LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
To provide a laser annealing device and a laser annealing method capable of obtaining a stable crystal having large crystal grains in the movement direction of a laser beam relative to a substrate.SOLUTION: In a laser annealing device that moves CW laser light relative to an amorphous silicon film i...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SAWAI TAKUYA |
| description | To provide a laser annealing device and a laser annealing method capable of obtaining a stable crystal having large crystal grains in the movement direction of a laser beam relative to a substrate.SOLUTION: In a laser annealing device that moves CW laser light relative to an amorphous silicon film in a certain direction, and grows the amorphous silicon film laterally to form a crystallized silicon film, an optical system includes a beam shaping unit that shapes the CW laser beam into a laser beam that forms a focusing ring, and a beam division unit having a reflecting surface that produces a semi-annular laser beam by dividing and reflecting the shaped annular laser beam, and the hemispherical laser beam is applied to the irradiated surface of the amorphous silicon film such that the outer peripheral edge of the hemispherical laser beam faces the relative movement direction of the laser beam.SELECTED DRAWING: Figure 7
【課題】基板に対する相対的なレーザビームの移動方向に結晶粒の大きな安定した結晶を得ることができるレーザアニール装置及びレーザアニール方法を提供すること。【解決手段】非晶質シリコン膜に対してＣＷレーザ光を一定方向に相対移動させ、非晶質シリコン膜をラテラル結晶成長させて結晶化シリコン膜を形成するレーザアニール装置であって、光学系は、ＣＷレーザ光を、集光環を形成するレーザビームに整形するビーム整形部と、整形された環状のレーザビームを分割して反射することによって半環状のレーザビームを生成する反射面を有するビーム分割部とを有し、半環状のレーザビームの外周縁がレーザビームの相対移動方向に向くように、半環状のレーザビームを非晶質シリコン膜の被照射面に照射する。【選択図】図７ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2021111725A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2021111725A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2021111725A3</originalsourceid><addsrcrecordid>eNrjZDD0cQx2DVJw9PNzdfTx9HNXcHEN83R2BQq4KKBL-bqGePi78DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMjQyAwNzJ1NCZKEQBuLCaE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LASER ANNEALING DEVICE AND LASER ANNEALING METHOD</title><source>esp@cenet</source><creator>SAWAI TAKUYA</creator><creatorcontrib>SAWAI TAKUYA</creatorcontrib><description>To provide a laser annealing device and a laser annealing method capable of obtaining a stable crystal having large crystal grains in the movement direction of a laser beam relative to a substrate.SOLUTION: In a laser annealing device that moves CW laser light relative to an amorphous silicon film in a certain direction, and grows the amorphous silicon film laterally to form a crystallized silicon film, an optical system includes a beam shaping unit that shapes the CW laser beam into a laser beam that forms a focusing ring, and a beam division unit having a reflecting surface that produces a semi-annular laser beam by dividing and reflecting the shaped annular laser beam, and the hemispherical laser beam is applied to the irradiated surface of the amorphous silicon film such that the outer peripheral edge of the hemispherical laser beam faces the relative movement direction of the laser beam.SELECTED DRAWING: Figure 7
【課題】基板に対する相対的なレーザビームの移動方向に結晶粒の大きな安定した結晶を得ることができるレーザアニール装置及びレーザアニール方法を提供すること。【解決手段】非晶質シリコン膜に対してＣＷレーザ光を一定方向に相対移動させ、非晶質シリコン膜をラテラル結晶成長させて結晶化シリコン膜を形成するレーザアニール装置であって、光学系は、ＣＷレーザ光を、集光環を形成するレーザビームに整形するビーム整形部と、整形された環状のレーザビームを分割して反射することによって半環状のレーザビームを生成する反射面を有するビーム分割部とを有し、半環状のレーザビームの外周縁がレーザビームの相対移動方向に向くように、半環状のレーザビームを非晶質シリコン膜の被照射面に照射する。