THIN FILM MAGNETOSTRICTOR AND METHOD FOR MANUFACTURING THE SAME
To provide a thin film magnetostrictor having a high magnetic strain λs even if being applied to a thin film having a small thickness.SOLUTION: A thin film magnetostrictor has a thin film. The thin film contains Fe, Co, Tb and O primarily. The thin film has a surface-inclined composition film, an in...
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| description | To provide a thin film magnetostrictor having a high magnetic strain λs even if being applied to a thin film having a small thickness.SOLUTION: A thin film magnetostrictor has a thin film. The thin film contains Fe, Co, Tb and O primarily. The thin film has a surface-inclined composition film, an inside-uniform composition film, and an inside-inclined composition film. The inside-inclined composition film, the inside-uniform composition film and the surface-inclined composition film are located in this order from a substrate on which the thin film is formed toward an outermost surface of the thin film. The inside-uniform composition film is in contact with the inside-inclined composition film and the surface-inclined composition film. When the atomic number ratio calculated by (Co concentration+Fe concentration)/(Tb concentration) is represented by (Co,Fe)/Tb, the average value of (Co,Fe)/Tb in the inside-uniform composition film is 4.0 or more and 6.0 or less. The maximum of (Co,Fe)/Tb in the inside-inclined composition film is over 100.SELECTED DRAWING: Figure 2
【課題】 膜厚が小さい薄膜に適用する場合でも高い磁歪λｓを持つ薄膜磁歪素子を提供することを目的とする。【解決手段】 薄膜を有する薄膜磁歪素子である。薄膜はＦｅ，Ｃｏ，ＴｂおよびＯを主に含む。薄膜が表面傾斜組成膜と、内部均一組成膜と、内部傾斜組成膜と、を有する。薄膜が形成される基板から薄膜の最表面に向かって、内部傾斜組成膜、内部均一組成膜、表面傾斜組成膜の順番に位置する。内部均一組成膜は、内部傾斜組成膜および表面傾斜組成膜と接する。（Ｃｏ濃度＋Ｆｅ濃度）／（Ｔｂ濃度）で算出される原子数比を（Ｃｏ，Ｆｅ）／Ｔｂとして、内部均一組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの平均値が４．０以上６．０以下である。内部傾斜組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの最大値が１００を超える。【選択図】 図２ |
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【課題】 膜厚が小さい薄膜に適用する場合でも高い磁歪λｓを持つ薄膜磁歪素子を提供することを目的とする。【解決手段】 薄膜を有する薄膜磁歪素子である。薄膜はＦｅ，Ｃｏ，ＴｂおよびＯを主に含む。薄膜が表面傾斜組成膜と、内部均一組成膜と、内部傾斜組成膜と、を有する。薄膜が形成される基板から薄膜の最表面に向かって、内部傾斜組成膜、内部均一組成膜、表面傾斜組成膜の順番に位置する。内部均一組成膜は、内部傾斜組成膜および表面傾斜組成膜と接する。（Ｃｏ濃度＋Ｆｅ濃度）／（Ｔｂ濃度）で算出される原子数比を（Ｃｏ，Ｆｅ）／Ｔｂとして、内部均一組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの平均値が４．０以上６．０以下である。内部傾斜組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの最大値が１００を超える。【選択図】 図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INDUCTANCES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MAGNETS ; METALLURGY ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSFORMERS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200910&DB=EPODOC&CC=JP&NR=2020145377A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200910&DB=EPODOC&CC=JP&NR=2020145377A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KO KINTO</creatorcontrib><title>THIN FILM MAGNETOSTRICTOR AND METHOD FOR MANUFACTURING THE SAME</title><description>To provide a thin film magnetostrictor having a high magnetic strain λs even if being applied to a thin film having a small thickness.SOLUTION: A thin film magnetostrictor has a thin film. The thin film contains Fe, Co, Tb and O primarily. The thin film has a surface-inclined composition film, an inside-uniform composition film, and an inside-inclined composition film. The inside-inclined composition film, the inside-uniform composition film and the surface-inclined composition film are located in this order from a substrate on which the thin film is formed toward an outermost surface of the thin film. The inside-uniform composition film is in contact with the inside-inclined composition film and the surface-inclined composition film. When the atomic number ratio calculated by (Co concentration+Fe concentration)/(Tb concentration) is represented by (Co,Fe)/Tb, the average value of (Co,Fe)/Tb in the inside-uniform composition film is 4.0 or more and 6.0 or less. The maximum of (Co,Fe)/Tb in the inside-inclined composition film is over 100.SELECTED DRAWING: Figure 2
