PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
To suppress a resist leaching defect from turning into a contamination source.SOLUTION: A pattern forming method of an embodiment including imprint processing includes the steps of: preparing a substrate in which an organic film is formed (preparing step); forming a surface layer film containing at...
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| creator | KOMUKAI TOSHIAKI |
| description | To suppress a resist leaching defect from turning into a contamination source.SOLUTION: A pattern forming method of an embodiment including imprint processing includes the steps of: preparing a substrate in which an organic film is formed (preparing step); forming a surface layer film containing at least metal or a semiconductor on a surface of the organic film (surface layer film forming step); forming an inorganic film on the surface layer film (inorganic film forming step); arranging an organic mask material on the inorganic film and forming a mask pattern by imprinting a template with a fine pattern on the organic mask material (mask pattern forming step); processing the inorganic film with the mask pattern as a mask (inorganic film processing step); and removing the mask pattern (mask pattern removing step).SELECTED DRAWING: Figure 4
【課題】レジストの浸み出し欠陥が汚染源となってしまうことを抑制すること。【解決手段】実施形態のパターン形成方法は、インプリント処理を含むパターン形成方法であって、有機膜が形成された基板を準備する準備ステップと、有機膜の表面に金属および半導体の少なくともいずれかを含む表層膜を形成する表層膜形成ステップと、表層膜上に無機膜を形成する無機膜材形成ステップと、無機膜上に有機系マスク材を配置し、微細パターンを有するテンプレートを有機系マスク材に押印してマスクパターンを形成するマスクパターン形成ステップと、マスクパターンをマスクに無機膜を加工する無機膜加工ステップと、マスクパターンを除去するマスクパターン除去ステップと、を含む。【選択図】図４ |
| format | Patent |
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【課題】レジストの浸み出し欠陥が汚染源となってしまうことを抑制すること。【解決手段】実施形態のパターン形成方法は、インプリント処理を含むパターン形成方法であって、有機膜が形成された基板を準備する準備ステップと、有機膜の表面に金属および半導体の少なくともいずれかを含む表層膜を形成する表層膜形成ステップと、表層膜上に無機膜を形成する無機膜材形成ステップと、無機膜上に有機系マスク材を配置し、微細パターンを有するテンプレートを有機系マスク材に押印してマスクパターンを形成するマスクパターン形成ステップと、マスクパターンをマスクに無機膜を加工する無機膜加工ステップと、マスクパターンを除去するマスクパターン除去ステップと、を含む。【選択図】図４</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING ; BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR ; SHAPING OR JOINING OF PLASTICS ; TRANSPORTING ; WORKING OF PLASTICS ; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200116&DB=EPODOC&CC=JP&NR=2020009869A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200116&DB=EPODOC&CC=JP&NR=2020009869A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOMUKAI TOSHIAKI</creatorcontrib><title>PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><description>To suppress a resist leaching defect from turning into a contamination source.SOLUTION: A pattern forming method of an embodiment including imprint processing includes the steps of: preparing a substrate in which an organic film is formed (preparing step); forming a surface layer film containing at least metal or a semiconductor on a surface of the organic film (surface layer film forming step); forming an inorganic film on the surface layer film (inorganic film forming step); arranging an organic mask material on the inorganic film and forming a mask pattern by imprinting a template with a fine pattern on the organic mask material (mask pattern forming step); processing the inorganic film with the mask pattern as a mask (inorganic film processing step); and removing the mask pattern (mask pattern removing step).SELECTED DRAWING: Figure 4
【課題】レジストの浸み出し欠陥が汚染源となってしまうことを抑制すること。【解決手段】実施形態のパターン形成方法は、インプリント処理を含むパターン形成方法であって、有機膜が形成された基板を準備する準備ステップと、有機膜の表面に金属および半導体の少なくともいずれかを含む表層膜を形成する表層膜形成ステップと、表層膜上に無機膜を形成する無機膜材形成ステップと、無機膜上に有機系マスク材を配置し、微細パターンを有するテンプレートを有機系マスク材に押印してマスクパターンを形成するマスクパターン形成ステップと、マスクパターンをマスクに無機膜を加工する無機膜加工ステップと、マスクパターンを除去するマスクパターン除去ステップと、を含む。【選択図】図４</description><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</subject><subject>SHAPING OR JOINING OF PLASTICS</subject><subject>TRANSPORTING</subject><subject>WORKING OF PLASTICS</subject><subject>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJcAwJcQ3yU3DzD_L19HNX8HUN8fB3UXD0c1EIdvX1dPb3cwl1DvEPUnBxDfN0dlXwdfQLdXN0DgkNQqjmYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkYGBgaWFmaWjsZEKQIAxv0sbw</recordid><startdate>20200116</startdate><enddate>20200116</enddate><creator>KOMUKAI TOSHIAKI</creator><scope>EVB</scope></search><sort><creationdate>20200116</creationdate><title>PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><author>KOMUKAI TOSHIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020009869A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</topic><topic>SHAPING OR JOINING OF PLASTICS</topic><topic>TRANSPORTING</topic><topic>WORKING OF PLASTICS</topic><topic>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KOMUKAI TOSHIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOMUKAI TOSHIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><date>2020-01-16</date><risdate>2020</risdate><abstract>To suppress a resist leaching defect from turning into a contamination source.SOLUTION: A pattern forming method of an embodiment including imprint processing includes the steps of: preparing a substrate in which an organic film is formed (preparing step); forming a surface layer film containing at least metal or a semiconductor on a surface of the organic film (surface layer film forming step); forming an inorganic film on the surface layer film (inorganic film forming step); arranging an organic mask material on the inorganic film and forming a mask pattern by imprinting a template with a fine pattern on the organic mask material (mask pattern forming step); processing the inorganic film with the mask pattern as a mask (inorganic film processing step); and removing the mask pattern (mask pattern removing step).SELECTED DRAWING: Figure 4
【課題】レジストの浸み出し欠陥が汚染源となってしまうことを抑制すること。【解決手段】実施形態のパターン形成方法は、インプリント処理を含むパターン形成方法であって、有機膜が形成された基板を準備する準備ステップと、有機膜の表面に金属および半導体の少なくともいずれかを含む表層膜を形成する表層膜形成ステップと、表層膜上に無機膜を形成する無機膜材形成ステップと、無機膜上に有機系マスク材を配置し、微細パターンを有するテンプレートを有機系マスク材に押印してマスクパターンを形成するマスクパターン形成ステップと、マスクパターンをマスクに無機膜を加工する無機膜加工ステップと、マスクパターンを除去するマスクパターン除去ステップと、を含む。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
| title | PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
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