CALIBRATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
To provide a semiconductor device and a calibration circuit.SOLUTION: A calibration circuit 200 includes a reference resistance leg 210, and an emphasis circuit 230. The reference resistance leg 210 is connected via a reference resistance node RRN to an external reference resistance RZQ, and is conf...
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| description | To provide a semiconductor device and a calibration circuit.SOLUTION: A calibration circuit 200 includes a reference resistance leg 210, and an emphasis circuit 230. The reference resistance leg 210 is connected via a reference resistance node RRN to an external reference resistance RZQ, and is configured to change a voltage level of the reference resistance node RRN on the basis of calibration codes NCAL1, PCAL1. The emphasis circuit 230 is configured to, when the reference resistance leg 210 changes the voltage level of the reference resistance node RRN on the basis of the calibration codes NCAL1, PCAL1, accelerate a change in the voltage level of the reference resistance node RRN.SELECTED DRAWING: Figure 2
【課題】本発明は、半導体装置及びキャリブレーション回路に関する。【解決手段】キャリブレーション回路２００は、基準抵抗レッグ２１０及びエンファシス回路２３０を含むことができる。基準抵抗レッグ２１０は、基準抵抗ノードＲＲＮを介して外部基準抵抗ＲＺＱと連結し、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗ノードＲＲＮの電圧レベルを変化させることができる。エンファシス回路２３０は、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗レッグ２１０が基準抵抗ノードＲＲＮの電圧レベルを変化させる時、基準抵抗ノードＲＲＮの電圧レベルの変化を加速化させることができる。【選択図】図２ |
| format | Patent |
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【課題】本発明は、半導体装置及びキャリブレーション回路に関する。【解決手段】キャリブレーション回路２００は、基準抵抗レッグ２１０及びエンファシス回路２３０を含むことができる。基準抵抗レッグ２１０は、基準抵抗ノードＲＲＮを介して外部基準抵抗ＲＺＱと連結し、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗ノードＲＲＮの電圧レベルを変化させることができる。エンファシス回路２３０は、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗レッグ２１０が基準抵抗ノードＲＲＮの電圧レベルを変化させる時、基準抵抗ノードＲＲＮの電圧レベルの変化を加速化させることができる。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRICITY ; PULSE TECHNIQUE ; TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHICCOMMUNICATION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200831&DB=EPODOC&CC=JP&NR=2020137110A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200831&DB=EPODOC&CC=JP&NR=2020137110A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AHN JUNG IL</creatorcontrib><title>CALIBRATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><description>To provide a semiconductor device and a calibration circuit.SOLUTION: A calibration circuit 200 includes a reference resistance leg 210, and an emphasis circuit 230. The reference resistance leg 210 is connected via a reference resistance node RRN to an external reference resistance RZQ, and is configured to change a voltage level of the reference resistance node RRN on the basis of calibration codes NCAL1, PCAL1. The emphasis circuit 230 is configured to, when the reference resistance leg 210 changes the voltage level of the reference resistance node RRN on the basis of the calibration codes NCAL1, PCAL1, accelerate a change in the voltage level of the reference resistance node RRN.SELECTED DRAWING: Figure 2
【課題】本発明は、半導体装置及びキャリブレーション回路に関する。【解決手段】キャリブレーション回路２００は、基準抵抗レッグ２１０及びエンファシス回路２３０を含むことができる。基準抵抗レッグ２１０は、基準抵抗ノードＲＲＮを介して外部基準抵抗ＲＺＱと連結し、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗ノードＲＲＮの電圧レベルを変化させることができる。エンファシス回路２３０は、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗レッグ２１０が基準抵抗ノードＲＲＮの電圧レベルを変化させる時、基準抵抗ノードＲＲＮの電圧レベルの変化を加速化させることができる。【選択図】図２</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><subject>TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHICCOMMUNICATION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB3dvTxdApyDPH091Nw9gxyDvUMUXD0c1EIdvX1dPb3cwl1DvEPUnBxDfN0dlXw9HP2CXXx9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkYGhsbmhoYGjsZEKQIAy2YqnQ</recordid><startdate>20200831</startdate><enddate>20200831</enddate><creator>AHN JUNG IL</creator><scope>EVB</scope></search><sort><creationdate>20200831</creationdate><title>CALIBRATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><author>AHN JUNG IL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020137110A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><topic>TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHICCOMMUNICATION</topic><toplevel>online_resources</toplevel><creatorcontrib>AHN JUNG IL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AHN JUNG IL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CALIBRATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><date>2020-08-31</date><risdate>2020</risdate><abstract>To provide a semiconductor device and a calibration circuit.SOLUTION: A calibration circuit 200 includes a reference resistance leg 210, and an emphasis circuit 230. The reference resistance leg 210 is connected via a reference resistance node RRN to an external reference resistance RZQ, and is configured to change a voltage level of the reference resistance node RRN on the basis of calibration codes NCAL1, PCAL1. The emphasis circuit 230 is configured to, when the reference resistance leg 210 changes the voltage level of the reference resistance node RRN on the basis of the calibration codes NCAL1, PCAL1, accelerate a change in the voltage level of the reference resistance node RRN.SELECTED DRAWING: Figure 2
【課題】本発明は、半導体装置及びキャリブレーション回路に関する。【解決手段】キャリブレーション回路２００は、基準抵抗レッグ２１０及びエンファシス回路２３０を含むことができる。基準抵抗レッグ２１０は、基準抵抗ノードＲＲＮを介して外部基準抵抗ＲＺＱと連結し、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗ノードＲＲＮの電圧レベルを変化させることができる。エンファシス回路２３０は、キャリブレーションコードＮＣＡＬ１，ＰＣＡＬ１に基づいて基準抵抗レッグ２１０が基準抵抗ノードＲＲＮの電圧レベルを変化させる時、基準抵抗ノードＲＲＮの電圧レベルの変化を加速化させることができる。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRONIC CIRCUITRY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY PULSE TECHNIQUE TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHICCOMMUNICATION |
| title | CALIBRATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
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