RESISTANCE ELEMENT AND ELECTRONIC APPARATUS
To increase the resistance of a resistance element formed on a semiconductor substrate.SOLUTION: A resistance element is formed on the surface of a semiconductor substrate. A protrusion is formed on the surface of the semiconductor substrate. The protrusion formed on the surface of the semiconductor...
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| creator | TOMITA TOMOHIRO HIRAI TOMOHIRO |
| description | To increase the resistance of a resistance element formed on a semiconductor substrate.SOLUTION: A resistance element is formed on the surface of a semiconductor substrate. A protrusion is formed on the surface of the semiconductor substrate. The protrusion formed on the surface of the semiconductor substrate has a step. The resistance element formed on the surface of the semiconductor substrate includes a resistance film. The resistance film provided by the resistance element is arranged adjacent to the protrusion on the surface of the semiconductor substrate. Also, the resistance film provided by the resistance element is arranged across the step at the protrusion.SELECTED DRAWING: Figure 2
【課題】半導体基板上に形成される抵抗素子を高抵抗化する。【解決手段】抵抗素子は、半導体基板の表面に形成される。その半導体基板の表面には突部が形成される。その半導体基板の表面に形成されるその突部は、段差を有する。その半導体基板の表面に形成される抵抗素子は、抵抗膜を具備する。その抵抗素子が具備するその抵抗膜は、その半導体基板の表面のその突部に隣接して配置される。また、その抵抗素子が具備するその抵抗膜は、その突部のその段差を横切って配置される。【選択図】図２ |
| format | Patent |
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【課題】半導体基板上に形成される抵抗素子を高抵抗化する。【解決手段】抵抗素子は、半導体基板の表面に形成される。その半導体基板の表面には突部が形成される。その半導体基板の表面に形成されるその突部は、段差を有する。その半導体基板の表面に形成される抵抗素子は、抵抗膜を具備する。その抵抗素子が具備するその抵抗膜は、その半導体基板の表面のその突部に隣接して配置される。また、その抵抗素子が具備するその抵抗膜は、その突部のその段差を横切って配置される。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; RESISTORS ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=JP&NR=2021072365A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=JP&NR=2021072365A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOMITA TOMOHIRO</creatorcontrib><creatorcontrib>HIRAI TOMOHIRO</creatorcontrib><title>RESISTANCE ELEMENT AND ELECTRONIC APPARATUS</title><description>To increase the resistance of a resistance element formed on a semiconductor substrate.SOLUTION: A resistance element is formed on the surface of a semiconductor substrate. A protrusion is formed on the surface of the semiconductor substrate. The protrusion formed on the surface of the semiconductor substrate has a step. The resistance element formed on the surface of the semiconductor substrate includes a resistance film. The resistance film provided by the resistance element is arranged adjacent to the protrusion on the surface of the semiconductor substrate. Also, the resistance film provided by the resistance element is arranged across the step at the protrusion.SELECTED DRAWING: Figure 2
【課題】半導体基板上に形成される抵抗素子を高抵抗化する。【解決手段】抵抗素子は、半導体基板の表面に形成される。その半導体基板の表面には突部が形成される。その半導体基板の表面に形成されるその突部は、段差を有する。その半導体基板の表面に形成される抵抗素子は、抵抗膜を具備する。その抵抗素子が具備するその抵抗膜は、その半導体基板の表面のその突部に隣接して配置される。また、その抵抗素子が具備するその抵抗膜は、その突部のその段差を横切って配置される。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>RESISTORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAOcg32DA5x9HN2VXD1cfV19QtRcPRzAbGdQ4L8_TydFRwDAhyDHENCg3kYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBkaGBuZGxmamjMVGKAMMqJWU</recordid><startdate>20210506</startdate><enddate>20210506</enddate><creator>TOMITA TOMOHIRO</creator><creator>HIRAI TOMOHIRO</creator><scope>EVB</scope></search><sort><creationdate>20210506</creationdate><title>RESISTANCE ELEMENT AND ELECTRONIC APPARATUS</title><author>TOMITA TOMOHIRO ; HIRAI TOMOHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021072365A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>RESISTORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TOMITA TOMOHIRO</creatorcontrib><creatorcontrib>HIRAI TOMOHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOMITA TOMOHIRO</au><au>HIRAI TOMOHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESISTANCE ELEMENT AND ELECTRONIC APPARATUS</title><date>2021-05-06</date><risdate>2021</risdate><abstract>To increase the resistance of a resistance element formed on a semiconductor substrate.SOLUTION: A resistance element is formed on the surface of a semiconductor substrate. A protrusion is formed on the surface of the semiconductor substrate. The protrusion formed on the surface of the semiconductor substrate has a step. The resistance element formed on the surface of the semiconductor substrate includes a resistance film. The resistance film provided by the resistance element is arranged adjacent to the protrusion on the surface of the semiconductor substrate. Also, the resistance film provided by the resistance element is arranged across the step at the protrusion.SELECTED DRAWING: Figure 2
【課題】半導体基板上に形成される抵抗素子を高抵抗化する。【解決手段】抵抗素子は、半導体基板の表面に形成される。その半導体基板の表面には突部が形成される。その半導体基板の表面に形成されるその突部は、段差を有する。その半導体基板の表面に形成される抵抗素子は、抵抗膜を具備する。その抵抗素子が具備するその抵抗膜は、その半導体基板の表面のその突部に隣接して配置される。また、その抵抗素子が具備するその抵抗膜は、その突部のその段差を横切って配置される。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY RESISTORS SEMICONDUCTOR DEVICES |
| title | RESISTANCE ELEMENT AND ELECTRONIC APPARATUS |
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