METHOD FOR REMOVING GRAPHITE SUPPORT SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTAL SUBSTRATE
To provide a method for removing a graphite support substrate, capable of substantially reducing the removal time and power cost of the graphite support substrate compared with conventional one, for example, in a method capable of depositing SiC on the surface of a disk-like graphite support substra...
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| creator | TERAJIMA AKIRA |
| description | To provide a method for removing a graphite support substrate, capable of substantially reducing the removal time and power cost of the graphite support substrate compared with conventional one, for example, in a method capable of depositing SiC on the surface of a disk-like graphite support substrate by a CVD method and removing the graphite support substrate to obtain a SiC polycrystal substrate, and a method for manufacturing the silicon carbide polycrystal substrate.SOLUTION: The method for removing a graphite support substrate comprises: the contact step of contacting the graphite support substrate of a laminate including the graphite support substrate and a silicon carbide polycrystal film deposited on the surface of the graphite support substrate by chemical vapor deposition to alumina; and the heating step of heating the laminate having the graphite support substrate contacted to alumina at a temperature of 800-1000°C in the atmosphere.SELECTED DRAWING: Figure 2
【課題】例えば、ＣＶＤ法により円盤状の黒鉛製支持基板の表面にＳｉＣを析出させ、黒鉛製支持基板を除去してＳｉＣ多結晶基板を得る方法において、従来に比べて、大幅に黒鉛製支持基板の除去時間と電力コストを低減させることが可能な、黒鉛製支持基板の除去方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】黒鉛製支持基板と、化学蒸着により当該黒鉛製支持基板の表面に成膜した炭化珪素多結晶膜と、を備える積層体の前記黒鉛製支持基板とアルミナを接触させる接触工程と、前記黒鉛製支持基板とアルミナが接触した前記積層体を、大気中で８００℃〜１０００℃に加熱する加熱工程と、を含む黒鉛製支持基板の除去方法。【選択図】図２ |
| format | Patent |
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【課題】例えば、ＣＶＤ法により円盤状の黒鉛製支持基板の表面にＳｉＣを析出させ、黒鉛製支持基板を除去してＳｉＣ多結晶基板を得る方法において、従来に比べて、大幅に黒鉛製支持基板の除去時間と電力コストを低減させることが可能な、黒鉛製支持基板の除去方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】黒鉛製支持基板と、化学蒸着により当該黒鉛製支持基板の表面に成膜した炭化珪素多結晶膜と、を備える積層体の前記黒鉛製支持基板とアルミナを接触させる接触工程と、前記黒鉛製支持基板とアルミナが接触した前記積層体を、大気中で８００℃〜１０００℃に加熱する加熱工程と、を含む黒鉛製支持基板の除去方法。【選択図】図２</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210520&DB=EPODOC&CC=JP&NR=2021075767A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210520&DB=EPODOC&CC=JP&NR=2021075767A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TERAJIMA AKIRA</creatorcontrib><title>METHOD FOR REMOVING GRAPHITE SUPPORT SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTAL SUBSTRATE</title><description>To provide a method for removing a graphite support substrate, capable of substantially reducing the removal time and power cost of the graphite support substrate compared with conventional one, for example, in a method capable of depositing SiC on the surface of a disk-like graphite support substrate by a CVD method and removing the graphite support substrate to obtain a SiC polycrystal substrate, and a method for manufacturing the silicon carbide polycrystal substrate.SOLUTION: The method for removing a graphite support substrate comprises: the contact step of contacting the graphite support substrate of a laminate including the graphite support substrate and a silicon carbide polycrystal film deposited on the surface of the graphite support substrate by chemical vapor deposition to alumina; and the heating step of heating the laminate having the graphite support substrate contacted to alumina at a temperature of 800-1000°C in the atmosphere.SELECTED DRAWING: Figure 2
【課題】例えば、ＣＶＤ法により円盤状の黒鉛製支持基板の表面にＳｉＣを析出させ、黒鉛製支持基板を除去してＳｉＣ多結晶基板を得る方法において、従来に比べて、大幅に黒鉛製支持基板の除去時間と電力コストを低減させることが可能な、黒鉛製支持基板の除去方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】黒鉛製支持基板と、化学蒸着により当該黒鉛製支持基板の表面に成膜した炭化珪素多結晶膜と、を備える積層体の前記黒鉛製支持基板とアルミナを接触させる接触工程と、前記黒鉛製支持基板とアルミナが接触した前記積層体を、大気中で８００℃〜１０００℃に加熱する加熱工程と、を含む黒鉛製支持基板の除去方法。【選択図】図２</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbs4iPoPD3ehVjTza5q2kTYJL69Cp1IkTqKV-v9YQdDR6cDhnjuPHrXi0maQWwJStT1pU0BB6ErNCnzjnCWemHomnAyaDH6SGk2To-SG3p3XlZbWgERKdabA2aqV1HrG6nuxjGaX_jqG1YeLaJ0rluUmDPcujEN_Drfw7I4uiZNtLPbiIHD31-gF11E5QA</recordid><startdate>20210520</startdate><enddate>20210520</enddate><creator>TERAJIMA AKIRA</creator><scope>EVB</scope></search><sort><creationdate>20210520</creationdate><title>METHOD FOR REMOVING GRAPHITE SUPPORT SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTAL SUBSTRATE</title><author>TERAJIMA AKIRA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021075767A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TERAJIMA AKIRA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TERAJIMA AKIRA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR REMOVING GRAPHITE SUPPORT SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTAL SUBSTRATE</title><date>2021-05-20</date><risdate>2021</risdate><abstract>To provide a method for removing a graphite support substrate, capable of substantially reducing the removal time and power cost of the graphite support substrate compared with conventional one, for example, in a method capable of depositing SiC on the surface of a disk-like graphite support substrate by a CVD method and removing the graphite support substrate to obtain a SiC polycrystal substrate, and a method for manufacturing the silicon carbide polycrystal substrate.SOLUTION: The method for removing a graphite support substrate comprises: the contact step of contacting the graphite support substrate of a laminate including the graphite support substrate and a silicon carbide polycrystal film deposited on the surface of the graphite support substrate by chemical vapor deposition to alumina; and the heating step of heating the laminate having the graphite support substrate contacted to alumina at a temperature of 800-1000°C in the atmosphere.SELECTED DRAWING: Figure 2
【課題】例えば、ＣＶＤ法により円盤状の黒鉛製支持基板の表面にＳｉＣを析出させ、黒鉛製支持基板を除去してＳｉＣ多結晶基板を得る方法において、従来に比べて、大幅に黒鉛製支持基板の除去時間と電力コストを低減させることが可能な、黒鉛製支持基板の除去方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】黒鉛製支持基板と、化学蒸着により当該黒鉛製支持基板の表面に成膜した炭化珪素多結晶膜と、を備える積層体の前記黒鉛製支持基板とアルミナを接触させる接触工程と、前記黒鉛製支持基板とアルミナが接触した前記積層体を、大気中で８００℃〜１０００℃に加熱する加熱工程と、を含む黒鉛製支持基板の除去方法。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR REMOVING GRAPHITE SUPPORT SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTAL SUBSTRATE |
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