【課題】 膜厚が小さい薄膜に適用する場合でも高い磁歪λｓを持つ薄膜磁歪素子を提供することを目的とする。【解決手段】 薄膜を有する薄膜磁歪素子である。薄膜はＦｅ，Ｃｏ，ＴｂおよびＯを主に含む。薄膜が表面傾斜組成膜と、内部均一組成膜と、内部傾斜組成膜と、を有する。薄膜が形成される基板から薄膜の最表面に向かって、内部傾斜組成膜、内部均一組成膜、表面傾斜組成膜の順番に位置する。内部均一組成膜は、内部傾斜組成膜および表面傾斜組成膜と接する。（Ｃｏ濃度＋Ｆｅ濃度）／（Ｔｂ濃度）で算出される原子数比を（Ｃｏ，Ｆｅ）／Ｔｂとして、内部均一組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの平均値が４．０以上６．０以下である。内部傾斜組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの最大値が１００を超える。【選択図】 図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAGNETS</subject><subject>METALLURGY</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAP8fD0U3Dz9PFV8HV093MN8Q8OCfJ0DvEPUnD0c1HwdQ3x8HdRcANyfR39Qt0cnUNCgzz93BVCPFwVgh19XXkYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBkYGhiamxubmjMVGKANaEKs4</recordid><startdate>20200910</startdate><enddate>20200910</enddate><creator>KO KINTO</creator><scope>EVB</scope></search><sort><creationdate>20200910</creationdate><title>THIN FILM MAGNETOSTRICTOR AND METHOD FOR MANUFACTURING THE SAME</title><author>KO KINTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020145377A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAGNETS</topic><topic>METALLURGY</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>KO KINTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KO KINTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM MAGNETOSTRICTOR AND METHOD FOR MANUFACTURING THE SAME</title><date>2020-09-10</date><risdate>2020</risdate><abstract>To provide a thin film magnetostrictor having a high magnetic strain λs even if being applied to a thin film having a small thickness.SOLUTION: A thin film magnetostrictor has a thin film. The thin film contains Fe, Co, Tb and O primarily. The thin film has a surface-inclined composition film, an inside-uniform composition film, and an inside-inclined composition film. The inside-inclined composition film, the inside-uniform composition film and the surface-inclined composition film are located in this order from a substrate on which the thin film is formed toward an outermost surface of the thin film. The inside-uniform composition film is in contact with the inside-inclined composition film and the surface-inclined composition film. When the atomic number ratio calculated by (Co concentration+Fe concentration)/(Tb concentration) is represented by (Co,Fe)/Tb, the average value of (Co,Fe)/Tb in the inside-uniform composition film is 4.0 or more and 6.0 or less. The maximum of (Co,Fe)/Tb in the inside-inclined composition film is over 100.SELECTED DRAWING: Figure 2
【課題】 膜厚が小さい薄膜に適用する場合でも高い磁歪λｓを持つ薄膜磁歪素子を提供することを目的とする。【解決手段】 薄膜を有する薄膜磁歪素子である。薄膜はＦｅ，Ｃｏ，ＴｂおよびＯを主に含む。薄膜が表面傾斜組成膜と、内部均一組成膜と、内部傾斜組成膜と、を有する。薄膜が形成される基板から薄膜の最表面に向かって、内部傾斜組成膜、内部均一組成膜、表面傾斜組成膜の順番に位置する。内部均一組成膜は、内部傾斜組成膜および表面傾斜組成膜と接する。（Ｃｏ濃度＋Ｆｅ濃度）／（Ｔｂ濃度）で算出される原子数比を（Ｃｏ，Ｆｅ）／Ｔｂとして、内部均一組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの平均値が４．０以上６．０以下である。内部傾斜組成膜における（Ｃｏ，Ｆｅ）／Ｔｂの最大値が１００を超える。【選択図】 図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS |
| title | THIN FILM MAGNETOSTRICTOR AND METHOD FOR MANUFACTURING THE SAME |
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