BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD OF THE SAME

BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD OF THE SAME

To provide a bulk acoustic wave resonator that can form a piezoelectric film on a surface of a lower layer electrode with a flat surface and improve its characteristics.SOLUTION: The bulk acoustic wave resonator includes a support substrate and a lower layer electrode film 2, a piezoelectric film 3,...

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Hauptverfasser: TAKEUCHI OSAMU, MASUMOTO NAOMI, KIKUCHI TOSHIKATSU, KOUCHI HIROYUKI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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creator TAKEUCHI OSAMU
MASUMOTO NAOMI
KIKUCHI TOSHIKATSU
KOUCHI HIROYUKI
description To provide a bulk acoustic wave resonator that can form a piezoelectric film on a surface of a lower layer electrode with a flat surface and improve its characteristics.SOLUTION: The bulk acoustic wave resonator includes a support substrate and a lower layer electrode film 2, a piezoelectric film 3, and an upper layer electrode film 4 stacked on the support substrate. The lower layer electrode film 2 has a flat surface. The piezoelectric film 3 is stacked on the lower electrode film 2. A recess 7 is provided on a surface of the periphery, and a part of the surface is cut out. The upper layer electrode film 4 covers the recess 7 and is stacked on top of the piezoelectric film 3.SELECTED DRAWING: Figure 5 【課題】平坦な表面を有する下層電極表面に圧電膜を形成し、特性向上を図ることができるバルク弾性波共振器を提供する。【解決手段】支持基板と、該支持基板上に積層した下層電極膜２、圧電膜３および上層電極膜４とを備えたバルク弾性波共振器において、下層電極膜２は表面が平坦であり、圧電膜３は下層電極膜２上に積層し、周縁部の表面に、該表面の一部を切り欠いた凹部７を備え、上層電極膜４は凹部７を被覆し、圧電膜３上に積層する。【選択図】図５
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The lower layer electrode film 2 has a flat surface. The piezoelectric film 3 is stacked on the lower electrode film 2. A recess 7 is provided on a surface of the periphery, and a part of the surface is cut out. The upper layer electrode film 4 covers the recess 7 and is stacked on top of the piezoelectric film 3.SELECTED DRAWING: Figure 5 【課題】平坦な表面を有する下層電極表面に圧電膜を形成し、特性向上を図ることができるバルク弾性波共振器を提供する。【解決手段】支持基板と、該支持基板上に積層した下層電極膜２、圧電膜３および上層電極膜４とを備えたバルク弾性波共振器において、下層電極膜２は表面が平坦であり、圧電膜３は下層電極膜２上に積層し、周縁部の表面に、該表面の一部を切り欠いた凹部７を備え、上層電極膜４は凹部７を被覆し、圧電膜３上に積層する。【選択図】図５</description><language>eng ; jpn</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210408&amp;DB=EPODOC&amp;CC=JP&amp;NR=2021057797A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210408&amp;DB=EPODOC&amp;CC=JP&amp;NR=2021057797A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEUCHI OSAMU</creatorcontrib><creatorcontrib>MASUMOTO NAOMI</creatorcontrib><creatorcontrib>KIKUCHI TOSHIKATSU</creatorcontrib><creatorcontrib>KOUCHI HIROYUKI</creatorcontrib><title>BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD OF THE SAME</title><description>To provide a bulk acoustic wave resonator that can form a piezoelectric film on a surface of a lower layer electrode with a flat surface and improve its characteristics.SOLUTION: The bulk acoustic wave resonator includes a support substrate and a lower layer electrode film 2, a piezoelectric film 3, and an upper layer electrode film 4 stacked on the support substrate. 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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD OF THE SAME
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