METHOD OF MANUFACTURING TRENCH GATE TYPE SWITCHING ELEMENT

To provide a technology capable of suppressing generation of crystal defects at an upper end of a trench.SOLUTION: A method of manufacturing a switching element includes first to eighth steps. At the first step, an n-type region exposed to an upper surface of a semiconductor substrate is formed in t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WATANABE YUKIHIKO, URAGAMI YASUSHI, OTSUBO HIROAKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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