VAPOR DEPOSITION SOURCE, VACUUM PROCESSING APPARATUS AND VAPOR DEPOSITION METHOD
To provide: a vapor deposition source, vacuum processing apparatus and vapor deposition method, capable of reducing a heat load on a vapor deposition material to achieve a stable vapor deposition speed.SOLUTION: The vapor deposition source includes an evaporation vessel and a heating mechanism. The...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | UMEHARA SEIJI |
| description | To provide: a vapor deposition source, vacuum processing apparatus and vapor deposition method, capable of reducing a heat load on a vapor deposition material to achieve a stable vapor deposition speed.SOLUTION: The vapor deposition source includes an evaporation vessel and a heating mechanism. The evaporation vessel includes a vessel main body for storing a vapor deposition material and a top plate closing the vessel main body and having an ejection nozzle for ejecting the vapor deposition material. The heating mechanism faces the vessel main body through the top plate and heats the vapor deposition material. The height of the evaporation surface of the vapor deposition material is automatically controlled so as to keep a distance between the evaporation surface and the top plate in an allowable range.SELECTED DRAWING: Figure 1
【課題】蒸着材料への熱負荷が軽減され、安定した蒸着速度を可能にする蒸着源、真空処理装置、及び蒸着方法を提供すること。【解決手段】本発明の一形態に係る蒸着源は、蒸発容器と、加熱機構とを具備する。上記蒸発容器は、蒸着材料を収容する容器本体と、上記容器本体を閉塞し上記蒸着材料が噴出可能な噴出ノズルが設けられた天板とを有する。上記加熱機構は、上記天板を介して上記容器本体に対向し、上記蒸着材料を加熱する。上記蒸着材料の蒸発面と上記天板との間の距離が許容範囲に収まるように上記蒸発面の高さが自動的に調整される。【選択図】図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2020180333A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2020180333A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2020180333A3</originalsourceid><addsrcrecordid>eNrjZAgIcwzwD1JwcQ3wD_YM8fT3Uwj2Dw1ydtVRCHN0Dg31VQgI8nd2DQ729HNXcAwIcAxyDAkNVnD0c1HA0OjrGuLh78LDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMjAwMLQyMjY0djYlSBAAGyS_T</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VAPOR DEPOSITION SOURCE, VACUUM PROCESSING APPARATUS AND VAPOR DEPOSITION METHOD</title><source>esp@cenet</source><creator>UMEHARA SEIJI</creator><creatorcontrib>UMEHARA SEIJI</creatorcontrib><description>To provide: a vapor deposition source, vacuum processing apparatus and vapor deposition method, capable of reducing a heat load on a vapor deposition material to achieve a stable vapor deposition speed.SOLUTION: The vapor deposition source includes an evaporation vessel and a heating mechanism. The evaporation vessel includes a vessel main body for storing a vapor deposition material and a top plate closing the vessel main body and having an ejection nozzle for ejecting the vapor deposition material. The heating mechanism faces the vessel main body through the top plate and heats the vapor deposition material. The height of the evaporation surface of the vapor deposition material is automatically controlled so as to keep a distance between the evaporation surface and the top plate in an allowable range.SELECTED DRAWING: Figure 1
【課題】蒸着材料への熱負荷が軽減され、安定した蒸着速度を可能にする蒸着源、真空処理装置、及び蒸着方法を提供すること。【解決手段】本発明の一形態に係る蒸着源は、蒸発容器と、加熱機構とを具備する。上記蒸発容器は、蒸着材料を収容する容器本体と、上記容器本体を閉塞し上記蒸着材料が噴出可能な噴出ノズルが設けられた天板とを有する。上記加熱機構は、上記天板を介して上記容器本体に対向し、上記蒸着材料を加熱する。上記蒸着材料の蒸発面と上記天板との間の距離が許容範囲に収まるように上記蒸発面の高さが自動的に調整される。【選択図】図１</description><language>eng ; jpn</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201105&DB=EPODOC&CC=JP&NR=2020180333A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201105&DB=EPODOC&CC=JP&NR=2020180333A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UMEHARA SEIJI</creatorcontrib><title>VAPOR DEPOSITION SOURCE, VACUUM PROCESSING APPARATUS AND VAPOR DEPOSITION METHOD</title><description>To provide: a vapor deposition source, vacuum processing apparatus and vapor deposition method, capable of reducing a heat load on a vapor deposition material to achieve a stable vapor deposition speed.SOLUTION: The vapor deposition source includes an evaporation vessel and a heating mechanism. The evaporation vessel includes a vessel main body for storing a vapor deposition material and a top plate closing the vessel main body and having an ejection nozzle for ejecting the vapor deposition material. The heating mechanism faces the vessel main body through the top plate and heats the vapor deposition material. The height of the evaporation surface of the vapor deposition material is automatically controlled so as to keep a distance between the evaporation surface and the top plate in an allowable range.SELECTED DRAWING: Figure 1
【課題】蒸着材料への熱負荷が軽減され、安定した蒸着速度を可能にする蒸着源、真空処理装置、及び蒸着方法を提供すること。【解決手段】本発明の一形態に係る蒸着源は、蒸発容器と、加熱機構とを具備する。上記蒸発容器は、蒸着材料を収容する容器本体と、上記容器本体を閉塞し上記蒸着材料が噴出可能な噴出ノズルが設けられた天板とを有する。上記加熱機構は、上記天板を介して上記容器本体に対向し、上記蒸着材料を加熱する。上記蒸着材料の蒸発面と上記天板との間の距離が許容範囲に収まるように上記蒸発面の高さが自動的に調整される。【選択図】図１</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgIcwzwD1JwcQ3wD_YM8fT3Uwj2Dw1ydtVRCHN0Dg31VQgI8nd2DQ729HNXcAwIcAxyDAkNVnD0c1HA0OjrGuLh78LDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMjAwMLQyMjY0djYlSBAAGyS_T</recordid><startdate>20201105</startdate><enddate>20201105</enddate><creator>UMEHARA SEIJI</creator><scope>EVB</scope></search><sort><creationdate>20201105</creationdate><title>VAPOR DEPOSITION SOURCE, VACUUM PROCESSING APPARATUS AND VAPOR DEPOSITION METHOD</title><author>UMEHARA SEIJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020180333A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>UMEHARA SEIJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UMEHARA SEIJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VAPOR DEPOSITION SOURCE, VACUUM PROCESSING APPARATUS AND VAPOR DEPOSITION METHOD</title><date>2020-11-05</date><risdate>2020</risdate><abstract>To provide: a vapor deposition source, vacuum processing apparatus and vapor deposition method, capable of reducing a heat load on a vapor deposition material to achieve a stable vapor deposition speed.SOLUTION: The vapor deposition source includes an evaporation vessel and a heating mechanism. The evaporation vessel includes a vessel main body for storing a vapor deposition material and a top plate closing the vessel main body and having an ejection nozzle for ejecting the vapor deposition material. The heating mechanism faces the vessel main body through the top plate and heats the vapor deposition material. The height of the evaporation surface of the vapor deposition material is automatically controlled so as to keep a distance between the evaporation surface and the top plate in an allowable range.SELECTED DRAWING: Figure 1
【課題】蒸着材料への熱負荷が軽減され、安定した蒸着速度を可能にする蒸着源、真空処理装置、及び蒸着方法を提供すること。【解決手段】本発明の一形態に係る蒸着源は、蒸発容器と、加熱機構とを具備する。上記蒸発容器は、蒸着材料を収容する容器本体と、上記容器本体を閉塞し上記蒸着材料が噴出可能な噴出ノズルが設けられた天板とを有する。上記加熱機構は、上記天板を介して上記容器本体に対向し、上記蒸着材料を加熱する。上記蒸着材料の蒸発面と上記天板との間の距離が許容範囲に収まるように上記蒸発面の高さが自動的に調整される。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2020180333A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | VAPOR DEPOSITION SOURCE, VACUUM PROCESSING APPARATUS AND VAPOR DEPOSITION METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T04%3A45%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=UMEHARA%20SEIJI&rft.date=2020-11-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2020180333A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |