THIN FILM ETCHANT COMPOSITION AND METAL PATTERN-FORMING METHOD BY UTILIZING THE SAME
To provide a thin film etchant composition which prevents re-adsorption of etched metal and enables the uniform etching of a thin film, and a metal pattern-forming method by utilizing the thin film etchant composition.SOLUTION: A thin film etchant composition comprises phosphoric acid (A) of 43-46 w...
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| creator | KIM JIN-SOOK NAM GIYONG SHIM KYUNGBO LEE BYUNGSU KIM HACCHEOL KIM SANGTAE LIM DAESUNG PARK YOUNGUL CHUNG JOOHWAN KIM DONGKI KIM CHANGSOO JUNG JUNGSEEK KIM JIN-HYOUNG JANG SANGHOON |
| description | To provide a thin film etchant composition which prevents re-adsorption of etched metal and enables the uniform etching of a thin film, and a metal pattern-forming method by utilizing the thin film etchant composition.SOLUTION: A thin film etchant composition comprises phosphoric acid (A) of 43-46 wt.% to a total weight of the composition, nitric acid (B) of 5-8 wt.%, acetic acid (C) of 10-17 wt.%, an iron nitrate (D) of 1-3 wt.%, and a phosphate (E) of 0.7-1.5 wt.% with the balance consisting of deionized water(F).SELECTED DRAWING: Figure 1
【課題】エッチングされた金属の再吸着を防止し、薄膜を均一にエッチングすることができるようにする薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法を提供する。【解決手段】組成物の総重量に対して、リン酸（Ａ）４３ないし４６重量％と、硝酸（Ｂ）５ないし８重量％と、酢酸（Ｃ）１０ないし１７重量％と、硝酸鉄（Ｄ）１ないし３重量％と、リン酸塩（Ｅ）０．７ないし１．５重量％と、脱イオン水（Ｆ）残量と、を含む薄膜エッチング液組成物である。【選択図】図１ |
| format | Patent |
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【課題】エッチングされた金属の再吸着を防止し、薄膜を均一にエッチングすることができるようにする薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法を提供する。【解決手段】組成物の総重量に対して、リン酸（Ａ）４３ないし４６重量％と、硝酸（Ｂ）５ないし８重量％と、酢酸（Ｃ）１０ないし１７重量％と、硝酸鉄（Ｄ）１ないし３重量％と、リン酸塩（Ｅ）０．７ないし１．５重量％と、脱イオン水（Ｆ）残量と、を含む薄膜エッチング液組成物である。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-LINEAR OPTICS ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191212&DB=EPODOC&CC=JP&NR=2019212897A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191212&DB=EPODOC&CC=JP&NR=2019212897A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM JIN-SOOK</creatorcontrib><creatorcontrib>NAM GIYONG</creatorcontrib><creatorcontrib>SHIM KYUNGBO</creatorcontrib><creatorcontrib>LEE BYUNGSU</creatorcontrib><creatorcontrib>KIM HACCHEOL</creatorcontrib><creatorcontrib>KIM SANGTAE</creatorcontrib><creatorcontrib>LIM DAESUNG</creatorcontrib><creatorcontrib>PARK YOUNGUL</creatorcontrib><creatorcontrib>CHUNG JOOHWAN</creatorcontrib><creatorcontrib>KIM DONGKI</creatorcontrib><creatorcontrib>KIM CHANGSOO</creatorcontrib><creatorcontrib>JUNG JUNGSEEK</creatorcontrib><creatorcontrib>KIM JIN-HYOUNG</creatorcontrib><creatorcontrib>JANG SANGHOON</creatorcontrib><title>THIN FILM ETCHANT COMPOSITION AND METAL PATTERN-FORMING METHOD BY UTILIZING THE SAME</title><description>To provide a thin film etchant composition which prevents re-adsorption of etched metal and enables the uniform etching of a thin film, and a metal pattern-forming method by utilizing the thin film etchant composition.SOLUTION: A thin film etchant composition comprises phosphoric acid (A) of 43-46 wt.% to a total weight of the composition, nitric acid (B) of 5-8 wt.%, acetic acid (C) of 10-17 wt.%, an iron nitrate (D) of 1-3 wt.%, and a phosphate (E) of 0.7-1.5 wt.% with the balance consisting of deionized water(F).SELECTED DRAWING: Figure 1
【課題】エッチングされた金属の再吸着を防止し、薄膜を均一にエッチングすることができるようにする薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法を提供する。【解決手段】組成物の総重量に対して、リン酸（Ａ）４３ないし４６重量％と、硝酸（Ｂ）５ないし８重量％と、酢酸（Ｃ）１０ないし１７重量％と、硝酸鉄（Ｄ）１ないし３重量％と、リン酸塩（Ｅ）０．７ないし１．５重量％と、脱イオン水（Ｆ）残量と、を含む薄膜エッチング液組成物である。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-LINEAR OPTICS</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAUALM4iPoPD_eCjYN2jG1iniQvoX0ddClF4iRaqP-PBPwAp4PjuKVgtkhg0HnQXFtFDHXwMXTIGAgUNeA1KwdRMeuWChNaj3TO1oYGTlfoGR3esmOroVNer8XiMT7ntPlxJbYm34s0vYc0T-M9vdJnuES5KytZymN1UPu_oi-L2zCc</recordid><startdate>20191212</startdate><enddate>20191212</enddate><creator>KIM JIN-SOOK</creator><creator>NAM GIYONG</creator><creator>SHIM KYUNGBO</creator><creator>LEE BYUNGSU</creator><creator>KIM HACCHEOL</creator><creator>KIM SANGTAE</creator><creator>LIM DAESUNG</creator><creator>PARK YOUNGUL</creator><creator>CHUNG JOOHWAN</creator><creator>KIM DONGKI</creator><creator>KIM CHANGSOO</creator><creator>JUNG JUNGSEEK</creator><creator>KIM JIN-HYOUNG</creator><creator>JANG SANGHOON</creator><scope>EVB</scope></search><sort><creationdate>20191212</creationdate><title>THIN FILM ETCHANT COMPOSITION AND METAL PATTERN-FORMING METHOD BY UTILIZING THE SAME</title><author>KIM JIN-SOOK ; NAM GIYONG ; SHIM KYUNGBO ; LEE BYUNGSU ; KIM HACCHEOL ; KIM SANGTAE ; LIM DAESUNG ; PARK YOUNGUL ; CHUNG JOOHWAN ; KIM DONGKI ; KIM CHANGSOO ; JUNG JUNGSEEK ; KIM JIN-HYOUNG ; JANG SANGHOON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019212897A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-LINEAR OPTICS</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM JIN-SOOK</creatorcontrib><creatorcontrib>NAM GIYONG</creatorcontrib><creatorcontrib>SHIM KYUNGBO</creatorcontrib><creatorcontrib>LEE BYUNGSU</creatorcontrib><creatorcontrib>KIM HACCHEOL</creatorcontrib><creatorcontrib>KIM SANGTAE</creatorcontrib><creatorcontrib>LIM DAESUNG</creatorcontrib><creatorcontrib>PARK YOUNGUL</creatorcontrib><creatorcontrib>CHUNG JOOHWAN</creatorcontrib><creatorcontrib>KIM DONGKI</creatorcontrib><creatorcontrib>KIM CHANGSOO</creatorcontrib><creatorcontrib>JUNG JUNGSEEK</creatorcontrib><creatorcontrib>KIM JIN-HYOUNG</creatorcontrib><creatorcontrib>JANG SANGHOON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM JIN-SOOK</au><au>NAM GIYONG</au><au>SHIM KYUNGBO</au><au>LEE BYUNGSU</au><au>KIM HACCHEOL</au><au>KIM SANGTAE</au><au>LIM DAESUNG</au><au>PARK YOUNGUL</au><au>CHUNG JOOHWAN</au><au>KIM DONGKI</au><au>KIM CHANGSOO</au><au>JUNG JUNGSEEK</au><au>KIM JIN-HYOUNG</au><au>JANG SANGHOON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM ETCHANT COMPOSITION AND METAL PATTERN-FORMING METHOD BY UTILIZING THE SAME</title><date>2019-12-12</date><risdate>2019</risdate><abstract>To provide a thin film etchant composition which prevents re-adsorption of etched metal and enables the uniform etching of a thin film, and a metal pattern-forming method by utilizing the thin film etchant composition.SOLUTION: A thin film etchant composition comprises phosphoric acid (A) of 43-46 wt.% to a total weight of the composition, nitric acid (B) of 5-8 wt.%, acetic acid (C) of 10-17 wt.%, an iron nitrate (D) of 1-3 wt.%, and a phosphate (E) of 0.7-1.5 wt.% with the balance consisting of deionized water(F).SELECTED DRAWING: Figure 1
【課題】エッチングされた金属の再吸着を防止し、薄膜を均一にエッチングすることができるようにする薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法を提供する。【解決手段】組成物の総重量に対して、リン酸（Ａ）４３ないし４６重量％と、硝酸（Ｂ）５ないし８重量％と、酢酸（Ｃ）１０ないし１７重量％と、硝酸鉄（Ｄ）１ないし３重量％と、リン酸塩（Ｅ）０．７ないし１．５重量％と、脱イオン水（Ｆ）残量と、を含む薄膜エッチング液組成物である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-LINEAR OPTICS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | THIN FILM ETCHANT COMPOSITION AND METAL PATTERN-FORMING METHOD BY UTILIZING THE SAME |
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