VACUUM PROCESS DEVICE AND METHOD OF COOLING PROCESS OBJECT IN VACUUM PROCESS DEVICE
To provide a vacuum process device and a method of cooling a process object in the vacuum process device that easily maintain a seal and a process vacuum degree, are efficiently applied even when the process object rotates at a high speed and moves at a high speed in a vacuum chamber, and also can p...
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| creator | HAN HIN NAGAIE TAKEHIKO ZHANG YONGLIN JEONG GUK BU USUKI TORU |
| description | To provide a vacuum process device and a method of cooling a process object in the vacuum process device that easily maintain a seal and a process vacuum degree, are efficiently applied even when the process object rotates at a high speed and moves at a high speed in a vacuum chamber, and also can perform efficient cooling.SOLUTION: A vacuum process device has: a vacuum chamber 10; a heating source 20 which heats and supplies a process material; a process object 30 which is arranged in the vacuum chamber 10 with a process object surface 301 opposed to the side of a process material supply part 200, and supplied with the process material to have a predetermined object formed; a cooling plate 40 which has a first surface 401 and a second surface 402, and is arranged in the vacuum chamber 10 such that the first surface 401 faces a non-process object surface 302 on the opposite side from the process object surface 301 of the process object 30; and a heat radiation sheet 50 which is arranged on the first surface 401 of the cooling plate 40.SELECTED DRAWING: Figure 2
【課題】シールの維持やプロセス真空度の維持が容易で、プロセス対象物が真空チャンバ内で高速回転や高速移動をする場合にも効率よく適用でき、しかも効率の良い冷却を実現することが可能な真空プロセス装置およびプロセス対象物の冷却方法を提供する。【解決手段】真空プロセス装置は、真空チャンバ１０と、プロセス材料を加熱して供給する加熱源２０と、真空チャンバ１０内に、プロセス対象面３０１がプロセス材料供給部２００側に臨むように配置され、プロセス材料が供給されて所定の対象物が形成されるプロセス対象物３０と、第１面４０１と第２面４０２とを有し、真空チャンバ１０内に、第１面４０１がプロセス対象物３０のプロセス対象面３０１と反対側の非プロセス対象面３０２と対向するように配置された冷却プレート４０と、冷却プレート４０の第１面４０１に配置された熱放射シート５０とを有する。【選択図】図２ |
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【課題】シールの維持やプロセス真空度の維持が容易で、プロセス対象物が真空チャンバ内で高速回転や高速移動をする場合にも効率よく適用でき、しかも効率の良い冷却を実現することが可能な真空プロセス装置およびプロセス対象物の冷却方法を提供する。【解決手段】真空プロセス装置は、真空チャンバ１０と、プロセス材料を加熱して供給する加熱源２０と、真空チャンバ１０内に、プロセス対象面３０１がプロセス材料供給部２００側に臨むように配置され、プロセス材料が供給されて所定の対象物が形成されるプロセス対象物３０と、第１面４０１と第２面４０２とを有し、真空チャンバ１０内に、第１面４０１がプロセス対象物３０のプロセス対象面３０１と反対側の非プロセス対象面３０２と対向するように配置された冷却プレート４０と、冷却プレート４０の第１面４０１に配置された熱放射シート５０とを有する。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210301&DB=EPODOC&CC=JP&NR=2021031694A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210301&DB=EPODOC&CC=JP&NR=2021031694A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAN HIN</creatorcontrib><creatorcontrib>NAGAIE TAKEHIKO</creatorcontrib><creatorcontrib>ZHANG YONGLIN</creatorcontrib><creatorcontrib>JEONG GUK BU</creatorcontrib><creatorcontrib>USUKI TORU</creatorcontrib><title>VACUUM PROCESS DEVICE AND METHOD OF COOLING PROCESS OBJECT IN VACUUM PROCESS DEVICE</title><description>To provide a vacuum process device and a method of cooling a process object in the vacuum process device that easily maintain a seal and a process vacuum degree, are efficiently applied even when the process object rotates at a high speed and moves at a high speed in a vacuum chamber, and also can perform efficient cooling.SOLUTION: A vacuum process device has: a vacuum chamber 10; a heating source 20 which heats and supplies a process material; a process object 30 which is arranged in the vacuum chamber 10 with a process object surface 301 opposed to the side of a process material supply part 200, and supplied with the process material to have a predetermined object formed; a cooling plate 40 which has a first surface 401 and a second surface 402, and is arranged in the vacuum chamber 10 such that the first surface 401 faces a non-process object surface 302 on the opposite side from the process object surface 301 of the process object 30; and a heat radiation sheet 50 which is arranged on the first surface 401 of the cooling plate 40.SELECTED DRAWING: Figure 2
