASHI SHOTA</creator><scope>EVB</scope></search><sort><creationdate>20210930</creationdate><title>SPUTTERING APPARATUS</title><author>HIRASAWA TATSURO ; TOSHIMA HIROSHI ; IWASHITA HIROYUKI ; ISHIBASHI SHOTA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021152204A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HIRASAWA TATSURO</creatorcontrib><creatorcontrib>TOSHIMA HIROSHI</creatorcontrib><creatorcontrib>IWASHITA HIROYUKI</creatorcontrib><creatorcontrib>ISHIBASHI SHOTA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIRASAWA TATSURO</au><au>TOSHIMA HIROSHI</au><au>IWASHITA HIROYUKI</au><au>ISHIBASHI SHOTA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTERING APPARATUS</title><date>2021-09-30</date><risdate>2021</risdate><abstract>To provide a sputtering apparatus capable of suitably adjusting film thickness distribution.SOLUTION: A sputtering apparatus includes: first and second targets ejecting a sputtering particle; a substrate support part for supporting a substrate; and a shielding plate which is arranged between the first and second targets and has a passing hole through which the sputtering particle passes. The passing hole has a first opening area for passing the sputtering particle ejected from the first target and a second opening area for passing the sputtering particle ejected from the second target. The sputtering apparatus further includes a preventive mechanism for preventing the sputtering particle ejected from the first target from passing the second opening area and the sputtering particle ejected from the second target from passing the first opening area.SELECTED DRAWING: Figure 1
【課題】好適に膜厚分布を調整できるスパッタ装置を提供する。【解決手段】スパッタ粒子を放出する第１及び第２のターゲットと、基板を支持する基板支持部と、前記第１及び第２のターゲットと前記基板との間に配置され、前記スパッタ粒子が通過する通過孔を有する遮蔽板と、を備え、前記通過孔は、前記第１のターゲットから放出されたスパッタ粒子を通過させる第１の開口領域と、前記第２のターゲットから放出されたスパッタ粒子を通過させる第２の開口領域と、を有し、前記第１のターゲットから放出されたスパッタ粒子が第２の開口領域を通過することを阻害し、前記第２のターゲットから放出されたスパッタ粒子が第１の開口領域を通過することを阻害する阻害機構を更に備える、スパッタ装置。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SPUTTERING APPARATUS |
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