【選択図】図７</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210802&DB=EPODOC&CC=JP&NR=2021111725A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210802&DB=EPODOC&CC=JP&NR=2021111725A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAWAI TAKUYA</creatorcontrib><title>LASER ANNEALING DEVICE AND LASER ANNEALING METHOD</title><description>To provide a laser annealing device and a laser annealing method capable of obtaining a stable crystal having large crystal grains in the movement direction of a laser beam relative to a substrate.SOLUTION: In a laser annealing device that moves CW laser light relative to an amorphous silicon film in a certain direction, and grows the amorphous silicon film laterally to form a crystallized silicon film, an optical system includes a beam shaping unit that shapes the CW laser beam into a laser beam that forms a focusing ring, and a beam division unit having a reflecting surface that produces a semi-annular laser beam by dividing and reflecting the shaped annular laser beam, and the hemispherical laser beam is applied to the irradiated surface of the amorphous silicon film such that the outer peripheral edge of the hemispherical laser beam faces the relative movement direction of the laser beam.SELECTED DRAWING: Figure 7
【課題】基板に対する相対的なレーザビームの移動方向に結晶粒の大きな安定した結晶を得ることができるレーザアニール装置及びレーザアニール方法を提供すること。【解決手段】非晶質シリコン膜に対してＣＷレーザ光を一定方向に相対移動させ、非晶質シリコン膜をラテラル結晶成長させて結晶化シリコン膜を形成するレーザアニール装置であって、光学系は、ＣＷレーザ光を、集光環を形成するレーザビームに整形するビーム整形部と、整形された環状のレーザビームを分割して反射することによって半環状のレーザビームを生成する反射面を有するビーム分割部とを有し、半環状のレーザビームの外周縁がレーザビームの相対移動方向に向くように、半環状のレーザビームを非晶質シリコン膜の被照射面に照射する。【選択図】図７</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD0cQx2DVJw9PNzdfTx9HNXcHEN83R2BQq4KKBL-bqGePi78DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMjQyAwNzJ1NCZKEQBuLCaE</recordid><startdate>20210802</startdate><enddate>20210802</enddate><creator>SAWAI TAKUYA</creator><scope>EVB</scope></search><sort><creationdate>20210802</creationdate><title>LASER ANNEALING DEVICE AND LASER ANNEALING METHOD</title><author>SAWAI TAKUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021111725A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>SAWAI TAKUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAWAI TAKUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LASER ANNEALING DEVICE AND LASER ANNEALING METHOD</title><date>2021-08-02</date><risdate>2021</risdate><abstract>To provide a laser annealing device and a laser annealing method capable of obtaining a stable crystal having large crystal grains in the movement direction of a laser beam relative to a substrate.SOLUTION: In a laser annealing device that moves CW laser light relative to an amorphous silicon film in a certain direction, and grows the amorphous silicon film laterally to form a crystallized silicon film, an optical system includes a beam shaping unit that shapes the CW laser beam into a laser beam that forms a focusing ring, and a beam division unit having a reflecting surface that produces a semi-annular laser beam by dividing and reflecting the shaped annular laser beam, and the hemispherical laser beam is applied to the irradiated surface of the amorphous silicon film such that the outer peripheral edge of the hemispherical laser beam faces the relative movement direction of the laser beam.SELECTED DRAWING: Figure 7
【課題】基板に対する相対的なレーザビームの移動方向に結晶粒の大きな安定した結晶を得ることができるレーザアニール装置及びレーザアニール方法を提供すること。【解決手段】非晶質シリコン膜に対してＣＷレーザ光を一定方向に相対移動させ、非晶質シリコン膜をラテラル結晶成長させて結晶化シリコン膜を形成するレーザアニール装置であって、光学系は、ＣＷレーザ光を、集光環を形成するレーザビームに整形するビーム整形部と、整形された環状のレーザビームを分割して反射することによって半環状のレーザビームを生成する反射面を有するビーム分割部とを有し、半環状のレーザビームの外周縁がレーザビームの相対移動方向に向くように、半環状のレーザビームを非晶質シリコン膜の被照射面に照射する。【選択図】図７</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2021111725A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | LASER ANNEALING DEVICE AND LASER ANNEALING METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T05%3A50%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SAWAI%20TAKUYA&rft.date=2021-08-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2021111725A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |