SEMICONDUCTOR LASER
To provide a semiconductor laser generating ultrashort pulses.SOLUTION: A semiconductor laser includes: an optical resonator that has a first compound semiconductor layer containing n-type impurities, a second compound semiconductor layer containing p-type impurities, and a light-emitting layer prov...
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| creator | NAKAMURA NARUHIRO KURODA TAKANOSUKE AKIYAMA HIDEFUMI KIM CHANGSU NAKAMAE HIDEKAZU ITO TAKASHI |
| description | To provide a semiconductor laser generating ultrashort pulses.SOLUTION: A semiconductor laser includes: an optical resonator that has a first compound semiconductor layer containing n-type impurities, a second compound semiconductor layer containing p-type impurities, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and pulse injection means that injects excitation energy over sub-nanosecond durations into the optical resonator. The light-emitting layer has an at least five-period multiple quantum well structure, and generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.SELECTED DRAWING: Figure 6
【課題】超短パルスを発生する半導体レーザを提供する。【解決手段】ｎ型不純物を含有する第１化合物半導体層と、ｐ型不純物を含有する第２化合物半導体層と、第１化合物半導体層および第２化合物半導体層の間に設けられる発光層と、を有する光共振器と、光共振器に対して、サブナノ秒の時間幅で励起エネルギーを注入するパルス注入手段と、を備え、発光層は、５周期以上の多重量子井戸構造を有し、光共振器の光子寿命の２．５倍よりも短いパルス幅で光パルスを発生する半導体レーザ。【選択図】図６ |
| format | Patent |
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【課題】超短パルスを発生する半導体レーザを提供する。【解決手段】ｎ型不純物を含有する第１化合物半導体層と、ｐ型不純物を含有する第２化合物半導体層と、第１化合物半導体層および第２化合物半導体層の間に設けられる発光層と、を有する光共振器と、光共振器に対して、サブナノ秒の時間幅で励起エネルギーを注入するパルス注入手段と、を備え、発光層は、５周期以上の多重量子井戸構造を有し、光共振器の光子寿命の２．５倍よりも短いパルス幅で光パルスを発生する半導体レーザ。【選択図】図６</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210114&DB=EPODOC&CC=JP&NR=2021005596A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210114&DB=EPODOC&CC=JP&NR=2021005596A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAMURA NARUHIRO</creatorcontrib><creatorcontrib>KURODA TAKANOSUKE</creatorcontrib><creatorcontrib>AKIYAMA HIDEFUMI</creatorcontrib><creatorcontrib>KIM CHANGSU</creatorcontrib><creatorcontrib>NAKAMAE HIDEKAZU</creatorcontrib><creatorcontrib>ITO TAKASHI</creatorcontrib><title>SEMICONDUCTOR LASER</title><description>To provide a semiconductor laser generating ultrashort pulses.SOLUTION: A semiconductor laser includes: an optical resonator that has a first compound semiconductor layer containing n-type impurities, a second compound semiconductor layer containing p-type impurities, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and pulse injection means that injects excitation energy over sub-nanosecond durations into the optical resonator. The light-emitting layer has an at least five-period multiple quantum well structure, and generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.SELECTED DRAWING: Figure 6
【課題】超短パルスを発生する半導体レーザを提供する。【解決手段】ｎ型不純物を含有する第１化合物半導体層と、ｐ型不純物を含有する第２化合物半導体層と、第１化合物半導体層および第２化合物半導体層の間に設けられる発光層と、を有する光共振器と、光共振器に対して、サブナノ秒の時間幅で励起エネルギーを注入するパルス注入手段と、を備え、発光層は、５周期以上の多重量子井戸構造を有し、光共振器の光子寿命の２．５倍よりも短いパルス幅で光パルスを発生する半導体レーザ。【選択図】図６</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAOdvX1dPb3cwl1DvEPUvBxDHYN4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZGhgYGpqaWZo7GRCkCAKKpHuA</recordid><startdate>20210114</startdate><enddate>20210114</enddate><creator>NAKAMURA NARUHIRO</creator><creator>KURODA TAKANOSUKE</creator><creator>AKIYAMA HIDEFUMI</creator><creator>KIM CHANGSU</creator><creator>NAKAMAE HIDEKAZU</creator><creator>ITO TAKASHI</creator><scope>EVB</scope></search><sort><creationdate>20210114</creationdate><title>SEMICONDUCTOR LASER</title><author>NAKAMURA NARUHIRO ; KURODA TAKANOSUKE ; AKIYAMA HIDEFUMI ; KIM CHANGSU ; NAKAMAE HIDEKAZU ; ITO TAKASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021005596A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAMURA NARUHIRO</creatorcontrib><creatorcontrib>KURODA TAKANOSUKE</creatorcontrib><creatorcontrib>AKIYAMA HIDEFUMI</creatorcontrib><creatorcontrib>KIM CHANGSU</creatorcontrib><creatorcontrib>NAKAMAE HIDEKAZU</creatorcontrib><creatorcontrib>ITO TAKASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAMURA NARUHIRO</au><au>KURODA TAKANOSUKE</au><au>AKIYAMA HIDEFUMI</au><au>KIM CHANGSU</au><au>NAKAMAE HIDEKAZU</au><au>ITO TAKASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LASER</title><date>2021-01-14</date><risdate>2021</risdate><abstract>To provide a semiconductor laser generating ultrashort pulses.SOLUTION: A semiconductor laser includes: an optical resonator that has a first compound semiconductor layer containing n-type impurities, a second compound semiconductor layer containing p-type impurities, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and pulse injection means that injects excitation energy over sub-nanosecond durations into the optical resonator. The light-emitting layer has an at least five-period multiple quantum well structure, and generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.SELECTED DRAWING: Figure 6
【課題】超短パルスを発生する半導体レーザを提供する。【解決手段】ｎ型不純物を含有する第１化合物半導体層と、ｐ型不純物を含有する第２化合物半導体層と、第１化合物半導体層および第２化合物半導体層の間に設けられる発光層と、を有する光共振器と、光共振器に対して、サブナノ秒の時間幅で励起エネルギーを注入するパルス注入手段と、を備え、発光層は、５周期以上の多重量子井戸構造を有し、光共振器の光子寿命の２．５倍よりも短いパルス幅で光パルスを発生する半導体レーザ。【選択図】図６</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
| title | SEMICONDUCTOR LASER |
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