SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

To provide a method for manufacturing a semiconductor device, capable of improving a film deposition rate.SOLUTION: The method for manufacturing a semiconductor device comprises: introducing a first gas including a first element served as a film deposition material into a chamber storing a substrate...

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Bibliographische Detailangaben
Hauptverfasser:	ARIGA TOMOTAKA, BEPPU TAKAYUKI, KITAMURA MASAYUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a method for manufacturing a semiconductor device, capable of improving a film deposition rate.SOLUTION: The method for manufacturing a semiconductor device comprises: introducing a first gas including a first element served as a film deposition material into a chamber storing a substrate; exhausting the first gas from the chamber using purge gas; introducing a second gas reducing the first gas into the chamber; exhausting the second gas from the chamber using the purge gas; and introducing a third gas different from the first gas, the second gas and the purge gas into the chamber at least either when exhausting the first gas or when exhausting the second gas.SELECTED DRAWING: Figure 1 【課題】成膜速度を向上させることが可能な半導体装置の製造方法を提供する。【解決手段】一実施形態に係る半導体装置の製造方法は、基板を収容したチャンバー内に、成膜材料となる第１元素を含む第１ガスを導入する。次に、パージガスを用いて第１ガスをチャンバー内から排気する。次に、第１ガスを還元する第２ガスをチャンバー内に導入する。次に、パージガスを用いて第２ガスをチャンバーから排気する。さらに、第１ガスの排気時および第２ガスの排気時の少なくとも一方で、第１ガス、第２ガス、およびパージガスとは異なる第３ガスをチャンバー内に導入する。【選択図】図１