METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ETCHING GAS
To provide a method of manufacturing a semiconductor device capable of suitably etching a film and an etching gas.SOLUTION: The method of manufacturing a semiconductor device includes etching a film using an etching gas containing a chain hydrocarbon compound represented by CHF(C represents carbon,...
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| creator | SASAKI TOSHIYUKI ISHINO TAKAYA SHIMODA MITSUHARU SHIMIZU HISASHI |
| description | To provide a method of manufacturing a semiconductor device capable of suitably etching a film and an etching gas.SOLUTION: The method of manufacturing a semiconductor device includes etching a film using an etching gas containing a chain hydrocarbon compound represented by CHF(C represents carbon, H represents hydrogen, F represents fluorine, x represents an integer of 3 or more, and y and z each represent an integer of 1 or more). Further, each terminal carbon atom on a carbon chain of the CHFis bonded only to a fluorine atom out of a hydrogen atom and the fluorine atom.SELECTED DRAWING: Figure 1
【課題】膜を好適にエッチングすることが可能な半導体装置の製造方法およびエッチングガスを提供する。【解決手段】一の実施形態によれば、半導体装置の製造方法は、ＣｘＨｙＦｚ（Ｃは炭素、Ｈは水素、Ｆはフッ素を表し、ｘは３以上の整数を表し、かつ、ｙおよびｚはそれぞれ１以上の整数を表す）で示される鎖状炭化水素化合物を含むエッチングガスを用いて膜をエッチングすることを含む。さらに、前記ＣｘＨｙＦｚの炭素鎖上の各末端の炭素原子は、水素原子およびフッ素原子のうちのフッ素原子のみと結合している鎖状炭化水素化合物である。【選択図】図１ |
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【課題】膜を好適にエッチングすることが可能な半導体装置の製造方法およびエッチングガスを提供する。【解決手段】一の実施形態によれば、半導体装置の製造方法は、ＣｘＨｙＦｚ（Ｃは炭素、Ｈは水素、Ｆはフッ素を表し、ｘは３以上の整数を表し、かつ、ｙおよびｚはそれぞれ１以上の整数を表す）で示される鎖状炭化水素化合物を含むエッチングガスを用いて膜をエッチングすることを含む。さらに、前記ＣｘＨｙＦｚの炭素鎖上の各末端の炭素原子は、水素原子およびフッ素原子のうちのフッ素原子のみと結合している鎖状炭化水素化合物である。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200319&DB=EPODOC&CC=JP&NR=2020043239A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200319&DB=EPODOC&CC=JP&NR=2020043239A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SASAKI TOSHIYUKI</creatorcontrib><creatorcontrib>ISHINO TAKAYA</creatorcontrib><creatorcontrib>SHIMODA MITSUHARU</creatorcontrib><creatorcontrib>SHIMIZU HISASHI</creatorcontrib><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ETCHING GAS</title><description>To provide a method of manufacturing a semiconductor device capable of suitably etching a film and an etching gas.SOLUTION: The method of manufacturing a semiconductor device includes etching a film using an etching gas containing a chain hydrocarbon compound represented by CHF(C represents carbon, H represents hydrogen, F represents fluorine, x represents an integer of 3 or more, and y and z each represent an integer of 1 or more). Further, each terminal carbon atom on a carbon chain of the CHFis bonded only to a fluorine atom out of a hydrogen atom and the fluorine atom.SELECTED DRAWING: Figure 1
【課題】膜を好適にエッチングすることが可能な半導体装置の製造方法およびエッチングガスを提供する。【解決手段】一の実施形態によれば、半導体装置の製造方法は、ＣｘＨｙＦｚ（Ｃは炭素、Ｈは水素、Ｆはフッ素を表し、ｘは３以上の整数を表し、かつ、ｙおよびｚはそれぞれ１以上の整数を表す）で示される鎖状炭化水素化合物を含むエッチングガスを用いて膜をエッチングすることを含む。さらに、前記ＣｘＨｙＦｚの炭素鎖上の各末端の炭素原子は、水素原子およびフッ素原子のうちのフッ素原子のみと結合している鎖状炭化水素化合物である。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDxdQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNRcA1x9gApcHcM5mFgTUvMKU7lhdLcDEpuIGnd1IL8-NTigsTk1LzUknivACMDIwMDE2MjY0tHY6IUAQBMYSnS</recordid><startdate>20200319</startdate><enddate>20200319</enddate><creator>SASAKI TOSHIYUKI</creator><creator>ISHINO TAKAYA</creator><creator>SHIMODA MITSUHARU</creator><creator>SHIMIZU HISASHI</creator><scope>EVB</scope></search><sort><creationdate>20200319</creationdate><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ETCHING GAS</title><author>SASAKI TOSHIYUKI ; ISHINO TAKAYA ; SHIMODA MITSUHARU ; SHIMIZU HISASHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020043239A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SASAKI TOSHIYUKI</creatorcontrib><creatorcontrib>ISHINO TAKAYA</creatorcontrib><creatorcontrib>SHIMODA MITSUHARU</creatorcontrib><creatorcontrib>SHIMIZU HISASHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SASAKI TOSHIYUKI</au><au>ISHINO TAKAYA</au><au>SHIMODA MITSUHARU</au><au>SHIMIZU HISASHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ETCHING GAS</title><date>2020-03-19</date><risdate>2020</risdate><abstract>To provide a method of manufacturing a semiconductor device capable of suitably etching a film and an etching gas.SOLUTION: The method of manufacturing a semiconductor device includes etching a film using an etching gas containing a chain hydrocarbon compound represented by CHF(C represents carbon, H represents hydrogen, F represents fluorine, x represents an integer of 3 or more, and y and z each represent an integer of 1 or more). Further, each terminal carbon atom on a carbon chain of the CHFis bonded only to a fluorine atom out of a hydrogen atom and the fluorine atom.SELECTED DRAWING: Figure 1
【課題】膜を好適にエッチングすることが可能な半導体装置の製造方法およびエッチングガスを提供する。【解決手段】一の実施形態によれば、半導体装置の製造方法は、ＣｘＨｙＦｚ（Ｃは炭素、Ｈは水素、Ｆはフッ素を表し、ｘは３以上の整数を表し、かつ、ｙおよびｚはそれぞれ１以上の整数を表す）で示される鎖状炭化水素化合物を含むエッチングガスを用いて膜をエッチングすることを含む。さらに、前記ＣｘＨｙＦｚの炭素鎖上の各末端の炭素原子は、水素原子およびフッ素原子のうちのフッ素原子のみと結合している鎖状炭化水素化合物である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ETCHING GAS |
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