【課題】シールの維持やプロセス真空度の維持が容易で、プロセス対象物が真空チャンバ内で高速回転や高速移動をする場合にも効率よく適用でき、しかも効率の良い冷却を実現することが可能な真空プロセス装置およびプロセス対象物の冷却方法を提供する。【解決手段】真空プロセス装置は、真空チャンバ１０と、プロセス材料を加熱して供給する加熱源２０と、真空チャンバ１０内に、プロセス対象面３０１がプロセス材料供給部２００側に臨むように配置され、プロセス材料が供給されて所定の対象物が形成されるプロセス対象物３０と、第１面４０１と第２面４０２とを有し、真空チャンバ１０内に、第１面４０１がプロセス対象物３０のプロセス対象面３０１と反対側の非プロセス対象面３０２と対向するように配置された冷却プレート４０と、冷却プレート４０の第１面４０１に配置された熱放射シート５０とを有する。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgOc3QODfVVCAjyd3YNDlZwcQ3zdHZVcPRzUfB1DfHwd1Hwd1Nw9vf38fRzhyvyd_JydQ5R8PRTwKqbh4E1LTGnOJUXSnMzKLm5hjh76KYW5MenFhckJqfmpZbEewUYGRgZGhgbmlmaOBoTpQgAPZ4wBw</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>HAN HIN</creator><creator>NAGAIE TAKEHIKO</creator><creator>ZHANG YONGLIN</creator><creator>JEONG GUK BU</creator><creator>USUKI TORU</creator><scope>EVB</scope></search><sort><creationdate>20210301</creationdate><title>VACUUM PROCESS DEVICE AND METHOD OF COOLING PROCESS OBJECT IN VACUUM PROCESS DEVICE</title><author>HAN HIN ; NAGAIE TAKEHIKO ; ZHANG YONGLIN ; JEONG GUK BU ; USUKI TORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021031694A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HAN HIN</creatorcontrib><creatorcontrib>NAGAIE TAKEHIKO</creatorcontrib><creatorcontrib>ZHANG YONGLIN</creatorcontrib><creatorcontrib>JEONG GUK BU</creatorcontrib><creatorcontrib>USUKI TORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAN HIN</au><au>NAGAIE TAKEHIKO</au><au>ZHANG YONGLIN</au><au>JEONG GUK BU</au><au>USUKI TORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VACUUM PROCESS DEVICE AND METHOD OF COOLING PROCESS OBJECT IN VACUUM PROCESS DEVICE</title><date>2021-03-01</date><risdate>2021</risdate><abstract>To provide a vacuum process device and a method of cooling a process object in the vacuum process device that easily maintain a seal and a process vacuum degree, are efficiently applied even when the process object rotates at a high speed and moves at a high speed in a vacuum chamber, and also can perform efficient cooling.SOLUTION: A vacuum process device has: a vacuum chamber 10; a heating source 20 which heats and supplies a process material; a process object 30 which is arranged in the vacuum chamber 10 with a process object surface 301 opposed to the side of a process material supply part 200, and supplied with the process material to have a predetermined object formed; a cooling plate 40 which has a first surface 401 and a second surface 402, and is arranged in the vacuum chamber 10 such that the first surface 401 faces a non-process object surface 302 on the opposite side from the process object surface 301 of the process object 30; and a heat radiation sheet 50 which is arranged on the first surface 401 of the cooling plate 40.SELECTED DRAWING: Figure 2
【課題】シールの維持やプロセス真空度の維持が容易で、プロセス対象物が真空チャンバ内で高速回転や高速移動をする場合にも効率よく適用でき、しかも効率の良い冷却を実現することが可能な真空プロセス装置およびプロセス対象物の冷却方法を提供する。【解決手段】真空プロセス装置は、真空チャンバ１０と、プロセス材料を加熱して供給する加熱源２０と、真空チャンバ１０内に、プロセス対象面３０１がプロセス材料供給部２００側に臨むように配置され、プロセス材料が供給されて所定の対象物が形成されるプロセス対象物３０と、第１面４０１と第２面４０２とを有し、真空チャンバ１０内に、第１面４０１がプロセス対象物３０のプロセス対象面３０１と反対側の非プロセス対象面３０２と対向するように配置された冷却プレート４０と、冷却プレート４０の第１面４０１に配置された熱放射シート５０とを有する。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | VACUUM PROCESS DEVICE AND METHOD OF COOLING PROCESS OBJECT IN VACUUM PROCESS DEVICE |
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