COMPOSITION FOR PROCESSING SEMICONDUCTOR AND PROCESSING METHOD

To provide a composition for processing a semiconductor, which is superior in storing stability, which can hold down the corrosion of a metal wire of a workpiece, etc. that the composition will bring about, and which can remove the pollution of the workpiece surface therefrom effectively, and a proc...

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Bibliographische Detailangaben
1. Verfasser:	MITSUMOTO KIYOTAKA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY DETERGENT COMPOSITIONS DETERGENTS DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING TRANSPORTING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	To provide a composition for processing a semiconductor, which is superior in storing stability, which can hold down the corrosion of a metal wire of a workpiece, etc. that the composition will bring about, and which can remove the pollution of the workpiece surface therefrom effectively, and a processing method arranged to use the composition.SOLUTION: A composition for processing a semiconductor according to the present invention comprises (A) at least one kind selected from a group consisting of cyclodextrin and a cyclodextrin derivative, (B) a compound having a dipolar ion structure, (C)a liquid medium. When a content of the component (A) is MA[mass%], and a content of the component (B) is MB[mass%], MA/MB=3-15.SELECTED DRAWING: None 【課題】貯蔵安定性に優れ、被処理体の金属配線等に与える腐食を抑制し、被処理体の表面より汚染を効果的に除去できる半導体処理用組成物、及びそれを用いた処理方法を提供すること。【解決手段】本発明に係る半導体処理用組成物は、（Ａ）シクロデキストリン及びシクロデキストリン誘導体よりなる群から選ばれる少なくとも１種と、（Ｂ）双性イオン構造を有する化合物と、（Ｃ）液状媒体と、を含有し、前記（Ａ）成分の含有量をＭＡ［質量％］、前記（Ｂ）成分の含有量をＭＢ［質量％］としたときに、ＭＡ／ＭＢ＝３〜１５である。【選択図】なし