METHOD FOR PROCESSING SURFACE OF GRAPHITE SUPPORT SUBSTRATE, METHOD FOR DEPOSITING SILICON CARBIDE POLYCRYSTALLINE FILM AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTALLINE SUBSTRATE

To provide a method for processing a surface of a graphite support substrate, a method for depositing a silicon carbide polycrystalline film and a method for manufacturing a silicon carbide polycrystalline substrate, which can suppress warpage of a silicon carbide polycrystalline substrate.SOLUTION:...

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1. Verfasser:	NISHIMURA EIICHIRO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	To provide a method for processing a surface of a graphite support substrate, a method for depositing a silicon carbide polycrystalline film and a method for manufacturing a silicon carbide polycrystalline substrate, which can suppress warpage of a silicon carbide polycrystalline substrate.SOLUTION: A method for processing a surface of a graphite support substrate includes a fragile layer depositing step of applying blast processing to a film deposition object surface of a graphite support substrate and depositing a fragile layer with an average thickness of 0.1-1.0 μm.SELECTED DRAWING: Figure 1 【課題】炭化珪素多結晶基板の反りを抑制することができる、黒鉛製支持基板の表面処理方法、炭化珪素多結晶膜の成膜方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】黒鉛製支持基板の成膜対象面にブラスト処理し、平均厚み０．１〜１．０μｍの脆弱層を形成する脆弱層形成工程を含む、黒鉛製支持基板の表面処理方法。【選択図】図１