CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER BY USING THE SAME

To provide a CMP slurry composition for polishing a tungsten pattern wafer, which can improve the polishing rate and flatness and eliminate a defect in a tungsten pattern wafer surface when polishing the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KIM WON JUNG, PARK TAE WON, CHO YOUN JIN, LEE EUI RANG, LEE JONG-WON, KOO YOON YOUNG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES THEIR RELEVANT APPARATUS TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	KIM WON JUNG PARK TAE WON CHO YOUN JIN LEE EUI RANG LEE JONG-WON KOO YOON YOUNG
description	To provide a CMP slurry composition for polishing a tungsten pattern wafer, which can improve the polishing rate and flatness and eliminate a defect in a tungsten pattern wafer surface when polishing the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer comprises: one or more kinds of a polar solvent and a nonpolar solvent; a polishing agent; and an oxidant. The polishing agent contains silica subjected to property modification by amino silane of which the number of nitrogen atoms is three.SELECTED DRAWING: None 【課題】タングステンパターンウェハーの研磨時、研磨速度及び平坦性を改善し、タングステンパターンウェハーの表面の欠陥をなくすタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を提供する。【解決手段】極性溶媒及び非極性溶媒のうちの１種以上の溶媒；研磨剤；及び酸化剤；を含み、前記研磨剤は、窒素の個数が３個であるアミノシランで改質されたシリカを含むタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を構成する。【選択図】なし
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2021118362A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2021118362A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2021118362A3</originalsourceid><addsrcrecordid>eNqNi7sKwjAUQLM4iPoPF2cFk4K4xvS2iTQPklukUykSJ9FCnf12QfyATmc45yzZR9kAqWlj7EB5G3wyZLyDykcIvjFJG1cDta5OhA6CJMLo4CorjDuQrgSLpH05a4BzB236eY2QpMU1W9yHx5Q3f67YtkJSep_HV5-ncbjlZ373lyAOgnN-Ko5CFrOiL7bHPFg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER BY USING THE SAME</title><source>esp@cenet</source><creator>KIM WON JUNG ; PARK TAE WON ; CHO YOUN JIN ; LEE EUI RANG ; LEE JONG-WON ; KOO YOON YOUNG</creator><creatorcontrib>KIM WON JUNG ; PARK TAE WON ; CHO YOUN JIN ; LEE EUI RANG ; LEE JONG-WON ; KOO YOON YOUNG</creatorcontrib><description>To provide a CMP slurry composition for polishing a tungsten pattern wafer, which can improve the polishing rate and flatness and eliminate a defect in a tungsten pattern wafer surface when polishing the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer comprises: one or more kinds of a polar solvent and a nonpolar solvent; a polishing agent; and an oxidant. The polishing agent contains silica subjected to property modification by amino silane of which the number of nitrogen atoms is three.SELECTED DRAWING: None 【課題】タングステンパターンウェハーの研磨時、研磨速度及び平坦性を改善し、タングステンパターンウェハーの表面の欠陥をなくすタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を提供する。【解決手段】極性溶媒及び非極性溶媒のうちの１種以上の溶媒；研磨剤；及び酸化剤；を含み、前記研磨剤は、窒素の個数が３個であるアミノシランで改質されたシリカを含むタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を構成する。【選択図】なし</description><language>eng ; jpn</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; CHEMISTRY ; COMPOUNDS THEREOF ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; INORGANIC CHEMISTRY ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; NON-METALLIC ELEMENTS ; PAINTS ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; THEIR RELEVANT APPARATUS ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210810&DB=EPODOC&CC=JP&NR=2021118362A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210810&DB=EPODOC&CC=JP&NR=2021118362A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM WON JUNG</creatorcontrib><creatorcontrib>PARK TAE WON</creatorcontrib><creatorcontrib>CHO YOUN JIN</creatorcontrib><creatorcontrib>LEE EUI RANG</creatorcontrib><creatorcontrib>LEE JONG-WON</creatorcontrib><creatorcontrib>KOO YOON YOUNG</creatorcontrib><title>CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER BY USING THE SAME</title><description>To provide a CMP slurry composition for polishing a tungsten pattern wafer, which can improve the polishing rate and flatness and eliminate a defect in a tungsten pattern wafer surface when polishing the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer comprises: one or more kinds of a polar solvent and a nonpolar solvent; a polishing agent; and an oxidant. The polishing agent contains silica subjected to property modification by amino silane of which the number of nitrogen atoms is three.SELECTED DRAWING: None 【課題】タングステンパターンウェハーの研磨時、研磨速度及び平坦性を改善し、タングステンパターンウェハーの表面の欠陥をなくすタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を提供する。【解決手段】極性溶媒及び非極性溶媒のうちの１種以上の溶媒；研磨剤；及び酸化剤；を含み、前記研磨剤は、窒素の個数が３個であるアミノシランで改質されたシリカを含むタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を構成する。【選択図】なし</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>INORGANIC CHEMISTRY</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>THEIR RELEVANT APPARATUS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7sKwjAUQLM4iPoPF2cFk4K4xvS2iTQPklukUykSJ9FCnf12QfyATmc45yzZR9kAqWlj7EB5G3wyZLyDykcIvjFJG1cDta5OhA6CJMLo4CorjDuQrgSLpH05a4BzB236eY2QpMU1W9yHx5Q3f67YtkJSep_HV5-ncbjlZ373lyAOgnN-Ko5CFrOiL7bHPFg</recordid><startdate>20210810</startdate><enddate>20210810</enddate><creator>KIM WON JUNG</creator><creator>PARK TAE WON</creator><creator>CHO YOUN JIN</creator><creator>LEE EUI RANG</creator><creator>LEE JONG-WON</creator><creator>KOO YOON YOUNG</creator><scope>EVB</scope></search><sort><creationdate>20210810</creationdate><title>CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER BY USING THE SAME</title><author>KIM WON JUNG ; PARK TAE WON ; CHO YOUN JIN ; LEE EUI RANG ; LEE JONG-WON ; KOO YOON YOUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021118362A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>INORGANIC CHEMISTRY</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>THEIR RELEVANT APPARATUS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM WON JUNG</creatorcontrib><creatorcontrib>PARK TAE WON</creatorcontrib><creatorcontrib>CHO YOUN JIN</creatorcontrib><creatorcontrib>LEE EUI RANG</creatorcontrib><creatorcontrib>LEE JONG-WON</creatorcontrib><creatorcontrib>KOO YOON YOUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM WON JUNG</au><au>PARK TAE WON</au><au>CHO YOUN JIN</au><au>LEE EUI RANG</au><au>LEE JONG-WON</au><au>KOO YOON YOUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER BY USING THE SAME</title><date>2021-08-10</date><risdate>2021</risdate><abstract>To provide a CMP slurry composition for polishing a tungsten pattern wafer, which can improve the polishing rate and flatness and eliminate a defect in a tungsten pattern wafer surface when polishing the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer comprises: one or more kinds of a polar solvent and a nonpolar solvent; a polishing agent; and an oxidant. The polishing agent contains silica subjected to property modification by amino silane of which the number of nitrogen atoms is three.SELECTED DRAWING: None 【課題】タングステンパターンウェハーの研磨時、研磨速度及び平坦性を改善し、タングステンパターンウェハーの表面の欠陥をなくすタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を提供する。【解決手段】極性溶媒及び非極性溶媒のうちの１種以上の溶媒；研磨剤；及び酸化剤；を含み、前記研磨剤は、窒素の個数が３個であるアミノシランで改質されたシリカを含むタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を構成する。【選択図】なし</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng ; jpn
recordid	cdi_epo_espacenet_JP2021118362A
source	esp@cenet
subjects	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES THEIR RELEVANT APPARATUS TRANSPORTING
title	CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER BY USING THE SAME
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T04%3A14%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20WON%20JUNG&rft.date=2021-08-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2021118362A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true